An electronic component comprises a substrate including a main surface on which a functional unit is formed and a cap layer defining a cavity enclosing and covering the functional unit. The cap layer is provided with holes communicating an inside of the cavity with an outside of the cavity. A resin layer covers the cap layer and the main surface and includes one or more bores and a solder layer having a thickness less than a thickness of the resin layer disposed within the one or more bores.

The invention provides a film bulk acoustic resonator including a layered structure composed of a top electrode, a piezoelectric layer and a bottom electrode, and a substrate; a reflective interface is arranged between the bottom electrode and the substrate; and by defining the shape of all or part of the layered structure, the purpose of suppressing the lateral mode can be achieved, and without adding new process, the manufacturing cost of the device can be controlled, and the benefit of product development can be maximized.

An acoustic wave device including: a POI structure including: a material layer where a high acoustic velocity layer and a low acoustic velocity layer are alternate, a substrate is a lowermost high acoustic velocity layer; a first piezoelectric layer located above the material layer, wherein a layer adjacent to the first piezoelectric layer is referred to as a surface low acoustic velocity layer; wherein an acoustic velocity of a bulk wave propagated in the high acoustic velocity layer and the low high acoustic velocity layer is higher than and lower than an acoustic velocity of a bulk wave of the first piezoelectric layer, respectively. The POI structure includes at least two regions, a first device having a resonance of a first vibration mode is manufactured in the first region, and a second device having a resonance of a second vibration mode is manufactured in a second region.

An acoustic wave device includes a piezoelectric substrate, a pair of interleaved interdigital transducer electrodes disposed on the piezoelectric substrate, and a dielectric film including silicon oxynitride covering the pair of interleaved interdigital transducer electrodes. The dielectric film exhibits a temperature coefficient of velocity of substantially zero throughout an operating temperature range of the acoustic wave device of between −55° C. and 125° C.

A high Q acoustic BAW resonator with high coupling and improved spurious mode suppression is given. The BAW resonator comprises an active resonator region (AR) formed by an overlap of the three layers bottom electrode (BE), piezoelectric layer (PL) and top electrode layer (TE). An inner-flap (IF) is formed by a dielectric 3D structure sitting on a marginal region (MR) of the active resonator region (AR) or adjacent thereto, extending inwardly towards the center thereof and having a section that runs in parallel and distant to the top surface of the resonator keeping an inner gap (IG) thereto or an angle Θ.

A resonance device with improved precision of temperature control. The resonance device includes a platform; a resonator including a vibrator and one or more holding arms that connect the vibrator and the platform to each other such that a first groove is provided around the vibrator. Moreover, the resonance device includes a sensor with a measurement portion that measures temperature and a heater formed on the platform. A second groove is provided between the measurement portion and the heater.

A piezoelectric film including a piezoelectric body configured to extract radio waves of a required frequency by resonance is provided. The piezoelectric body is based on either of ScAlN or AlN, and an X-ray rocking curve full-width at half-maximum (FWHM) of the piezoelectric body in a lattice plane with a Miller index of (11-20) is not more than 10°.

Gallium nitride (GaN) integrated circuit technology with resonators is described. In an example, an integrated circuit structure includes a layer or substrate including gallium and nitrogen. A first plurality of electrodes is over the layer or substrate. A resonator layer is on the first plurality of electrodes, the resonator layer including aluminum and nitrogen. A second plurality of electrodes is on the resonator layer. Individual ones of the second plurality of electrodes are vertically over and aligned with corresponding individual ones of the first plurality of electrodes.

Devices and systems useful in concurrently receiving and transmitting Wi-Fi signals and Bluetooth signals in the same frequency band are provided. By way of example, an electronic device includes a transceiver configured to transmit data and to receive data over channels of a first wireless network and a second wireless network concurrently. The transceiver includes a plurality of filters configured to allow the transceiver to transmit the data and to receive the data in the same frequency band by reducing interference between signals of the first wireless network and the second wireless network.

A micro-resonator includes a first electrode positioned on a piezoelectric plate at a first end of the piezoelectric plate, the first electrode including a first set of fingers and a second electrode positioned on the piezoelectric plate at a second end of the piezoelectric plate. The second electrode including a second set of fingers interdigitated with the first set of fingers with an overlapping distance without touching the first set of fingers, the overlapping distance being less than seven-tenths the length of one of the first set of fingers or the second set of fingers. At least one of the first end or the second end of the piezoelectric plate may define a curved shape.