An acoustic resonator package includes a substrate, an acoustic resonator disposed on the substrate, the acoustic resonator including a first hydrophobic layer, a cap configured to accommodate the acoustic resonator, a bonding portion configured to bond the substrate to the cap, and a second hydrophobic layer disposed on the substrate at a position between the acoustic resonator and the bonding portion.

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

A method of fabricating an acoustic wave device includes: forming a piezoelectric thin film resonator and a second lower electrode on a substrate, the piezoelectric thin film resonator having a resonance region in which a first lower electrode and a first upper electrode face each other across a piezoelectric film, the piezoelectric film and the first upper electrode are not formed on the second lower electrode outside the resonance region; forming a first dielectric film in the resonance region and a second dielectric film on the second lower electrode outside the resonance region at a same time, the first dielectric film and the second dielectric film being made of a material different from a material of the piezoelectric film; and forming a second upper electrode on the second dielectric film, the second upper electrode facing the second lower electrode.

Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate and a piezoelectric plate having parallel front and back surfaces, the back surface attached to the substrate. An interdigital transducer (IDT) is formed on the front surface of the piezoelectric plate such that interleaved fingers of the IDT are disposed on a portion of the piezoelectric plate suspended over a cavity formed in the substrate.

A method of manufacturing a bulk acoustic wave resonator includes: forming a sacrificial layer on a substrate protection layer; forming a membrane layer on the substrate protection layer to cover the sacrificial layer; and forming a cavity by removing the sacrificial layer using a gas mixture comprising a halide-based gas and an oxygen-containing gas, wherein a mixture ratio of the halide-based gas to the oxygen-containing gas in the gas mixture is in a range from 1.5 to 2.4.

A vibrator element includes: a plate-shaped vibrating substrate including a first surface and a second surface, which are in a front and back relationship, and including a vibrating portion and a support portion that supports the vibrating portion and has a thickness smaller than that of the vibrating portion; an electrode including a first excitation electrode disposed at the first surface at the vibrating portion, a second excitation electrode disposed at the second surface at the vibrating portion, a first pad electrode disposed at the support portion and electrically coupled to the first excitation electrode, and a second pad electrode disposed at the support portion and electrically coupled to the second excitation electrode; a first metal film disposed at an upper layer on the first pad electrode and having a thickness larger than that of the first pad electrode; and a second metal film disposed at an upper layer on the second pad electrode and having a thickness larger than that of the second pad electrode.

Filter devices and methods are disclosed. A single-crystal piezoelectric plate is attached to substrate, portions of the piezoelectric plate forming a plurality of diaphragms spanning respective cavities in the substrate. A conductor pattern formed on the piezoelectric plate defines a low band filter including low band shunt resonators and low band series resonators and a high band filter including high band shunt resonators and high band series resonators. Interleaved fingers of interdigital transducers (IDTs) of the low band shunt resonators are disposed on respective diaphragms having a first thickness, interleaved fingers of IDTs of the high band series resonators are disposed on respective diaphragms having a second thickness less than the first thickness, and interleaved fingers of IDTs of the low band series resonators and the high band shunt resonators are disposed on respective diaphragms having thicknesses intermediate the first thickness and the second thickness.

A method of fabricating an acoustic wave resonator includes forming a dielectric layer on an upper surface of a substrate, forming a lower electrode on an upper surface of the dielectric layer, forming a layer of piezoelectric material on an upper surface of the lower electrode, forming a dielectric material layer via in the dielectric layer subsequent to forming the lower electrode and the layer of piezoelectric material, and forming a conductive through substrate via passing through the substrate and the dielectric material layer via and contacting a lower surface of the lower electrode.

A vibrator element includes: a plate-shaped vibrating substrate including a first surface and a second surface, which are in a front and back relationship, and including a vibrating portion, a support portion, and a coupling portion that couples the vibrating portion to the support portion and includes a portion having a thickness smaller than that of the support portion; an electrode layer including a first excitation electrode disposed at the first surface at the vibrating portion, a second excitation electrode disposed at the second surface at the vibrating portion, a first pad electrode disposed at the support portion, a second pad electrode disposed at the support portion, a first coupling electrode disposed at the coupling portion and coupling the first excitation electrode to the first pad electrode, and a second coupling electrode disposed at the coupling portion and coupling the second excitation electrode to the second pad electrode; a first metal film disposed at an upper layer on the first coupling electrode that is located on the coupling portion and having a thickness larger than that of the electrode layer; and a second metal film disposed at an upper layer on the second coupling electrode that is located on the coupling portion and having a thickness larger than that of the electrode layer.

A germanium-containing aluminum nitride piezoelectric film and a method for manufacturing an aluminum nitride piezoelectric film in which a germanium-containing aluminum nitride piezoelectric film is grown on a substrate by sputtering.