Aluminum nitride piezoelectric thin film, piezoelectric material, piezoelectric component, and method for manufacturing aluminum nitride piezoelectric thin film

Abstract

A germanium-containing aluminum nitride piezoelectric film and a method for manufacturing an aluminum nitride piezoelectric film in which a germanium-containing aluminum nitride piezoelectric film is grown on a substrate by sputtering.

Claims

1. A piezoelectric film containing aluminum nitride and germanium, wherein a polarization direction of the piezoelectric film is a nitrogen polarity, and the polarization direction is a direction opposite to a film growing direction.

2. The piezoelectric film according to claim 1, wherein a concentration of the germanium is in a range of 3 to 28 at % when a total concentration of the germanium and aluminum is 100 at %.

3. The piezoelectric film according to claim 2, wherein the concentration of the germanium is in a range of 4 to 21 at %.

4. The piezoelectric film according to claim 3, wherein the concentration of the germanium is in a range of 5 to 16 at %.

5. A piezoelectric component comprising: a substrate; and a piezoelectric film according to claim 1 on the substrate.

6. The piezoelectric component according to claim 5, wherein the substrate contains Si.

7. The piezoelectric component according to claim 5, further comprising an electrode on the piezoelectric film.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a diagram showing the relationship between the concentration of germanium in an aluminum nitride piezoelectric thin film and the piezoelectric constant d.sub.33.

(2) FIG. 2 is a schematic configuration view of an apparatus used for a method for manufacturing a Ge-containing aluminum nitride piezoelectric thin film according to the first embodiment of the present invention.

(3) FIG. 3 is a schematic front view showing a piezoelectric component including an aluminum nitride piezoelectric thin film in which the polarization direction is aluminum polarity (Al-polarity).

(4) FIG. 4 is a schematic front view showing a piezoelectric component according to an embodiment of the piezoelectric component of the present invention.

(5) FIG. 5 is a diagram showing the relationship between the power supply to a germanium target and the atomic concentration of each element.

(6) FIG. 6 is a schematic configuration view of an apparatus used for a method for manufacturing a Ge-containing aluminum nitride piezoelectric thin film according to the second embodiment of the present invention.

(7) FIG. 7 is a partially cut-away front sectional view showing a structural example of the piezoelectric component of the present invention.

(8) FIG. 8 is a front sectional view showing another structural example of the piezoelectric component of the present invention.

DESCRIPTION OF PREFERRED EMBODIMENTS OF THE INVENTION

(9) Hereinafter, the present invention is made clear by describing specific embodiments of the present invention with reference to the drawings.

(10) FIG. 4 is a schematic front view of a piezoelectric component obtained in the first embodiment of the present invention. A piezoelectric component 1 includes a substrate 2 containing Si. A Ge-containing aluminum nitride piezoelectric thin film 3 is formed on the substrate 2. The Ge-containing aluminum nitride piezoelectric thin film 3 is formed by a sputtering method as described below. The polarization direction of the Ge-containing aluminum nitride piezoelectric thin film 3 is the arrow Z direction shown in the drawing. Specifically, the polarization direction is nitrogen polarity (N-polarity) having a direction opposite to a thin film growing direction.

(11) On the Ge-containing aluminum nitride piezoelectric thin film 3, an electrode 4 is formed. Although particularly not used here, at least one electrode in addition to the electrode 4 is provided for applying a voltage on the Ge-containing aluminum nitride piezoelectric thin film. Alternatively, the substrate 2 containing a semiconductor silicon may be used as one of the electrodes and the electrode 4 may be used as the other electrode.

(12) The substrate 2 is also used as a substrate for forming the Ge-containing aluminum nitride piezoelectric thin film 3 by sputtering. Accordingly, the substrate 2 can be formed of any appropriate material. In the present embodiment, the substrate 2 contains low-resistance Si and also acts as an electrode. The substrate 2 may also contain a semiconductor other than Si. The substrate 2 may be formed of an insulator, a metal or an organic resin film. When the substrate 2 is formed of a high-resistance material, an electrode thin film may be formed between the Ge-containing aluminum nitride piezoelectric thin film 3 and the substrate 2.

(13) The electrode 4 contains any appropriate metal such as Ag, Al, Cu, Mo, W, Ta, Pt, Ru, Rh and Ir, or contains an alloy.

(14) As described above, the polarization direction of the Ge-containing aluminum nitride piezoelectric thin film 3 is nitrogen polarity (N-polarity) in the piezoelectric component 1 of the present embodiment.

(15) Generally, when an aluminum nitride thin film is formed by sputtering, the polarization direction becomes a Z direction as in an aluminum nitride piezoelectric thin film 103 in a piezoelectric component 101 shown in FIG. 3. Specifically, the polarization direction is the same direction as the thin film growing direction. That is, the polarization direction is aluminum polarity (Al-polarity).

(16) The present inventors have found that, by containing germanium when an aluminum nitride piezoelectric thin film is formed by a sputtering method, a piezoelectric thin film in which the polarization direction is inverted can be obtained. As described below, such a piezoelectric thin film in which the polarization direction is inverted can easily be used in a laminate of a plurality of piezoelectric thin films having different polarization directions.

(17) An embodiment of a specific method for manufacturing the Ge-containing aluminum nitride piezoelectric thin film 3 is described below.

(18) FIG. 2 is a schematic configuration view of an apparatus used for a method for manufacturing a Ge-containing aluminum nitride piezoelectric thin film according to the first embodiment of the present invention. A manufacturing apparatus 21 is a sputtering apparatus. The manufacturing apparatus 21 includes a chamber 22. In the chamber 22, a heating device 24 is disposed. On the lower surface of the heating device 24, a substrate 12 is attached.

(19) High frequency power supplies 25 and 26 are provided below the substrate 12. On the high frequency power supply 25, an Al target 27 is provided. On the high frequency power supply 26, a Ge target 28 is provided.

(20) High frequency power can be applied to the Al target 27 and the Ge target 28 from the high frequency power supplies 25 and 26, respectively.

(21) In the meantime, a mixed gas of an Ar gas and a N.sub.2 gas is supplied from the outside to the chamber 22 via a valve 29.

(22) Below the substrate 12, directly above the Al target 27, and directly above the Ge target 28, shutters 31 to 33 are disposed, respectively.

(23) By using the manufacturing apparatus 21, a Ge-containing aluminum nitride piezoelectric thin film can be formed on the substrate 12 by sputtering. More specifically, the substrate 12 is heated by the heating device 24, and high frequency power, with the heating state being kept, is applied to the Al target 27 and the Ge target 28 from the high frequency power supplies 25 and 26 while an Ar and N.sub.2 mixed gas is supplied. Thereby, a Ge-containing aluminum nitride piezoelectric thin film can be formed on the substrate 12.

(24) The heating temperature of the substrate 12 is not particularly limited, but may be non-heating to about 500 C. The heating temperature is more preferably 200 to 450 C.

(25) The mixing ratio between Ar and N.sub.2 depends on the target composition of the Ge-containing aluminum nitride piezoelectric thin film, but may be about 2:8 to 8:2 in the flow ratio. Preferably, the Ar:N.sub.2 flow ratio is more desired to be in the range of 7:3 to 5:5. Thereby, an even more excellent piezoelectric property can be exhibited.

(26) The gas pressure is not particularly limited, but may be about 0.1 Pa to 0.5 Pa. As an example of the present embodiment, a Ge-containing aluminum nitride piezoelectric thin film of Example 1 was formed under the following conditions.

(27) Substrate temperature=400 C.

(28) Ar:N.sub.2 flow ratio=7:3

(29) Gas pressure=0.18 Pa

(30) Target composition: Ge.sub.0.1Al.sub.0.9N

(31) A Ge-containing aluminum nitride piezoelectric thin film of Example 1 was obtained under the conditions described above. The piezoelectric constant d.sub.33 was 5.8 pC/N. That is, the piezoelectric constant d.sub.33 is a negative value, from which it is understood that a Ge-containing aluminum nitride piezoelectric thin film in which the polarization direction was inverted was obtained.

(32) A Ge-containing aluminum nitride piezoelectric thin film was obtained in the same manner as in Example 1, while the power supply to the Ge target was varied. The results are shown in FIG. 5.

(33) As is clear from FIG. 5, it is understood that when the power supply to the Ge target is varied from 5 W to 15 W, the atomic concentration of Ge increases while the atomic concentration of Al decreases, along with the increasing power supply to the Ge target. On the other hand, the concentration of N is understood to be constant. Accordingly, it is understood that the composition varies in such a manner as that part of Al is replaced by Ge.

(34) As described above, it is understood that the atomic concentration of Ge can be adjusted by varying the power supply to the Ge target.

(35) The atomic concentrations of Al, Ge and N described above were obtained by RBS or NRA.

(36) The RBS is Rutherford backscattering spectrometry (RBS). In the RBS, a sample is irradiated with high speed ions. Part of the incident ions is subjected to Rutherford scattering (elastic scattering) by nuclei in the sample. The energy of the scattered ions differs according to the mass and the position of a target atom. From the energy and the yield of the scattered ions, the elemental composition in the depth direction of the sample can be obtained.

(37) On the other hand, in the NRA, or the nuclear reaction analysis, irradiation with high speed ions causes a nuclear reaction with a light element in the sample. By detecting the -ray or the -ray generated by the nuclear reaction, quantitative determination of the light element can be conducted.

(38) For measurement of each atomic concentration in FIG. 5, the concentrations of Ge, Al, and Si were obtained by the RBS in which high speed H ions were used. In addition, the content concentration of N was measured by the NRA in which high speed H ions were used.

(39) The present inventors prepared various Ge-containing aluminum nitride piezoelectric thin films in the same manner as in Example 1 described above, while varying the Ge concentration. FIG. 1 is a diagram showing the relationship between the Ge concentration and the piezoelectric constant d.sub.33.

(40) As is clear from FIG. 1, in the case of an aluminum nitride piezoelectric thin film having a Ge concentration of 0, that is containing no Ge, the piezoelectric constant d.sub.33 is about 7 pC/N, a positive value.

(41) It is understood that when Ge is contained, the piezoelectric constant d.sub.33 rapidly shifts to a minus value. As is understood from FIG. 1, when the Ge concentration is in the range of 3 at % to 28 at %, the piezoelectric constant d.sub.33 is a negative value. That is, as shown in FIG. 4, it is understood that the Ge-containing aluminum nitride piezoelectric thin film 3 in which the polarization direction is opposite to the thin film growing direction can be obtained. Accordingly, the Ge concentration is preferably in the range of 3 to 28 at %. In addition, as is understood from FIG. 1, when the Ge concentration is in the range of 4 to 21 at %, the absolute value of the piezoelectric constant d.sub.33 is larger than 2 pC/N, and thus the piezoelectric property can be effectively enhanced. More preferably, it is understood that when the Ge concentration is in the range of 5 to 16 at %, the piezoelectric property can be more effectively enhanced.

(42) It is understood from the RBS/NRA that when Ge is contained, Al is replaced by Ge. It is also understood from the document (R. D. Shannon, Acta Crystallogr., A32 (1976) 751.) that trivalent tetracoordinate Al and tetravalent tetracoordinate Ge both have an ionic radius of 0.39 angstroms and are similar to each other, and thus they are easily replaced by each other.

(43) It was found from the first-principles calculation that Ge tends to stably take a tetravalent tetracoordinate structure and takes a stable structure when the charge compensation in that case is carried out by an Al defect with a piezoelectric constant and a crystal structure that are very similar to those obtained experimentally being able to obtained.

(44) From these experimental data and logical analysis, it was found that such a method as Ge doping that stably affords Al deficiency is effective for forming an aluminum nitride thin film having N-polarity.

(45) In the first embodiment described above, the Al target 27 and the Ge target 28 were used as shown in FIG. 2, but a GeAl alloy target 42 may be used as in the second embodiment shown in FIG. 6. In a manufacturing apparatus 41 shown in FIG. 6, a high frequency power supply 44 is disposed in a chamber 43. On the high frequency power supply 44, the GeAl alloy target 42 is placed.

(46) In the chamber 43, heating devices 45 and 46 and a shutter 47 are disposed. Above the shutter 47, substrates 12 and 12 are disposed. The chamber 43 is configured to be supplied thereto with an Ar and N.sub.2 mixed gas via a valve 48 outside the chamber 43.

(47) As in the present embodiment, a single target of the GeAl alloy target may be used as a target. Alternatively, Ge pellets may be placed on an Al target, or an Al target may be holed to have Ge pellets embedded therein. In such a configuration, it is possible to easily and uniformly form a Ge-containing aluminum nitride piezoelectric thin film on a large size wafer such as a 6- or 8-inch size wafer. Accordingly, a Ge-containing aluminum nitride piezoelectric thin film having a relatively large area can be easily provided.

(48) Also in the second embodiment, by setting the Ge concentration in the above specific range as described above, a Ge-containing aluminum nitride piezoelectric thin film in which the polarization direction is inverted can be provided similarly to the manufacturing method in the first embodiment.

(49) In the manufacturing method of Patent Document 1 described above, it is difficult to supply a small amount of oxygen with a high degree of accuracy. In contrast, as is clear from the first and second embodiments, such a troublesome step as the supply of a small amount of a gas is not necessary in the method for manufacturing an aluminum nitride piezoelectric thin film of the present invention. Accordingly, a Ge-containing aluminum nitride piezoelectric thin film in which the polarization direction is inverted can be easily mass-produced.

(50) FIG. 7 is a partially cut-away front sectional view showing a structural example of a piezoelectric component suitably including the Ge-containing aluminum nitride piezoelectric thin film of the present invention. A piezoelectric thin film filter 51 includes a base plate 52. The base plate 52 is provided with a hollow 52a. Above the hollow 52a, a support film 53, a first piezoelectric thin film 54, and a second piezoelectric thin film 55 are laminated in this order. Under the lower surface of the first piezoelectric thin film 54, a lower electrode 56 is disposed. Above the second piezoelectric thin film 55, an upper electrode 57 is provided. Between the first piezoelectric thin film 54 and the second piezoelectric thin film 55, an electrode 58 is provided. The polarization direction of the first piezoelectric thin film 54 is the arrow Z direction, while the polarization direction of the second piezoelectric thin film 55 is the arrow Z direction. When such a piezoelectric thin film filter 51 is obtained, the Ge-containing aluminum nitride piezoelectric thin film described above can be suitably used as the second piezoelectric thin film 55.

(51) As the first piezoelectric thin film 54, an aluminum nitride piezoelectric thin film containing no Ge may be formed by sputtering. Accordingly, the first and second piezoelectric thin films 54 and 55 having different polarization directions can be easily formed.

(52) FIG. 8 is a front sectional view showing another structural example of a piezoelectric component suitably including the Ge-containing aluminum nitride piezoelectric thin film of the present invention. An acoustic element 61 shown in FIG. 8 includes a case 62. The case 62 has an aperture opening downward. The aperture opening downward is closed by abase plate 63. On the upper surface of the case 62, a plurality of sound emission holes 62a is provided.

(53) In the case 62, a laminated piezoelectric element 70 is installed through support parts 64 and 65. The laminated piezoelectric element 70 has a first laminated part including an electrode 71, a vibration film 72, a piezoelectric layer 73, and an electrode 74 laminated in this order from the top, and has a second laminated part that is disposed under the first laminated part and includes an electrode 75, a piezoelectric layer 76, a vibration film 77, and an electrode 78 laminated in this order from the top. The polarization direction of the piezoelectric layer 73 and the polarization direction of the piezoelectric layer 76 are opposite to each other in the thickness direction. Such an acoustic element 61 can be easily prepared by using a Ge-containing aluminum nitride piezoelectric thin film of the present invention and an aluminum nitride piezoelectric thin film in which the polarization direction is the thin film growing direction as the piezoelectric layers 73 and 76.

(54) The present invention is not limited to the structural examples shown in FIGS. 7 and 8, but can be widely used for various piezoelectric components having piezoelectric thin films with polarization directions opposing, such as piezoelectric vibrators, piezoelectric resonators, piezoelectric actuators, and piezoelectric sensors.

DESCRIPTION OF REFERENCE SYMBOLS

(55) 1,101 . . . Piezoelectric component

(56) 2 . . . Substrate

(57) 3 . . . Ge-containing aluminum nitride piezoelectric thin film

(58) 4 . . . Electrode

(59) 12 . . . Substrate

(60) 21 . . . Manufacturing apparatus

(61) 22 . . . Chamber

(62) 24 . . . Heating device

(63) 25,26 . . . High frequency power supply

(64) 27 . . . Al target

(65) 28 . . . Ge target

(66) 29 . . . Valve

(67) 3133 . . . Shutter

(68) 41 . . . Manufacturing apparatus

(69) 42 . . . GeAl alloy target

(70) 43 . . . Chamber

(71) 44 . . . High frequency power supply

(72) 45,46 . . . Heating device

(73) 47 . . . Shutter

(74) 48 . . . Valve

(75) 51 . . . Piezoelectric thin film filter

(76) 52 . . . Base plate

(77) 52a . . . Hollow

(78) 53 . . . Support film

(79) 54,55 . . . First and second piezoelectric thin films

(80) 56 . . . Lower electrode

(81) 57 . . . Upper electrode

(82) 58 . . . Electrode

(83) 61 . . . Acoustic element

(84) 62 . . . Case

(85) 62a . . . Sound emission hole

(86) 63 . . . Base plate

(87) 64,65 . . . Support part

(88) 70 . . . Laminated piezoelectric element

(89) 71 . . . Electrode

(90) 72,77 . . . Vibration film

(91) 73,76 . . . Piezoelectric layer

(92) 74,75,78 . . . Electrode

(93) 103 . . . Aluminum nitride piezoelectric thin film