A suspended device structure comprises a substrate, a cavity disposed in a surface of the substrate, and a device suspended entirely over a bottom of the cavity. The device is a piezoelectric device and is suspended at least by a tether that physically connects the device to the substrate. The tether has a non-linear centerline. A wafer can comprise a plurality of suspended device structures.

An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

The present disclosure provides a super-regenerative transceiver with a feedback element having a controllable gain. The super-regenerative transceiver utilizes the controllable gain to improve RF signal data sensitivity and improve RF signal data capture rates. Super-regenerative transceivers described herein permit signal data capture over a broad range of frequencies and for a range of communication protocols. Super-regenerative transceivers described herein are tunable, consume very little power for operation and maintenance, and permit long term operation even when powered by very small power sources (e.g., coin batteries).

A microelectromechanical system (MEMS) resonator includes a degenerately-doped single-crystal silicon layer and a piezoelectric material layer disposed on the degenerately-doped single-crystal silicon layer. An electrically-conductive material layer is disposed on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer, and patterned to form first and second electrodes.

A BAW resonator/filter with a monolithic TFE package that defines an acoustic BC and suppresses resonances from the low-Q piezoelectric area of the resonator and resulting devices are provided. Embodiments include a BAW resonator over a dielectric layer, the BAW resonator including a first metal layer, a thin-film piezoelectric layer, and a second metal layer; a first cavity in the dielectric layer under the first metal layer and a second cavity over the first cavity on the second metal layer; and a pair of TFE anchors on the second metal layer, each TFE anchor adjacent to and on an opposite side of the second cavity and extending beyond the first metal layer.

The present disclosure provides a frequency-converting super-regenerative transceiver with a frequency mixer coupled to a resonator and a feedback element having a controllable gain. The frequency-converting super-regenerative transceiver utilizes the frequency mixer to shift the incoming frequencies, based on a controlled oscillator, to match the frequency of operation of the super-regenerative transceiver. The frequency-converting super-regenerative transceivers described herein permit signal data capture over a broad range of frequencies and for a range of communication protocols. The frequency-converting super-regenerative transceivers described herein are tunable, consume very little power for operation and maintenance, and permit long term operation even when powered by very small power sources (e.g., coin batteries).

The present disclosure relates to a MEMS vibrator or the like that has excellent chemical resistance and an excellent mechanical strength and that is easily thinned. The present disclosure is a MEMS vibrator comprising: a vibrating film including a graphite film; and a silicon member supporting the vibrating film, the graphite film having a thickness of 50 nm or more and less than 20 m, and the graphite film having a Young's modulus along a graphite film plane direction of 700 GPa or more.

There are disclosed various apparatuses and methods for tuning a resonance frequency. In some embodiments there is provided an apparatus (200) comprising at least one input electrode (202, 204) for receiving radio frequency signals; a graphene foil (210) for converting at least part of the radio frequency signals into mechanical energy; at least one dielectric support element (212) to support the graphene foil (210) and to space apart the at least one input electrode (202, 204) and the graphene foil (210). The graphene foil (210) has piezoelectric properties. In some embodiments there is provided a method comprising receiving radio frequency signals by at least one input electrode (202, 204) of an apparatus (200); providing a bias voltage to the apparatus (200) for tuning the resonance frequency of the apparatus (200); and converting at least part of the radio frequency signals into mechanical energy by a graphene foil (210) having piezoelectric properties.

A bulk acoustic wave MEMS resonator device includes at least one functionalization (e.g., specific binding or non-specific binding) material arranged over a top side electrode, with at least one patterned enhanced surface area element arranged between a lower surface of the top side electrode and the functionalization material. The at least one patterned enhanced surface area element increases non-planarity of the at least one functionalization material, thereby providing a three-dimensional structure configured to increase sensor surface area and reduce analyte diffusion distance, and may also promote fluid mixing. Methods for biological and chemical sensing, and methods for forming MEMS resonator devices and fluidic devices are further disclosed.

A method of fabricating an FBAR filter device including an array of resonators, each resonator comprising a single crystal piezoelectric film sandwiched between a first metal electrode and a second metal electrode, wherein the first electrode is supported by a support membrane over an air cavity, the air cavity embedded in a silicon dioxide layer over a silicon handle, with through-silicon via holes through the silicon handle and into the air cavity, the side walls of said air cavity in the silicon dioxide layer being defined by perimeter trenches that are resistant to a silicon oxide etchant.