Bias networks for amplifiers are disclosed. An example bias network includes an adaptive bias circuit, configured to generate a bias signal for an amplifier, and further includes a coupling circuit, configured to couple the adaptive bias circuit to the amplifier. The coupling circuit is made adaptive in that its' impedance depends on a power level of an input signal to be amplified by the amplifier. By configuring the coupling circuit to have a variable impedance that depends on the power level of the input signal, the coupling circuit may adapt to the input power level and, thereby, may modify the bias signal to reduce/optimize at least some of the nonlinearity that may be introduced to the bias signal by the adaptive bias circuit.

A multiple-stage amplifier includes a driver stage die and a final stage die. The driver stage die includes a first type of semiconductor substrate (e.g., a silicon substrate), a first transistor, and an integrated portion of an interstage impedance matching circuit. A control terminal of the first transistor is electrically coupled to an RF signal input terminal of the driver stage die, and the integrated portion of the interstage impedance matching circuit is electrically coupled between a current-carrying terminal of the first transistor and an RF signal output terminal of the driver stage die. The second die includes a III-V semiconductor substrate (e.g., a GaN substrate) and a second transistor. A connection, which is a non-integrated portion of the interstage impedance matching circuit, is electrically coupled between the RF signal output terminal of the driver stage die and an RF signal input terminal of the final stage die.

A multiple-stage amplifier includes a driver stage die and a final stage die. The driver stage die includes a first type of semiconductor substrate (e.g., a silicon substrate), a first transistor, and an integrated portion of an interstage impedance matching circuit. A control terminal of the first transistor is electrically coupled to an RF signal input terminal of the driver stage die, and the integrated portion of the interstage impedance matching circuit is electrically coupled between a current-carrying terminal of the first transistor and an RF signal output terminal of the driver stage die. The second die includes a III-V semiconductor substrate (e.g., a GaN substrate) and a second transistor. A connection, which is a non-integrated portion of the interstage impedance matching circuit, is electrically coupled between the RF signal output terminal of the driver stage die and an RF signal input terminal of the final stage die.

A power amplifier arrangement comprises a power amplifier comprising at least one transistor having a first gate and a second gate. The first gate is configured to receive a radio frequency input signal superimposed with a first control signal, and the second gate is configured to receive a second control signal. The first control signal is a linearization signal varying in relation to an envelope of the input signal and the second control signal is a temperature compensation signal varying in relation to a temperature of the power amplifier, or vice versa.

Embodiments relate to sensing a current provided by a power supply circuit. The current sensing circuit includes a sense transistor for sensing the current provided by a main transistor, a driver for controlling a bias provided to the sense transistor and the main transistor, and a sense resistor for converting the sensed current to a voltage value. Moreover, the current sensing circuit includes a controller that modifies at least one of: (a) a resistance of the main transistor by adjusting the bias voltage provided by the driver, (b) a gain ratio between a load current and a sensing current by adjusting a number of individual devices that are active in the sense transistor, and (c) a resistance of the sense resistor.

An amplification device having a cascode structure includes an amplification circuit including a first transistor and a second transistor, cascode-connected to each other and receiving an operating voltage to amplify an input signal; a first bias circuit generating a first bias voltage and supplying the first bias voltage to the first transistor; and a second bias circuit generating a second bias voltage based on a control voltage and the operating voltage and supplying the second bias voltage to the second transistor.

An amplification device having a cascode structure includes an amplification circuit including a first transistor and a second transistor, cascode-connected to each other and receiving an operating voltage to amplify an input signal; a first bias circuit generating a first bias voltage and supplying the first bias voltage to the first transistor; and a second bias circuit generating a second bias voltage based on a control voltage and the operating voltage and supplying the second bias voltage to the second transistor.

Apparatus and methods for an improved-efficiency Doherty amplifier are described. The Doherty amplifier may include a two-stage peaking amplifier that transitions from an off state to an on state later and more rapidly than a single-stage peaking amplifier used in a conventional Doherty amplifier. The improved Doherty amplifier may operate at higher gain values than a conventional Doherty amplifier, with no appreciable reduction in signal bandwidth.

An envelope tracking (ET) amplifier apparatus is provided. The ET amplifier apparatus includes an ET integrated circuit (ETIC) having a number of voltage circuits coupled to a common port and configured to generate an ET voltage(s) based on a number of ET target voltages, respectively. In examples discussed herein, a selected voltage circuit(s) in the ETIC receives a maximum ET target voltage among all the ET target voltages and is configured to generate a reference ET voltage based on the maximum ET target voltage. As such, another voltage circuit(s), which happens to receive the maximum ET target voltage, may simply treat the reference ET voltage as a respective ET voltage(s) instead of generating the respective ET voltage(s). As a result, it may be possible to opportunistically turn off or reduce functionality of the voltage circuit(s) to help reduce peak battery current and improve heat dissipation in the ET amplifier apparatus.

An envelope tracking (ET) amplifier apparatus is provided. The ET amplifier apparatus includes an ET integrated circuit (ETIC) having a number of voltage circuits coupled to a common port and configured to generate an ET voltage(s) based on a number of ET target voltages, respectively. In examples discussed herein, a selected voltage circuit(s) in the ETIC receives a maximum ET target voltage among all the ET target voltages and is configured to generate a reference ET voltage based on the maximum ET target voltage. As such, another voltage circuit(s), which happens to receive the maximum ET target voltage, may simply treat the reference ET voltage as a respective ET voltage(s) instead of generating the respective ET voltage(s). As a result, it may be possible to opportunistically turn off or reduce functionality of the voltage circuit(s) to help reduce peak battery current and improve heat dissipation in the ET amplifier apparatus.