Thermal temperature sensors for power amplifiers are provided herein. In certain implementations, a semiconductor die includes a compound semiconductor substrate, and a power amplifier including a plurality of field-effect transistors (FETs) configured to amplify a radio frequency (RF) signal. The plurality of FETs are arranged on the compound semiconductor substrate as a transistor array. The semiconductor die further includes a semiconductor resistor configured to generate a signal indicative of a temperature of the transistor array. The semiconductor resistor is located adjacent to one end of the transistor array.

Thermal temperature sensors for power amplifiers are provided herein. In certain implementations, a semiconductor die includes a compound semiconductor substrate, and a power amplifier including a plurality of field-effect transistors (FETs) configured to amplify a radio frequency (RF) signal. The plurality of FETs are arranged on the compound semiconductor substrate as a transistor array. The semiconductor die further includes a semiconductor resistor configured to generate a signal indicative of a temperature of the transistor array. The semiconductor resistor is located adjacent to one end of the transistor array.

Solder bumps are placed in direct contact with the silicon substrate of an amplifier integrated circuit having a flip chip configuration. A plurality of amplifier transistor arrays generate waste heat that promotes thermal run away of the amplifier if not directed out of the integrated circuit. The waste heat flows through the thermally conductive silicon substrate and out the solder bump to a heat-sinking plane of an interposer connected to the amplifier integrated circuit via the solder bumps.

Solder bumps are placed in direct contact with the silicon substrate of an amplifier integrated circuit having a flip chip configuration. A plurality of amplifier transistor arrays generate waste heat that promotes thermal run away of the amplifier if not directed out of the integrated circuit. The waste heat flows through the thermally conductive silicon substrate and out the solder bump to a heat-sinking plane of an interposer connected to the amplifier integrated circuit via the solder bumps.

Systems and methods are disclosed herein for selectively compensating for a specific Intermodulation Distortion (IMO) product(s) of an arbitrary order in a transmitter system. In some embodiments, a method of compensating for one or more specific IMO products in a concurrent multi-band transmitter system comprises generating an IMO correction signal for a specific IMO product as a function of two or more frequency band input signals for two or more frequency bands of a concurrent multi-band signal, the IMO product being an arbitrary order IMD product. The method further comprises frequency translating the IMD correction signal to a desired frequency that corresponds to a Radio Frequency (RF) location of the specific IMO product and, after frequency translating the IMO correction signal to the desired frequency, utilizing the IMO correction signal to compensate for the specific IMO product.

Systems and methods are disclosed herein for selectively compensating for a specific Intermodulation Distortion (IMO) product(s) of an arbitrary order in a transmitter system. In some embodiments, a method of compensating for one or more specific IMO products in a concurrent multi-band transmitter system comprises generating an IMO correction signal for a specific IMO product as a function of two or more frequency band input signals for two or more frequency bands of a concurrent multi-band signal, the IMO product being an arbitrary order IMD product. The method further comprises frequency translating the IMD correction signal to a desired frequency that corresponds to a Radio Frequency (RF) location of the specific IMO product and, after frequency translating the IMO correction signal to the desired frequency, utilizing the IMO correction signal to compensate for the specific IMO product.

A circuit element is formed on a substrate made of a compound semiconductor. A bonding pad is disposed on the circuit element so as to at least partially overlap the circuit element. The bonding pad includes a first metal film and a second metal film formed on the first metal film. A metal material of the second metal film has a higher Young's modulus than a metal material of the first metal film.

A circuit element is formed on a substrate made of a compound semiconductor. A bonding pad is disposed on the circuit element so as to at least partially overlap the circuit element. The bonding pad includes a first metal film and a second metal film formed on the first metal film. A metal material of the second metal film has a higher Young's modulus than a metal material of the first metal film.

A high-frequency module (1) includes a first substrate (101), a second substrate (102) that faces the first substrate (101), a support (103) that supports the first substrate (101) and the second substrate (102), and a plurality of high-frequency circuit components arranged in internal space formed by the first substrate (101), the second substrate (102), and the support and on both of facing principal faces of the first substrate (101) and the second substrate (102), and the plurality of high-frequency circuit components include a power amplifier element that constitutes a power amplifier circuit (16).

A high-frequency module (1) includes a first substrate (101), a second substrate (102) that faces the first substrate (101), a support (103) that supports the first substrate (101) and the second substrate (102), and a plurality of high-frequency circuit components arranged in internal space formed by the first substrate (101), the second substrate (102), and the support and on both of facing principal faces of the first substrate (101) and the second substrate (102), and the plurality of high-frequency circuit components include a power amplifier element that constitutes a power amplifier circuit (16).