Temperature compensation of an acoustic stack is disclosed. A first temperature compensation layer is disposed between a first surface of a substrate and a second surface of a piezoelectric layer; and a second temperature compensation layer is disposed over the plurality of electrodes. A temperature coefficient of frequency (TCF) of the acoustic stack is approximately zero (0.0) over a frequency range of Band 13.

Aspects herein include minimizing hot spots on a filter chip by creating thermal radiators using mechano-acoustic structures and connection circuitry. A gradual increase of metal to wafer relation provides better heat dissipation and heat sinking. Shunt lines of a ladder type arrangement of SAW resonators comprise a broadened section. Resonators that are subsequent to each other in the series signal line are connected via a common busbar extending over a length of subsequent series resonators. A lateral extension of the common busbars represents a first section of a respective shunt line. A first shunt line section between a node and the parallel resonator of a shunt line comprises a section that is broader than the common busbar, the broadened section extending over the width of the parallel resonator. The first reflector of the parallel resonator that faces the laterally adjacent series resonator is formed from the broadened section.

An acoustic wave device includes a support substrate, a medium layer formed on the support substrate, a piezoelectric substrate formed on the medium layer, and a resonator including IDT electrodes formed on the piezoelectric substrate. The medium layer includes stripe-shaped first acoustic impedance regions having a longitudinal direction and a lateral direction, and stripe-shaped second acoustic impedance regions having a longitudinal direction and a lateral direction and an acoustic impedance different from that of the first acoustic impedance regions, which are alternately arranged with the first acoustic impedance region.

A surface acoustic wave device is disclosed. The surface acoustic wave device can include a support substrate, a piezoelectric structure that includes a first region having a first thickness, a second region having a second thickness different from the first thickness, and a third region sloped between the first region and the second region, a first surface acoustic wave element that is positioned in the first region, and a second surface acoustic wave element that is positioned in the second region.

A surface acoustic wave device is disclosed. The surface acoustic wave device can include a support substrate, a piezoelectric structure that includes a first region having a first thickness, a second region having a second thickness different from the first thickness, and a third region sloped between the first region and the second region, a first surface acoustic wave element that is positioned in the first region, and a second surface acoustic wave element that is positioned in the second region.

Trim layers that are configured to adjust one or more operating parameters for surface acoustic wave (SAW) devices are disclosed. A SAW device may include an interdigital transducer (IDT) and a piezoelectric material that are configured to generate an acoustic wave and a trim layer that has an acoustic velocity and a density that correspond to a velocity of the acoustic wave. In this manner, the trim layer may be configured to adjust an electromechanical coupling of the SAW device without significantly impacting a resonance frequency of the SAW device. The SAW device may also include an additional trim layer that is configured to adjust a coupling percentage and the resonance frequency of the SAW device. A SAW device may include a trim layer that is configured to adjust certain operating parameters by greater amounts than other operating parameters.

Trim layers that are configured to adjust one or more operating parameters for surface acoustic wave (SAW) devices are disclosed. A SAW device may include an interdigital transducer (IDT) and a piezoelectric material that are configured to generate an acoustic wave and a trim layer that has an acoustic velocity and a density that correspond to a velocity of the acoustic wave. In this manner, the trim layer may be configured to adjust an electromechanical coupling of the SAW device without significantly impacting a resonance frequency of the SAW device. The SAW device may also include an additional trim layer that is configured to adjust a coupling percentage and the resonance frequency of the SAW device. A SAW device may include a trim layer that is configured to adjust certain operating parameters by greater amounts than other operating parameters.

A bonded body includes a supporting substrate, piezoelectric material substrate and a multilayer film between the supporting substrate and piezoelectric material substrate. The multilayer film includes a lamination structure having a first layer, second layer, third layer and fourth layer in that order. The first layer and third layer are composed of silicon oxides, and the second layer and fourth layer are composed of metal oxides. The refractive index of the second layer is higher than the refractive index of the first layer and refractive index of the third layer. The refractive index of the second layer is different from the refractive index of the fourth layer.

A bonded body includes a supporting substrate, piezoelectric material substrate and a multilayer film between the supporting substrate and piezoelectric material substrate. The multilayer film includes a lamination structure having a first layer, second layer, third layer and fourth layer in that order. The first layer and third layer are composed of silicon oxides, and the second layer and fourth layer are composed of metal oxides. The refractive index of the second layer is higher than the refractive index of the first layer and refractive index of the third layer. The refractive index of the second layer is different from the refractive index of the fourth layer.

Aspects of this disclosure relate to an acoustic wave resonator with a patterned conductive layer. The acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a temperature compensation layer over the interdigital transducer electrode. The interdigital transducer electrode can include a bus bar and fingers extending from the bus bar. The fingers can each include an edge portion and a body portion. The patterned conductive layer can overlap the edge portions of the fingers. The patterned conductive layer can conductive portions that are spaced apart from each other. A portion of the temperature compensation layer can be positioned between the patterned conductive layer and the interdigital transducer electrode.