A self-oscillating class D amplifier includes an integration circuit configured to integrate an input signal and output a result of the integration as an integrated signal, a comparator configured to receive the integrated signal at an inverting input terminal and output a pulse width modulation signal by comparing voltages of a non-inverting input terminal being grounded and the inverting input terminal, a switching circuit configured to power-amplify the pulse width modulation signal output from the comparator, a low-pass filter configured to extract an amplified output signal from the power-amplified pulse width modulation signal, a first feedback circuit configured to feed back the output signal of the low-pass filter to the inverting input terminal of the comparator, and a second feedback circuit configured to feed back the output signal of the low-pass filter to the integration circuit.

A switching amplifier includes a power device and a processing device. The power device is configured for powering a load and is comprised of a plurality of switches. The processing device configured to calculate a switch junction temperature for a bonding wire in each switch based at least in part on a power loss of each switch; generate a first accumulated fatigue damage of the bonding wire in each switch based on the switch junction temperature; and generate an estimated remaining lifetime of the switching amplifier based on the first accumulated fatigue damages of the bonding wires in each switch.

The present invention relates in a first aspect to a regulated high side gate driver circuit for power transistors. The regulated high side gate driver circuit comprises a gate driver powered by a floating voltage regulator which comprises a linear regulating device.

Disclosed is a charge pump protection device including a power supply voltage, a charge pump to produce an output voltage higher than the power supply voltage, the charge pump including, a pumping capacitor to store voltage during a charging state and to discharge the voltage during a pumping state thereof, a plurality of switches to regulate the charging and pumping states, a charge pump capacitor to store the output voltage, and at least one current limiter in series with at least one of the plurality of switches to limit current and prevent an electrical failure of the charge pump.

Transistors may be manufactured with a shared drain to reduce die area consumed by circuitry. In one example, two transistors can be manufactured that include two body regions that abut a shared drain region. The two transistors can be independently operated by coupling terminals to a source and a gate for each transistor and the shared drain. Characteristics of the two transistors can be controlled by adjusting feature sizes, such as overlap between the gate and the shared drain for a transistor. In particular, two transistors with different voltage requirements can be manufactured using a shared drain structure, which can be useful in amplifier circuitry and in particular Class-D amplifiers.

A self-oscillating amplifier system is disclosed. The system comprises a pulse modulator, a switching power amplification stage and a demodulation filter. Moreover, the system comprises a compensator including a forward filter which is a high order filter including a second order pole pair and a second order zero pair. Hereby it is possible to decrease the phase turn at low frequencies for better stability and increasing the gain of the control loop within the desired bandwidth.

A self-oscillating amplifier system is disclosed. The system comprises a pulse modulator, a switching power amplification stage and a demodulation filter. Moreover, the system comprises a compensator including a forward filter which is a high order filter including a second order pole pair and a second order zero pair. Hereby it is possible to decrease the phase turn at low frequencies for better stability and increasing the gain of the control loop within the desired bandwidth.

A method is used for operating a switching amplifier, the switching amplifier includes a plurality of cascade elements. The method includes: coupling the cascade elements in series between two terminals of a load; providing two leg circuits each comprised of switches in each of the cascade elements; and controlling all of the switches comprised in the switching amplifier using space vector modulation (SVM), such that a change of a common mode (CM) voltage generated by the switching amplifier is in a predetermined range.

A method is used for operating a switching amplifier, the switching amplifier includes a plurality of cascade elements. The method includes: coupling the cascade elements in series between two terminals of a load; providing two leg circuits each comprised of switches in each of the cascade elements; and controlling all of the switches comprised in the switching amplifier using space vector modulation (SVM), such that a change of a common mode (CM) voltage generated by the switching amplifier is in a predetermined range.

A boost DC-DC power converter comprising a semiconductor switch arrangement comprising a plurality of series connected semiconductor switches. A first capacitor is connected between a first intermediate node of a first leg of the semiconductor switch arrangement and a second intermediate node of a second leg of the semiconductor switch arrangement. A control circuit is coupled to respective control terminals of the plurality of semiconductor switches. A load sensor is configured to detect a load current and/or a load voltage of a load circuit connectable to at least a first DC output voltage of the DC-DC power converter. The control circuit being further configured to adjusting one or more operational parameters of the boost DC-DC power converter based on the detected load current and/or load voltage.