The present application provides a resonator and a preparation method for a resonator, and relates to the technical field of semiconductors. The method involves introducing a first single crystal substrate to facilitate the epitaxial growth of a high-quality single crystal piezoelectric layer on the first single crystal substrate, and firstly performing ion implantation on the first single crystal substrate to form a damaged layer at a certain depth within it. Therefore, while the first single crystal substrate is removed, it is firstly possible to adopt the heating process, and after the first single crystal substrate is subjected to high-temperature treatment, a first layer and a second layer are split at the damaged layer, thereby a part of the first single crystal substrate is firstly removed, and then the remaining part of the first single crystal substrate is removed by trimming, etching, and other modes. By cooperation of two removing modes, the rapid removal of the first single crystal substrate is achieved, and the difficulty of removing the first single crystal substrate is effectively reduced.

Acoustic filters, resonators and methods of making acoustic filters are disclosed. An acoustic resonator device includes a substrate. A back surface of a piezoelectric plate is attached to the substrate, a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. A conductor pattern is formed on the front surface of the piezoelectric plate, the conductor pattern including an interdigital transducer (IDTs) with interleaved fingers of the IDT disposed on the diaphragm. A ratio of the mark of the interleaved fingers to the pitch of the interleaved fingers is greater than or equal to 0.2 and less than or equal to 0.3.

Lateral field excitation acoustic resonators and methods of manufacture are disclosed. In one aspect, an acoustically resonating material such as a piezoelectric film or membrane is spaced from a substrate by electrodes having an air gap therebetween. When current flows through the electrodes, lateral field acoustic waves are excited in the resonating material with relatively good coupling and adequate heat dissipation.

Acoustic resonator devices, filters, and methods are disclosed. An acoustic resonator includes a substrate, a lithium niobate plate having front and back surfaces, wherein Euler angles of the lithium niobate plate are [0°, β, 0° ], where β is greater than or equal to 0° and less than or equal to 60°, and an acoustic Bragg reflector between the surface of the substrate and the back surface of the lithium niobate plate. An interdigital transducer (IDT) is formed on the front surface of the piezoelectric plate. At least one finger of the IDT is disposed in a groove in the lithium niobate plate.

Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate having a surface. A back surface of a single-crystal piezoelectric plate is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) is formed on a front surface of the piezoelectric plate with interleaved IDT fingers of the IDT disposed on the diaphragm. Back-side fingers are formed the back surface of the diaphragm.

A filter device is provided that includes a substrate, a piezoelectric plate attached to the substrate; interdigital transducers (IDTs) of a plurality of resonators, respectively, that each have interleaved fingers at respective diaphragms of the one piezoelectric plate disposed over one or more cavities; and a dielectric layer over at least one surface of the respective diaphragms. For at least two resonators, the dielectric layer has a thickness distribution that includes a first thickness layer and a second thickness layer over the first thickness layer, and the second thickness layer of a first resonator of the at least two resonators has a coverage distribution over the first thickness layer that is different than a coverage distribution of a second resonator of the at least two resonators.

A bulk acoustic wave resonator includes a substrate, a support layer disposed on the substrate, the support layer including a cavity having a polygon shape with more than three sides in a plane crossing a first direction from the substrate to the support layer, a piezoelectric layer disposed on the support layer, a bottom electrode disposed below the piezoelectric layer, partially overlapping the cavity, and extending across a first side of the cavity, and a top electrode disposed above the piezoelectric layer, partially overlapping the cavity, and extending across a second side of the cavity. The bulk acoustic wave resonator further includes at least one release hole formed in the piezoelectric layer and overlapping a portion of the cavity.

A piezoelectric thin film (PTF) is located above a carrier substrate. The PTF may be Z-cut LiNbO.sub.3 thin film adapted to propagate an acoustic wave in at least one of a first mode excited by an electric field oriented in a longitudinal direction along a length of the PTF or a second mode excited by the electric field oriented at least partially in a thickness direction of the PTF. A first interdigitated transducer (IDT) is disposed on a first end of the PTF. The first IDT is to convert a first electromagnetic signal, traveling in the longitudinal direction, into the acoustic wave. A second IDT is disposed on a second end of the PTF with a gap between the second IDT and the first IDT. The second IDT is to convert the acoustic wave into a second electromagnetic signal, and the gap determines a time delay of the acoustic wave.

An acoustic resonator forms a component of an FBAR filter that includes a trap-rich layer to avoid parasitic conduction by degrading carrier lifetimes of a free charge carriers. The acoustic resonator has a first electrode, a second electrode disposed parallel to the first planar portion and a piezoelectric layer disposed between and contacting both the first and second planar electrodes. A silicon-based a support layer is bonded to the second electrode and includes a trap region. The acoustic resonator may be manufactured by (a) depositing the trap region on the support layer; (b) oxidizing a surface of the trap region; (c) depositing a bonding layer on the oxidized surface of the trap region; (d) bonding a first electrode to the bonding layer; (e) contacting a first side of a piezoelectric layer to the electrode; and (f) contacting a second side of the piezoelectric layer a second electrode.

A film bulk acoustic wave resonator (FBAR) is disclosed with raised and recessed frame portions formed in a top electrode. The FBAR can include a substrate, a piezoelectric film supported to oscillate in a direction opposite to a main surface of the substrate, and a pair of top and bottom electrodes formed respectively on top and bottom surfaces of the film. The recessed frame portion and the raised frame portion can be formed to extend adjacent to each other along a periphery of an active region of the film oscillating during an operation of the film on a top surface of the top electrode.