A microelectromechanical system (MEMS) resonator includes a degenerately-doped single-crystal silicon layer and a piezoelectric material layer disposed on the degenerately-doped single-crystal silicon layer. An electrically-conductive material layer is disposed on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer, and patterned to form first and second electrodes.

Embodiments of the invention include microelectronic devices, resonators, and methods of fabricating the microelectronic devices. In one embodiment, a microelectronic device includes a substrate and a plurality of cavities integrated with the substrate. A plurality of vertically oriented resonators are formed with each resonator being positioned in a cavity. Each resonator includes a crystalline or single crystal piezoelectric film.

A microelectromechanical resonator device has: a main body, with a first surface and a second surface, opposite to one another along a vertical axis, and made of a first layer and a second layer, arranged on the first layer; a cap, having a respective first surface and a respective second surface, opposite to one another along the vertical axis, and coupled to the main body by bonding elements; and a piezoelectric resonator structure formed by: a mobile element, constituted by a resonator portion of the first layer, suspended in cantilever fashion with respect to an internal cavity provided in the second layer and moreover, on the opposite side, with respect to a housing cavity provided in the cap; a region of piezoelectric material, arranged on the mobile element on the first surface of the main body; and a top electrode, arranged on the region of piezoelectric material, the mobile element constituting a bottom electrode of the piezoelectric resonator structure.

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

Disclosed are devices and methods for semiconductor devices including a ceramic substrate. Aspects disclosed include semiconductor device including an electrical component, an alumina ceramic substrate and a substrate-film. The substrate-film is deposited on the alumina ceramic substrate. The substrate-film has a planar substrate-film surface opposite the alumina ceramic substrate. The electrical component is formed on the substrate-film surface of the substrate-film on the alumina ceramic substrate.

A suspended device structure comprises a substrate, a cavity disposed in a surface of the substrate, and a device suspended entirely over a bottom of the cavity. The device is a piezoelectric device and is suspended at least by a tether that physically connects the device to the substrate. The tether has a non-linear centerline. A wafer can comprise a plurality of suspended device structures.

A piezoelectric film that includes crystalline AlN; at least one first element partially replacing Al in the crystalline AlN; and a second element doping the crystalline AlN and which has an ionic radius smaller than that of the first element and larger than that of Al.

A microelectromechanical resonator device has: a main body, with a first surface and a second surface, opposite to one another along a vertical axis, and made of a first layer and a second layer, arranged on the first layer; a cap, having a respective first surface and a respective second surface, opposite to one another along the vertical axis, and coupled to the main body by bonding elements; and a piezoelectric resonator structure formed by: a mobile element, constituted by a resonator portion of the first layer, suspended in cantilever fashion with respect to an internal cavity provided in the second layer and moreover, on the opposite side, with respect to a housing cavity provided in the cap; a region of piezoelectric material, arranged on the mobile element on the first surface of the main body; and a top electrode, arranged on the region of piezoelectric material, the mobile element constituting a bottom electrode of the piezoelectric resonator structure.

The present disclosure provides a super-regenerative transceiver with a feedback element having a controllable gain. The super-regenerative transceiver utilizes the controllable gain to improve RF signal data sensitivity and improve RF signal data capture rates. Super-regenerative transceivers described herein permit signal data capture over a broad range of frequencies and for a range of communication protocols. Super-regenerative transceivers described herein are tunable, consume very little power for operation and maintenance, and permit long term operation even when powered by very small power sources (e.g., coin batteries).

A method for adjusting a resonant frequency of a resonator without impairing piezoelectricity that includes preparing a lower lid; arranging a substrate with a lower surface that faces the lower lid and forming a first electrode layer, a piezoelectric film, and a second electrode layer on an upper surface of the substrate. Moreover, a vibration arm is formed that bends and vibrates from the first electrode layer, the second electrode layer, and the piezoelectric film and an upper lid faces the lower lid with the resonator interposed therebetween. The method further includes adjusting a frequency of the resonator before or after arranging the upper lid by exciting the vibration arm by applying a voltage between the first electrode layer and the second electrode layer and by causing a part of the vibration arm to collide with either or both of the lower lid and the upper lid.