A filter device includes a first filter connected between a common terminal and a first individual terminal, and a second filter connected between the common terminal and a second individual terminal. A pass band of the second filter is in a frequency range lower than a pass band of the first filter. The first filter includes SAW resonators, at least one of which includes divided resonators connected in parallel with each other. Each of the divided resonators includes an IDT. A pitch of the IDT of one of the divided resonators is different from that of another of the divided resonators.

An acoustic wave device includes first and second acoustic wave elements. The first acoustic wave element is disposed on a piezoelectric substrate, and includes at least one first IDT electrode. The second acoustic wave element is disposed on the piezoelectric substrate, and includes at least one second IDT electrode. The first and second acoustic wave elements are adjacent to each other in the direction of acoustic wave propagation. A diffracting component that diffracts an acoustic wave is disposed between the first IDT electrode and the second IDT electrode. The diffracting component includes a gap that defines and functions as a slit to diffract an acoustic wave.

An electroacoustic resonator (EAR) that allows RF filters in which transversal modes are suppressed in a wider frequency range and corresponding RF filters and methods are provided. The resonator has an electrode structure (BB,EF) on a piezoelectric material and a transversal acoustic wave guide. The wave guide has a central excitation area (CEA), trap stripes (TP) and barrier stripes (B). The difference in wave velocity (|VCEA−VB|) between the central excitation area and the barrier stripes determines the frequency range of suppressed transversal modes.

A surface acoustic wave device includes a substrate, a first electrode and a second electrode formed on the substrate to extend along a first direction, wherein the first electrode and the second electrode are alternately disposed along the second direction, one end of the first electrode on one side of the first direction is aligned along the second direction, and one end of the second electrode on the other side of the first direction is aligned along the second direction, a temperature compensation film which covers the first electrode and the second electrode, a first additional film formed on the temperature compensation film to vertically overlap a partial region from the one end of the first electrode on the one side of the first direction, and a second additional film formed on the temperature compensation film to vertically overlap a partial region from the one end of the second electrode.

A surface acoustic wave wafer-level package includes a substrate, an interdigital transducer (IDT) electrode formed on the substrate, a connection electrode electrically connected to the IDT electrode, a side wall formed on the substrate and outside the IDT electrode, a cover formed above the side wall and the IDT electrode to form a cavity, together with the side wall, on the IDT electrode, a connection terminal electrically connected to the connection electrode and protruding above the cover, a first reinforcement layer formed on the cover to at least partially overlap the cavity in a vertical direction, a second reinforcement layer formed to cover the cover and the first reinforcement layer and having holes formed in a portion corresponding to the connection terminal and a portion corresponding to the first reinforcement layer, and bumps formed in the respective holes of the second reinforcement layer to protrude above the second reinforcement layer.

The present disclosure provides an acoustic resonator device, among other things. One example of the disclosed acoustic resonator device includes a substrate having a carrier layer, a first layer disposed over the carrier layer, and a piezoelectric layer disposed over the first layer. The acoustic resonator device is also disclosed to include an interdigitated metal disposed over the piezoelectric layer, where the interdigitated metal is configured to generate acoustic waves within an acoustically active region. The acoustic resonator device is further disclosed to include an acoustic wave scattering structure.

A piezoelectric thin film (PTF) is located above a carrier substrate. The PTF may be Z-cut LiNbO.sub.3 thin film adapted to propagate an acoustic wave in at least one of a first mode excited by an electric field oriented in a longitudinal direction along a length of the PTF or a second mode excited by the electric field oriented at least partially in a thickness direction of the PTF. A first interdigitated transducer (IDT) is disposed on a first end of the PTF. The first IDT is to convert a first electromagnetic signal, traveling in the longitudinal direction, into the acoustic wave. A second IDT is disposed on a second end of the PTF with a gap between the second IDT and the first IDT. The second IDT is to convert the acoustic wave into a second electromagnetic signal, and the gap determines a time delay of the acoustic wave.

A piezoelectric thin film (PTF) is located above a carrier substrate. The PTF can be an aluminum nitride thin film adapted to propagate an acoustic wave in at least one of a first mode excited by an electric field oriented at least partially in a longitudinal direction along a length of the PTF or a second mode excited by the electric field oriented in a thickness direction of the PTF. A first interdigitated transducer (IDT) is disposed on a first end of the PTF and converts a first electromagnetic signal, traveling in the longitudinal direction, into the acoustic wave. A second IDT is disposed on a second end of the PTF with a gap between the second IDT and the first IDT. The second IDT is to convert the acoustic wave into a second electromagnetic signal, and the gap determines a time delay of the acoustic wave.

A piezoelectric thin film (PTF) is located above a carrier substrate. The PTF may be X-cut LiNbO.sub.3 thin film adapted to propagate an acoustic wave in at least one of a first mode excited by an electric field oriented in a longitudinal direction along a length of the PTF or a second mode excited by the electric field oriented at least partially in a thickness direction of the PTF. A first interdigitated transducer (IDT) is disposed on a first end of the PTF. The first IDT is to convert a first electromagnetic signal, traveling in the longitudinal direction, into the acoustic wave. A second IDT is disposed on a second end of the PTF with a gap between the second IDT and the first IDT. The second IDT is to convert the acoustic wave into a second electromagnetic signal.

A focusing interdigital transducer (IDT) and corresponding single- and dual-port piezoelectric devices are disclosed. The focusing interdigital transducer, which generates Lam acoustic waves, permits operation at significantly higher frequencies than those possible with traditional IDTs. The focusing IDT employs multiple arced fingers formed both above and below the piezoelectric layer to improve coupling efficiency by coupling through both the e.sub.31 and e.sub.33 piezoelectric coefficients to the piezoelectric layer. By optimizing both anchor design and location, acoustic wave losses are minimized, thereby improving the device's quality factor Q. Through proper bus design and selection of the number of IDT fingers, a device's impedance can be tuned for a given application. The focusing IDTs may be used in single-port filter devices and dual-port transformer devices. The single- and dual-port devices may operate at a single frequency, at two frequencies, or over a band of frequencies.