The present application provides a resonator and a preparation method for a resonator, and relates to the technical field of semiconductors. The method involves introducing a first single crystal substrate to facilitate the epitaxial growth of a high-quality single crystal piezoelectric layer on the first single crystal substrate, and firstly performing ion implantation on the first single crystal substrate to form a damaged layer at a certain depth within it. Therefore, while the first single crystal substrate is removed, it is firstly possible to adopt the heating process, and after the first single crystal substrate is subjected to high-temperature treatment, a first layer and a second layer are split at the damaged layer, thereby a part of the first single crystal substrate is firstly removed, and then the remaining part of the first single crystal substrate is removed by trimming, etching, and other modes. By cooperation of two removing modes, the rapid removal of the first single crystal substrate is achieved, and the difficulty of removing the first single crystal substrate is effectively reduced.

An acoustic wave device includes a support, a piezoelectric layer including a first principal surface adjacent to the support and a second principal surface, a first IDT electrode on the first principal surface and including first and second electrode fingers, and a second IDT electrode on the second principal surface not overlapping the first IDT electrode in plan view and including first and second electrode fingers. When d is a thickness of piezoelectric layer and p is a center-to-center distance between adjacent ones of the electrode fingers, d/p is about 0.5 or less in the first and second IDT electrodes. An insulating film is provided on the second principal surface overlapping the first IDT electrode in plan view, and a wiring electrode extending along the insulating film overlapping the first IDT electrode in plan view, the wiring electrode being connected to the second IDT electrode.

Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. A top acoustic reflector including a first pair of top metal electrode layers may be electrically and acoustically coupled with the first layer of piezoelectric material to excite the piezoelectrically excitable main resonance mode at a resonant frequency.

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity.

The present invention provides a technique for making a film bulk acoustic resonator with ease, at low cost. A film bulk acoustic resonator, according to one aspect of the present disclosure has: a substrate having a first main surface; an oxide film provided over the first main surface; and a laminated film provided over the oxide film and including a first electrode, a piezoelectric layer, and a second electrode laminated in this order, and, in this film bulk acoustic resonator, a void where the oxide film is removed is provided between the substrate and the first electrode, and the piezoelectric layer has a through-hole that communicates with the void.

A bulk acoustic wave resonator is provided. The bulk acoustic wave resonator incudes a carrier substrate, having a main surface extending along a first direction; a piezoelectric layer, located on a side of the carrier substrate in a second direction perpendicular to the main surface of the carrier substrate; a first electrode and a second electrode; a cavity boundary structure, having a body part extending along the first direction and a protruding part protruding from the body part toward the piezoelectric layer; a resonant cavity, defined by the cavity boundary structure and the piezoelectric layer; and a periphery dielectric layer, located on a side of the protruding part of the cavity boundary structure away from the resonant cavity, a material of the periphery dielectric layer is different from a material of at least a portion of the protruding part adjacent to the periphery dielectric layer.

A bulk acoustic wave resonator includes a substrate, a support layer disposed on the substrate, the support layer including a cavity having a polygon shape with more than three sides in a plane crossing a first direction from the substrate to the support layer, a piezoelectric layer disposed on the support layer, a bottom electrode disposed below the piezoelectric layer, partially overlapping the cavity, and extending across a first side of the cavity, and a top electrode disposed above the piezoelectric layer, partially overlapping the cavity, and extending across a second side of the cavity. The bulk acoustic wave resonator further includes at least one release hole formed in the piezoelectric layer and overlapping a portion of the cavity.

A bulk acoustic wave (BAW) resonator includes a solidly mounted reflector, for example, a Bragg-type reflector, a piezoelectric layer, and first and second electrodes on first and second surfaces, respectively, of the piezoelectric layer. A filter device or filter system includes at least one BAW resonator. Related methods of fabrication include forming the BAW resonator.

An acoustic resonator forms a component of an FBAR filter that includes a trap-rich layer to avoid parasitic conduction by degrading carrier lifetimes of a free charge carriers. The acoustic resonator has a first electrode, a second electrode disposed parallel to the first planar portion and a piezoelectric layer disposed between and contacting both the first and second planar electrodes. A silicon-based a support layer is bonded to the second electrode and includes a trap region. The acoustic resonator may be manufactured by (a) depositing the trap region on the support layer; (b) oxidizing a surface of the trap region; (c) depositing a bonding layer on the oxidized surface of the trap region; (d) bonding a first electrode to the bonding layer; (e) contacting a first side of a piezoelectric layer to the electrode; and (f) contacting a second side of the piezoelectric layer a second electrode.

A method of manufacturing an integrated circuit. This method includes forming an epitaxial material comprising single crystal piezo material overlying a surface region of a substrate to a desired thickness and forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material. Also, the method includes forming a topside landing pad metal and a first electrode member overlying a portion of the epitaxial material and a second electrode member overlying the topside landing pad metal. Furthermore, the method can include processing the backside of the substrate to form a backside trench region exposing a backside of the epitaxial material and the landing pad metal and forming a backside resonator metal material overlying the backside of the epitaxial material to couple to the second electrode member overlying the topside landing pad metal.