A bipolar transistor includes a collector layer, a base layer, and an emitter layer that are formed in this order on a compound semiconductor substrate. The emitter layer is disposed inside an edge of the base layer in plan view. A base electrode is disposed on partial regions of the emitter layer and the base layer so as to extend from an inside of the emitter layer to an outside of the base layer in plan view. An insulating film is disposed between the base electrode and a portion of the base layer, with the portion not overlapping the emitter layer. An alloy layer extends from the base electrode through the emitter layer in a thickness direction and reaches the base layer. The alloy layer contains at least one element constituting the base electrode and elements constituting the emitter layer and the base layer.

Some embodiments relate to a device, comprising an amplifier and a linearizer, the linearizer comprising a first transistor, the first transistor comprising a first terminal coupled to an input of the amplifier, a second terminal configured to be coupled to a DC supply voltage, and a control terminal configured to control a current flowing between the first and second terminals and configured to receive a DC bias voltage different from a voltage of the first terminal. Some embodiments relate to a device, comprising an amplifier, comprising an input, an output, and a first set of one or more transistors coupled between the input and the output, and a linearizer, comprising a second set of one or more transistors coupled between a DC supply voltage and the input of the amplifier, wherein the first set of transistors and the second set of transistors have a same topology.

Some embodiments relate to a device, comprising an amplifier and a linearizer, the linearizer comprising a first transistor, the first transistor comprising a first terminal coupled to an input of the amplifier, a second terminal configured to be coupled to a DC supply voltage, and a control terminal configured to control a current flowing between the first and second terminals and configured to receive a DC bias voltage different from a voltage of the first terminal. Some embodiments relate to a device, comprising an amplifier, comprising an input, an output, and a first set of one or more transistors coupled between the input and the output, and a linearizer, comprising a second set of one or more transistors coupled between a DC supply voltage and the input of the amplifier, wherein the first set of transistors and the second set of transistors have a same topology.

Envelope tracking can be employed to reduce power consumption of a power amplifier, but envelope tracking can introduce nonlinearities to a power amplifier. These nonlinearities can manifest themselves as noise at the output of the power amplifier. Embodiments described herein provide techniques for characterizing a parameter indicative of power amplifier noise when envelope tracking is employed. Measurement of this parameter can permit power amplifier designers to decide whether to forgo envelope tracking if a power amplifier is too susceptible to such noise, redesign the power amplifier to improve compatibility with envelope tracking, or to employ distortion compensation circuitry to reduce the noise output by the power amplifier. Counterintuitively, this distortion compensation circuitry may involve increasing the power, such as the envelope tracking power supply. However, increasing the power may be a desirable trade-off for increased linearity.

Envelope tracking can be employed to reduce power consumption of a power amplifier, but envelope tracking can introduce nonlinearities to a power amplifier. These nonlinearities can manifest themselves as noise at the output of the power amplifier. Embodiments described herein provide techniques for characterizing a parameter indicative of power amplifier noise when envelope tracking is employed. Measurement of this parameter can permit power amplifier designers to decide whether to forgo envelope tracking if a power amplifier is too susceptible to such noise, redesign the power amplifier to improve compatibility with envelope tracking, or to employ distortion compensation circuitry to reduce the noise output by the power amplifier. Counterintuitively, this distortion compensation circuitry may involve increasing the power, such as the envelope tracking power supply. However, increasing the power may be a desirable trade-off for increased linearity.

A Doherty amplifier module includes first and second amplifier die. The first amplifier die includes one or more first power transistors configured to amplify, along a first signal path, a first input RF signal to produce an amplified first RF signal. The second amplifier die includes one or more second power transistors configured to amplify, along a second signal path, a second input RF signal to produce an amplified second RF signal. A phase shift and impedance inversion element is coupled between the outputs of the first and second amplifier die. A shunt circuit is coupled to the output of either or both of the first and/or second amplifier die. The shunt circuit includes a series coupled inductance and high-Q capacitor (e.g., a metal-insulator-metal (MIM) capacitor), and the shunt circuit is configured to at least partially resonate out the output capacitance of the amplifier die to which it is connected.

A Doherty amplifier module includes first and second amplifier die. The first amplifier die includes one or more first power transistors configured to amplify, along a first signal path, a first input RF signal to produce an amplified first RF signal. The second amplifier die includes one or more second power transistors configured to amplify, along a second signal path, a second input RF signal to produce an amplified second RF signal. A phase shift and impedance inversion element is coupled between the outputs of the first and second amplifier die. A shunt circuit is coupled to the output of either or both of the first and/or second amplifier die. The shunt circuit includes a series coupled inductance and high-Q capacitor (e.g., a metal-insulator-metal (MIM) capacitor), and the shunt circuit is configured to at least partially resonate out the output capacitance of the amplifier die to which it is connected.

A power amplifier (20) for a transmitter circuit (10) is disclosed. The power amplifier (20) comprises at least one field-effect transistor (100, 100n, 100p) having a gate terminal (110, 110n, 110p) and a bulk terminal (120, 120n, 120p), wherein the at least one field-effect transistor (100, 100n, 100n) is configured to receive an input voltage at the gate terminal (110, 110p, 110n) and a dynamic bias voltage at the bulk terminal (120, 120n, 120p). Furthermore, the power amplifier (20) comprises a bias-voltage generation circuit (130). The input voltage is a linear function of an input signal. The bias-voltage generation circuit (130) is configured to generate the dynamic bias voltage as a nonlinear function of an envelope of the input signal.

A temperature compensation circuit comprises a temperature coefficient circuit that generates a temperature coefficient that is temperature dependent and a compensation circuit that generates a compensation signal based on an indication of temperature of an amplifier and the temperature coefficient, and based on the compensation signal, a gain of the amplifier is adjusted to improve amplifier linearity during data bursts.

A temperature compensation circuit comprises a temperature coefficient circuit that generates a temperature coefficient that is temperature dependent and a compensation circuit that generates a compensation signal based on an indication of temperature of an amplifier and the temperature coefficient, and based on the compensation signal, a gain of the amplifier is adjusted to improve amplifier linearity during data bursts.