Some embodiments relate to a device, comprising an amplifier and a linearizer, the linearizer comprising a first transistor, the first transistor comprising a first terminal coupled to an input of the amplifier, a second terminal configured to be coupled to a DC supply voltage, and a control terminal configured to control a current flowing between the first and second terminals and configured to receive a DC bias voltage different from a voltage of the first terminal. Some embodiments relate to a device, comprising an amplifier, comprising an input, an output, and a first set of one or more transistors coupled between the input and the output, and a linearizer, comprising a second set of one or more transistors coupled between a DC supply voltage and the input of the amplifier, wherein the first set of transistors and the second set of transistors have a same topology.

A microphone assembly comprising: a housing including a base, a cover, and a sound port; a MEMS transducer element disposed in the housing, the transducer element configured to convert sound into a microphone signal voltage at a transducer output; and a processing circuit. The processing circuit comprising a transconductance amplifier comprising an input node connected to the transducer output for receipt of the microphone signal voltage, the transconductance amplifier being configured to generate an amplified current signal representative of the microphone signal voltage in accordance with a predetermined transconductance of the transconductance amplifier; and an analog-to-digital converter comprising an input node connected to receive the amplified current signal, said analog-to-digital converter being configured to sample and quantize the amplified current signal to generate a corresponding digital microphone signal.

A microphone assembly comprising: a housing including a base, a cover, and a sound port; a MEMS transducer element disposed in the housing, the transducer element configured to convert sound into a microphone signal voltage at a transducer output; and a processing circuit. The processing circuit comprising a transconductance amplifier comprising an input node connected to the transducer output for receipt of the microphone signal voltage, the transconductance amplifier being configured to generate an amplified current signal representative of the microphone signal voltage in accordance with a predetermined transconductance of the transconductance amplifier; and an analog-to-digital converter comprising an input node connected to receive the amplified current signal, said analog-to-digital converter being configured to sample and quantize the amplified current signal to generate a corresponding digital microphone signal.

A Radio Frequency (RF) circuit including a receive path, a transmit path, a switching circuit, and an output configured to receive RF signals from an antenna in a receive mode of operation, and to provide RF signals to the antenna in a transmit mode of operation. The receive path is configured to be coupled between a low-noise amplifier and the output. The switching circuit is located in the receive path and is configured, in the receive mode, to selectively couple the low-noise amplifier to the output and to pass the received RF signals from the output to the low-noise amplifier. The transmit path is configured to be coupled between a power amplifier and the output, to provide, in the transmit mode, signals from the power amplifier to the output, bypassing the switching circuit, and to have, in receive mode of operation, an off-state impedance of at least 200+j*13 Ohm.

A Radio Frequency (RF) circuit including a receive path, a transmit path, a switching circuit, and an output configured to receive RF signals from an antenna in a receive mode of operation, and to provide RF signals to the antenna in a transmit mode of operation. The receive path is configured to be coupled between a low-noise amplifier and the output. The switching circuit is located in the receive path and is configured, in the receive mode, to selectively couple the low-noise amplifier to the output and to pass the received RF signals from the output to the low-noise amplifier. The transmit path is configured to be coupled between a power amplifier and the output, to provide, in the transmit mode, signals from the power amplifier to the output, bypassing the switching circuit, and to have, in receive mode of operation, an off-state impedance of at least 200+j*13 Ohm.

Integrated circuits, such as power amplifier integrated circuits, are disclosed containing compact-footprint, vertically-integrated capacitor-avalanche diode (AD) structures. In embodiments, the integrated circuit includes a semiconductor substrate, a metal layer system, and a vertically-integrated capacitor-AD structure. The metal layer system includes, in turn, a body of dielectric material in which a plurality of patterned metal layers are located. The vertically-integrated capacitor-AD structure includes a first AD formed, at least in part, by patterned portions of the first patterned metal layer. A first metal-insulator-metal (MIM) capacitor is also formed in the metal layer system and at least partially overlaps with the first AD, as taken along a vertical axis orthogonal to the principal surface of the semiconductor substrate. In certain instances, at least a majority, if not the entirety of the first AD vertically overlaps with the first MIM capacitor, by surface area, as taken along the vertical axis.

Integrated circuits, such as power amplifier integrated circuits, are disclosed containing compact-footprint, vertically-integrated capacitor-avalanche diode (AD) structures. In embodiments, the integrated circuit includes a semiconductor substrate, a metal layer system, and a vertically-integrated capacitor-AD structure. The metal layer system includes, in turn, a body of dielectric material in which a plurality of patterned metal layers are located. The vertically-integrated capacitor-AD structure includes a first AD formed, at least in part, by patterned portions of the first patterned metal layer. A first metal-insulator-metal (MIM) capacitor is also formed in the metal layer system and at least partially overlaps with the first AD, as taken along a vertical axis orthogonal to the principal surface of the semiconductor substrate. In certain instances, at least a majority, if not the entirety of the first AD vertically overlaps with the first MIM capacitor, by surface area, as taken along the vertical axis.

Bias arrangements for amplifiers are disclosed. An example bias arrangement for an amplifier includes a bias circuit, configured to produce a bias signal for the amplifier; a linearization circuit, configured to improve linearity of the amplifier by modifying the bias signal produced by the bias circuit to produce a modified bias signal to be provided to the amplifier; and a coupling circuit, configured to couple the bias circuit and the linearization circuit. Providing separate bias and linearization circuits coupled to one another by a coupling circuit allows separating a linearization operation from a biasing loop to overcome some drawbacks of prior art bias arrangements that utilize a single biasing loop.

An amplifier includes an amplifier circuit configured to include a transistor that amplifies a signal, an insulating film provided over the amplifier circuit, an input pad provided over the insulating film and coupled to the transistor through a wiring in the insulating film, an output pad provided over the insulating film and coupled to the transistor through the wiring in the insulating film, and a metal layer provided over the insulating film to be grounded, and configured to include an opening that extends in a second direction intersecting with a first direction in a plane direction, the signal propagating from the input pad to the output pad in the first direction, and the opening being at a position overlapping the transistor.

An amplifier includes an amplifier circuit configured to include a transistor that amplifies a signal, an insulating film provided over the amplifier circuit, an input pad provided over the insulating film and coupled to the transistor through a wiring in the insulating film, an output pad provided over the insulating film and coupled to the transistor through the wiring in the insulating film, and a metal layer provided over the insulating film to be grounded, and configured to include an opening that extends in a second direction intersecting with a first direction in a plane direction, the signal propagating from the input pad to the output pad in the first direction, and the opening being at a position overlapping the transistor.