A resonance device that includes a MEMS substrate including a resonator, an upper cover, and a bonding portion that bonds the MEMS substrate to the upper cover to seal a vibration space of the resonator. The bonding portion includes a eutectic layer composed of a eutectic alloy of germanium and a metal mainly containing aluminum, a first titanium (Ti) layer, a first aluminum oxide film, and a first conductive layer consecutively arranged from the MEMS substrate to the upper cover.

A resonance device includes a resonator, an upper lid, and a lower lid. The resonator includes a vibration portion, a frame, and holding arms. The vibration portion includes a base and a plurality of vibration arms. The lower lid has a protruding portion protruding between two adjacent vibration arms, the protruding portion has an insulating film, the vibration arms have a weight portion that has a conductive film formed on the insulating film, and in a direction in which the plurality of vibration arms extend, a first distance between the weight portion of any one of the two adjacent vibration arms and the holding portion is less than a second distance between the weight portion and the protruding portion.

A resonator is provided that includes a vibrating portion including three or more vibrating arms with at least two vibrating arms that bend out of plane with different phases and a base. The resonator also includes a frame that holds the vibrating portion; and a support arm having one end connected to the frame and the other end connected to a rear end portion of the base. The other end of the support arm is connected to a position in a range from −0.1 WB to 0.1 WB, with respect to a base width WB of the base, relative to a position, on the rear end portion of the base where a center line passes in a plan view. A support arm length of the support arm is 0.2 or more times and 0.4 or less times a vibrating arm length of the vibrating arms.

The disclosed technology generally relates to quartz crystal devices and more particularly to quartz crystal devices configured to vibrate in torsional mode. In one aspect, a quartz crystal device configured for temperature sensing comprises a fork-shaped quartz crystal comprising a pair of elongate tines laterally extending from a base region in a horizontal lengthwise direction of the fork-shaped quartz crystal, wherein each of the tines has formed on one or both of opposing sides thereof a pair of vertically recessed groove structures laterally elongated in the horizontal lengthwise direction, wherein the pair of groove structures are separated in a horizontal widthwise direction by a line structure. The quartz crystal device further comprises a first electrode and a second electrode formed on the one or both of the opposing sides of each of the tines and configured such that, when an electrical bias is applied between the first and second electrodes, the fork-shaped quartz crystal vibrates in a torsional mode in which each of the tines twists about a respective axis extending in the horizontal lengthwise direction.

A method of manufacturing an integrated circuit. This method includes forming an epitaxial material comprising single crystal piezo material overlying a surface region of a substrate to a desired thickness and forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material. Also, the method includes forming a topside landing pad metal and a first electrode member overlying a portion of the epitaxial material and a second electrode member overlying the topside landing pad metal. Furthermore, the method can include processing the backside of the substrate to form a backside trench region exposing a backside of the epitaxial material and the landing pad metal and forming a backside resonator metal material overlying the backside of the epitaxial material to couple to the second electrode member overlying the topside landing pad metal.

A resonator is provided that includes a vibration member including three or more vibration arms that each have a fixed end with at least two vibration arms performing out-of-plane bending at different phases. The resonator also includes a base having a front end connected to the fixed end of each of the vibration arms and a rear end opposing the front end. A frame holds the vibration member and two support arms are provided with first ends connected to the frame. The second ends of the two support arms are connected to a location in the rear end of the base.

A resonator may include a vibrating portion that includes a plurality of vibrating arms to numbering in three or more, each having a fixed end, and including at least two vibrating arms to bend out of plane with different phases and a base portion having a fore end portion to which the fixed end of each of the plurality of vibrating arms to is connected and a rear end portion opposed to the fore end portion; a holding portion configured to hold the vibrating portion; and a support arm having one end connected to the holding portion and the other end connected to the rear end portion of the base portion. The support arm is asymmetric with respect to a center line of the vibrating portion with respect to a longitudinal direction in plan view.

There is provided a piezoelectric vibrator element which is excellent in vibration characteristics, high in quality, and capable of suppressing a frequency fluctuation after a frequency adjustment. The piezoelectric vibrator element is provided with a piezoelectric plate having a pair of vibrating arm parts, an electrode film disposed on obverse and reverse surfaces of the piezoelectric plate, and weight metal films for a frequency adjustment disposed on the electrode film at the obverse surface side in the vibrating arm parts. The reverse surface of the vibrating arm part has a reverse side exposure part from which the piezoelectric plate is exposed. The obverse surface of the vibrating arm part has an obverse side exposure part from which the weight metal film and the electrode film are removed, and from which the piezoelectric plate is exposed. A whole of the obverse side exposure part overlaps the reverse side exposure part at a distance from the electrode film on the reverse surface viewed from a thickness direction of the piezoelectric plate.

A vibration element includes a base and a vibrating arm extending from the base. The vibrating arm includes an arm positioned between the base and a weight. A weight film is disposed on the weight. The weight has a first principal surface and a second principal surface in a front and back relationship with respect to a center plane of the arm. A center of gravity of the weight is located between the first principal surface and the center plane of the arm. A center of gravity of the weight film is located between the second principal surface and the center plane of the arm.

A gallium nitride structure that includes: a substrate; a gallium nitride layer opposed to the substrate and containing gallium nitride as a main component thereof; and a first electrode between the gallium nitride layer and the substrate. The first electrode includes at least one hafnium layer containing a single metal of hafnium as a main component thereof, and the at least one hafnium layer is in contact with the gallium nitride layer.