A resonator system is provided in which a combined overtone resonator device is excited with a two-dimensional mode of mechanical vibration in a cross sectional plane of a piezoelectric plate in response to an alternating voltage applied through an interdigitated electrode. The cross sectional plane extends along the width direction and the thickness direction, and the two-dimensional mode of mechanical vibration is a two-dimensional combined overtone mode of second and third order asymmetrical Lamb-wave overtones.

A resonator includes a support frame, a rectangular vibrating plate that performs contour vibration in a predetermined direction, and two pairs of support arms. The vibrating plate includes four vibration regions arranged in a row in the lengthwise direction and electrodes disposed in the vibration regions. Each of the vibration regions vibrate with a phase opposite to phases with which the adjacent vibration regions vibrate upon excitation. A center line of a pair of the electrodes in the lengthwise direction is offset from a center line, in the lengthwise direction, of a corresponding vibration region that includes the electrode disposed thereon.

A resonator that includes a piezoelectric vibrator, a frame, and a first node generator between the piezoelectric vibrator and the frame. Moreover, a first connecting arm connects the first node generator to the piezoelectric vibrator that opposes the first, and a first holding arm connects the first node generator to a part of the frame that opposes the first node generator. The first node generator includes a width extending in a second direction, which is orthogonal to a first direction of the first connecting arm, that is a maximum width where the first node generator is closer to the first connecting arm than a center of the first node generator relative to the first direction. Moreover, the width of the first node generator gradually decreases from the maximum width as the first node generator extends towards the first holding arm.

A resonant transducer includes a resonant beam which is formed on a semiconductor substrate, a support beam of which one end is connected to a part of the resonant beam at a predetermined angle, a first electrode which is connected to the resonant beam via the support beam, a second electrode which is disposed adjacent to a center of one side surface of the resonant beam, and a conductor which is disposed between the support beam and the second electrode, the conductor being connected to the first electrode.

The present invention relates to a mechanical resonator device. The resonator device comprises a resonator element made of an elastic material under tensile stress and adapted for sustaining at least one oscillation mode; and a clamping structure supporting the resonator element. The clamping structure has a phononic density of states exhibiting a bandgap or quasi-bandgap such that elastic waves of at least one polarisation and/or frequency are not allowed to propagate through the clamping structure. The resonator element and the clamping structure are configured to match with a soft-clamping condition that elastic waves of polarisation and/or frequency corresponding to the at least one oscillation mode of the resonator penetrate evanescently into the clamping structure in a manner such as to minimize bending throughout the entire resonator device. Thereby, bending related loss may be minimized and the Q-factor of the mechanical resonator may be maximized.

A resonator is provided that includes a vibrating section that vibrates in a contour vibration mode, a frame that surrounds at least a portion of the vibrating section, supporting sections extending along a Y-axis direction and connecting the vibrating section and the frame. The vibrating section includes a through hole that extends along an X-axis direction perpendicular to the Y-axis direction such that a coupling section is disposed between the through hole and each of the supporting sections. The length SL of the through hole in the X-axis direction is longer than the length Sd of the coupling section in the Y-axis direction.

A microelectromechanical (MEMS) resonator includes a resonator structure having a plurality of beam elements and connection elements with certain geometry, where the plurality of beam elements are positioned adjacent to each other and adjacent beam elements are mechanically connected to each other by the connection elements, where the geometry of the beam elements or the connection elements varies within the resonator structure.

A resonator is provided that includes a base, and three or more vibrating arms each including a first and second electrodes and a piezoelectric film disposed therebetween and having a top surface facing the first electrode. The piezoelectric film vibrates in a predetermined vibration mode when a voltage is applied between the first and second electrodes. Moreover, the three or more vibrating arms include two first arms each located on an outermost side in a direction in which the three or more vibrating arms are arranged and that vibrate in a same phase, and one or more second arms disposed between the two first arms. Each first arm is greater in mass than each second arm.

A resonator is provided that includes a vibration member that includes a substrate, a metal layer formed along one of main surfaces of the substrate, and a piezoelectric thin film disposed between the substrate and the metal layer. The vibration member vibrates such that a main vibration is a contour vibration. Moreover, a frame surrounds at least a portion of the vibration member, and a support unit connects the vibration member to the frame. The vibration member includes depressed portions on or above the one of main surfaces where the piezoelectric thin film is removed.

An acoustic resonator includes a piezoelectric stack including a piezoelectric layer having a top surface and a bottom surface, a top electrode layer disposed above the top surface, and a bottom electrode layer disposed below the bottom surface. A number of acoustic wave reflectors are disposed on a side of the bottom electrode layer opposite the piezoelectric layer. Each acoustic wave reflector includes a high acoustic impedance layer and may include a low acoustic impedance layer. The acoustic resonator may include a tether that extends laterally to a stacking direction of the layers of the piezoelectric stack. A supporting structure may be coupled to the tether opposite the acoustic resonator for anchoring the acoustic resonator. A mirror, one or more phononic crystals, or both may be positioned on proximate the tether opposite the acoustic resonator to avoid resonant waves from exiting the acoustic resonator in use.