Patent classifications
H03H9/058
SIMPLE TO PRODUCE ELECTRIC COMPONENT AND METHOD FOR PRODUCING AN ELECTRIC COMPONENT
The invention relates to a simple to produce electric component for chips with sensitive component structures. Said component comprises a connection structure and a switching structure on the underside of the chip and a support substrate with at least one polymer layer.
Elastic wave device
An elastic wave device includes a piezoelectric substrate including first and second primary surfaces opposing one another, a via electrode extending through the piezoelectric substrate, and a wiring electrode on the first primary surface of the piezoelectric substrate. The via electrode is connected at one end to the wiring electrode, and the via electrode includes a locking section at the one end, on the wiring electrode side. The locking section extends on the first primary surface of the piezoelectric substrate.
FILTER DEVICE, RF FRONT-END DEVICE AND WIRELESS COMMUNICATION DEVICE
The invention provides a filter device, an RF front-end device and a wireless communication device. The filter device comprises a substrate, at least one resonance device, a passive device and a connector, wherein the at least one resonance device has a first side and a second side opposite to the first side, the substrate is located on the first side, and the passive device is located on the second side. The at least one resonance device is connected to the passive device through the connector. The RF filter device formed by integrating the resonance device (such as an SAW resonance device or a BAW resonance device) and the passive device (such as an IPD) in one die can broaden the passband width, has a high out-of-band rejection, and occupies less space in an RF front-end chip.
Surface Acoustic Wave Filter
This invention discloses a acoustic surface wave filter in the field of acoustic surface wave filters. The acoustic surface wave filter consists of two different piezoelectric substrates, a series resonator group is made on one piezoelectric substrate, and a parallel resonators group is made on the other; The series and parallel resonator groups on the piezoelectric substrates form a trapezoidal structure; the series resonator group is connected with the parallel resonator group; in which the series resonator group is composed of several series resonators and electrodes, and the parallel resonator group is composed of several parallel resonators and electrodes; as a result, the problems that the present acoustic surface wave filters are difficult to satisfy different relative bandwidths and better rectangle coefficient simultaneously are solved; and the effects of increasing the relative bandwidth of the acoustic surface wave filter, reducing the insertion loss and optimizing the rectangle coefficient are achieved.
SURFACE ACOUSTIC WAVE DEVICE
A surface acoustic wave device includes a piezoelectric substrate including principal surfaces and an IDT electrode on a first principal surface side of the principal surfaces, and the first principal surface is a polarization positive potential surface of the piezoelectric substrate.
PACKAGE COMPRISING STACKED FILTERS WITH A SHARED SUBSTRATE CAP
A package that includes a first filter comprising a first polymer, a substrate cap, a second filter comprising a second polymer frame, at least one interconnect, an encapsulation layer and a plurality of through encapsulation vias. The substrate cap is coupled to the first polymer frame such that a first void is formed between the substrate cap and the first filter. The second polymer frame is coupled to the substrate cap such that a second void is formed between the substrate cap and the second filter. The at least one interconnect is coupled to the first filter and the second filter. The encapsulation layer encapsulates the first filter, the substrate cap, the second filter, and the at least one interconnect. The plurality of through encapsulation vias coupled to the first filter.
Elastic wave device
An elastic wave device includes a spacer layer on or above a support substrate and outside a piezoelectric film as seen in a plan view from a thickness direction of the support substrate. A cover layer is disposed on the spacer layer. A through electrode extends through the spacer layer and the cover layer and is electrically connected to the wiring electrode. The wiring electrode includes a first section overlapping the through electrode as seen in the plan view from the thickness direction, a second section overlapping the piezoelectric film as seen in the plan view from the thickness direction, and a step portion defining a step in the thickness direction between the first section and the second section. The spacer layer includes an end portion embedded in the cover layer.
Apparatus for automatic sampling of biological species employing an amplification with a magnetic nanoparticle and propulsion method
An cartridge is combined with a smart device which is capable of communicating with a network to perform a portable, fast, field assay of a small sample biological analyte. A closed microfluidic circuit for mixes the analyte with a buffer with functionalized magnetic beads capable of being specifically combined with the analyte. A detector communicates with the microfluidic circuit in which the mixed analyte, buffer and combined functionalized magnetic beads are sensed. A microcontroller is coupled to detector for controlling the detector and for data processing an output assay signal from the detector. A user interface communicates with the microcontroller for providing user input and for providing user output through the smart device to the network.
SINGLE SUBSTRATE MULTIPLEXER
At least three acoustic filters circuits FC are arranged on a single chip CH. At least two of them are electrically connected already on the chip for multiplexing. This reduces space consumption and leads to smaller device size.
Elastic wave device, high-frequency front-end circuit, and communication apparatus
An elastic wave device includes a SiN.sub.x layer stacked directly or indirectly on a supporting substrate made of a semiconductor material, a piezoelectric film stacked on directly or indirectly the SiN.sub.x layer, and an interdigital transducer electrode stacked directly or indirectly on at least one main surface of the piezoelectric film. In the SiN.sub.x layer, x is about 1.34 or more and about 1.66 or less.