A device includes multiple ceramic capacitors and a current path structure. A first ceramic capacitor includes a first ceramic material between first and second electrodes. A second ceramic capacitor includes a second ceramic material between third and fourth electrodes. The second ceramic material has a higher Q than the first ceramic material. The current path structure includes a lateral conductor located between the first and second ceramic materials, and first and second vertical conductors that extend from first and second ends of the lateral conductor to a device surface. The device may be coupled to a substrate of a packaged RF amplifier device, which also includes a transistor. For example, the device may form a portion of an output impedance matching circuit coupled between a current carrying terminal of the transistor and an output lead of the RF amplifier device.

Circuits and methods for achieving good AM-AM and AM-PM metrics while achieving good power, PAE, linearity, and EVM performance in an amplifier. Embodiments provide an equalization approach which compensates for AM-AM and AM-PM variations in an amplifier by controlling bias voltage versus output power to alter the AM-AM and AM-PM profiles imposed by the amplifier. Differential amplifier embodiments include cross-coupled common-gate transistors that generate an equalization voltage that alters the gate bias voltage of respective main FETs in proportion to a power level present at the respective drains of the main FETs. Single-ended amplifier embodiments include an equalization circuit that alters the bias voltage to the gate of a main FET in proportion to a power level present at the main FET drain. Embodiments may also include a linearization circuit which alters the AM-PM profile of an input signal to compensate for the AM-PM profile imposed by a coupled amplifier.

Circuits and methods for achieving good AM-AM and AM-PM metrics while achieving good power, PAE, linearity, and EVM performance in an amplifier. Embodiments provide an equalization approach which compensates for AM-AM and AM-PM variations in an amplifier by controlling bias voltage versus output power to alter the AM-AM and AM-PM profiles imposed by the amplifier. Differential amplifier embodiments include cross-coupled common-gate transistors that generate an equalization voltage that alters the gate bias voltage of respective main FETs in proportion to a power level present at the respective drains of the main FETs. Single-ended amplifier embodiments include an equalization circuit that alters the bias voltage to the gate of a main FET in proportion to a power level present at the main FET drain. Embodiments may also include a linearization circuit which alters the AM-PM profile of an input signal to compensate for the AM-PM profile imposed by a coupled amplifier.

A wire (14) having a first end connected to a line (2) and a second end connected to a second end of a resistor (9) and having an inductive component La resonating with a parasitic capacitance Ca of the resistor (9), or a wire (16) having a first end connected to a line (3) and a second end connected to a second end of a resistor (12) and having an inductive component Lb resonating with a parasitic capacitance Cb of the resistor (12) are provided. Consequently, gain flatness in an operating frequency band can be improved.

A wire (14) having a first end connected to a line (2) and a second end connected to a second end of a resistor (9) and having an inductive component La resonating with a parasitic capacitance Ca of the resistor (9), or a wire (16) having a first end connected to a line (3) and a second end connected to a second end of a resistor (12) and having an inductive component Lb resonating with a parasitic capacitance Cb of the resistor (12) are provided. Consequently, gain flatness in an operating frequency band can be improved.

A circuit element is formed on a substrate made of a compound semiconductor. A bonding pad is disposed on the circuit element so as to at least partially overlap the circuit element. The bonding pad includes a first metal film and a second metal film formed on the first metal film. A metal material of the second metal film has a higher Young's modulus than a metal material of the first metal film.

A circuit element is formed on a substrate made of a compound semiconductor. A bonding pad is disposed on the circuit element so as to at least partially overlap the circuit element. The bonding pad includes a first metal film and a second metal film formed on the first metal film. A metal material of the second metal film has a higher Young's modulus than a metal material of the first metal film.

A touchscreen controller includes a set of transmitters for generating transmit signals applied to electrically-conductive transmit lines of a touchscreen panel, and a set of receivers configured to receive the signals via electrically-conductive receive lines that are capacitively coupled to the transmit lines. Each receiver includes an integrator to integrate the received current signal to generate an output voltage used for determining a location, if any, of a finger or object touching the panel. The integrator includes input and output amplification stages, and a feedback capacitor coupled between an input and output of the cascaded amplification stages. The capacitance of the feedback capacitor is configured so that the integrator achieves a desired rejection of a received jammer current signal. To reduce the size of the feedback capacitor, a bypass amplification stage is provided to steer away some of the input jammer current from the input of the integrator.

A touchscreen controller includes a set of transmitters for generating transmit signals applied to electrically-conductive transmit lines of a touchscreen panel, and a set of receivers configured to receive the signals via electrically-conductive receive lines that are capacitively coupled to the transmit lines. Each receiver includes an integrator to integrate the received current signal to generate an output voltage used for determining a location, if any, of a finger or object touching the panel. The integrator includes input and output amplification stages, and a feedback capacitor coupled between an input and output of the cascaded amplification stages. The capacitance of the feedback capacitor is configured so that the integrator achieves a desired rejection of a received jammer current signal. To reduce the size of the feedback capacitor, a bypass amplification stage is provided to steer away some of the input jammer current from the input of the integrator.

A differential power amplifier having first and second amplifiers with first and second signal output terminals along with bias circuitry in communication with the first and second amplifiers is disclosed. The differential amplifier further includes a first output clamp coupled to the first signal output terminal and a bias control terminal of the bias circuitry, wherein the first output clamp is configured to limit voltage at the first signal output terminal to a first predetermined voltage magnitude and lower bias current to the first amplifier in response to an overvoltage at the first signal output terminal. A second output clamp is coupled to the second signal output terminal and is configured to limit voltage at the second signal output terminal to a second predetermined voltage magnitude.