The present disclosure provides a resonator which resonates in a bulk acoustic wave mode. The resonator includes a resonator body, at least one transducer arm and a substrate. The resonator body is deformed at least along a first direction. The transducer arm is connected to the resonator body along the first direction and includes a base, a piezoelectric layer and an electrode layer. The base includes a first end connected to the resonator body. The piezoelectric layer is disposed above the base but not extended to the resonator body, and the electrode layer is disposed above the piezoelectric layer but not extended to the resonator body. The substrate is for securing the transducer arm such that the resonator body is suspended.

A transmission filter in a high frequency module includes serial arm resonators electrically connected in series to a serial arm electrically connecting a shared terminal and a transmission terminal, parallel arm resonators each electrically connected in series to each of parallel arms electrically connecting the serial arm and a ground, a first inductor electrically connected between the ground and a connection end electrically connecting at least the two parallel arm resonators of the parallel arm resonators, and a second inductor electrically connected between the ground and one parallel arm resonator different from the at least two parallel arm resonators of the parallel arm resonators. The second inductor is electromagnetic field coupled to at least one of an antenna side matching element, a transmission side matching element, and a portion of the serial arm in the transmission filter. The first and second inductors obstruct electromagnetic field coupling therebetween.

A MEMS resonator is provided with improved electrical characteristics and reduced spurious resonances. The MEMS resonator includes two or more first rectangular resonator plates with lengths greater than their respective widths. Moreover, the MEMS resonator includes two or more second rectangular resonator plates that are positioned parallel to the first resonator plates in the widthwise direction of the MEMS resonator. The length of the second resonator plates is different than the length of the first resonator plates to reduce spurious resonances.

A vibration transducer includes a silicon substrate, a first oxide film formed on the silicon substrate, an activation layer formed on the first oxide film, a second oxide film formed on the activation layer, a polysilicon layer formed on the second oxide film, and a substrate contact part. A vibrator, a vibrator electrode electrically conducted with the vibrator, a fixed electrode close to the vibrator and a vacuum chamber configured to surround the vibrator are formed in the activation layer. The polysilicon layer forms a shell. The substrate contact part is configured to electrically conduct the polysilicon layer and the silicon substrate, and is formed to continuously surround the vacuum chamber in a region, in which the vibrator, the vibrator electrode and the fixed electrode of the activation layer are not formed, of the activation layer.

A microelectromechanical system (MEMS) resonator includes a resonant semiconductor structure, drive electrode, sense electrode and electrically conductive shielding structure. The first drive electrode generates a time-varying electrostatic force that causes the resonant semiconductor structure to resonate mechanically, and the first sense electrode generates a timing signal in response to the mechanical resonance of the resonant semiconductor structure. The electrically conductive shielding structure is disposed between the first drive electrode and the first sense electrode to shield the first sense electrode from electric field lines emanating from the first drive electrode.

A transmission filter in a high frequency module includes serial arm resonators electrically connected in series to a serial arm electrically connecting a shared terminal and a transmission terminal, parallel arm resonators each electrically connected in series to each of parallel arms electrically connecting the serial arm and a ground, a first inductor electrically connected between the ground and a connection end electrically connecting at least the two parallel arm resonators of the parallel arm resonators, and a second inductor electrically connected between the ground and one parallel arm resonator different from the at least two parallel arm resonators of the parallel arm resonators. The second inductor is electromagnetic field coupled to at least one of an antenna side matching element, a transmission side matching element, and a portion of the serial arm in the transmission filter. The first and second inductors obstruct electromagnetic field coupling therebetween.

A method of an open loop characterization of an electrostatic MEMS based resonator with a varying gap, the method including: converting, via a trans-impedance amplifier circuit, an output current signal of the resonator into a voltage; multiplying the output current signal converted into the voltage, by means of a multiplier circuit, with an AC signal or with a different signal at a frequency of the resonator and carrying a second harmonic signal to a main tone; and measuring a frequency response of a signal cleared of frequencies apart from the main tone using a network analyzer.

A micromechanical vibrasolator isolates vibration of a micromechanical resonator and includes: phononic bandgap mirrors, monophones connected serially; phonophore arms in an alternating sequence of phonophore arm-monophone-phonophore arm; abutments in acoustic communication with the phononic bandgap mirrors; wherein the micromechanical resonator is interposed between the phononic bandgap mirrors with phononic bandgap mirror arranged in parallel on opposing sides of the micromechanical resonator arranged perpendicular to a direction of vibration of an in-plane vibrational mode of the micromechanical resonator.

In one aspect, the disclosure relates to a super high frequency (SHF) or extremely high frequency (EHF) bulk acoustic resonator that includes a nanostructure, wherein the nanostructure includes a substrate, a three-dimensional structure disposed on the substrate, wherein the three-dimensional structure includes a planar structure including at least one nanocomponent and a matrix material contacting the nanocomponent on at least one side, the matrix material including an SiGe alloy or Ge. The disclosed bulk acoustic resonator operates at frequencies of from about 100 MHz to about 100 GHz, is capable of self-amplification upon application of direct current or voltage, and has a Q factor amplification exceeding 1. Also disclosed are methods for amplification of mechanical resonance in the disclosed bulk acoustic resonators and devices incorporating the bulk acoustic resonators.

The present disclosure relates to a micro electro mechanical system (MEMS) resonator. An example MEMS resonator includes a substrate, a barrier layer, a conducting layer, a dielectric isolation layer, a harmonic oscillator, a first electrical isolation structure, and a first conducting structure. The substrate and the barrier layer are combined to form a cavity, and a junction between the substrate and the barrier layer includes the conducting layer. The dielectric isolation layer is included between the conducting layer and the barrier layer. The harmonic oscillator is connected to the conducting layer and is suspended in the cavity. The conducting layer is connected to a first conducting structure that is outside the barrier layer, and a first electrical isolation structure is included between the first conducting structure and the barrier layer. The barrier layer and the dielectric isolation layer are configured to isolate the first electrical isolation structure from the cavity.