Film bulk acoustic resonator (FBAR) is provided. An exemplary FBAR includes a substrate; a first insulating material layer on the substrate, the first insulating material layer containing a first cavity; a second insulating material layer on the first insulating material layer, the second insulating material layer containing a second cavity and a third cavity spaced apart from the second cavity, the second cavity and the third cavity both in communication with the first cavity; a resonator sheet covering the second cavity and partially extending over the second insulating material layer; a third insulating material layer over the second insulating material layer and the resonator sheet, the third insulating material layer containing a fourth cavity, the fourth cavity in communication with the third cavity, and the fourth cavity partially overlapping the second cavity; and a capping layer on the third insulating material layer.

Devices and systems useful in concurrently receiving and transmitting Wi-Fi signals and Bluetooth signals in the same frequency band are provided. By way of example, an electronic device includes a transceiver configured to transmit data and to receive data over channels of a first wireless network and a second wireless network concurrently. The transceiver includes a plurality of filters configured to allow the transceiver to transmit the data and to receive the data in the same frequency band by reducing interference between signals of the first wireless network and the second wireless network.

A resonance device that includes a MEMS substrate, a top cover, and a bonding part. The MEMS substrate includes a resonator. The bonding part is electrically conductive and bonds the MEMS substrate and the top cover to each other. The MEMS substrate further includes a wiring line layer and an anti-diffusion layer. The wiring line layer is electrically connected to a Si substrate serving as a lower electrode of the resonator. The anti-diffusion layer electrically connects the wiring line layer and the bonding part to each other.

A surface-guided bulk wave transducer includes a stack of an acoustic substrate, an electric ground plane, and a network of synchronous acoustic excitation sources with two combs of elementary piezoelectric transducers alternately interlaced two-by-two according to a periodic network step corresponding to a propagation mode of a surface-guided bulk wave of the acoustic substrate. Each elementary piezoelectric transducer includes a single and different rod with a parallelepipedal shape for which the nature, the cut of the piezoelectric material, the height h, and the width are selected for increasing the electromechanical coupling coefficient of the transducer assembly to a high level.

A BAW component, a lamination for a BAW component, and a method for manufacturing a BAW component are provided. A lamination for a BAW component includes a first layer with a first piezoelectric material and a second layer with a second piezoelectric material that is different than the first piezoelectric material. The first and the second piezoelectric material can be Sc doped AlN and AlN, respectively.

A piezoelectric vibrator according to the invention has a base, an integrated circuit element, and a piezoelectric vibration element. The base has internal terminal pads, and external terminals including an AC output terminal. The base includes rectangular ceramic substrate layers stacked in at least three layers, each of which has castellations formed at four corners. Among the internal terminal pads, internal terminal pads for the integrated circuit element and internal terminal pads for the piezoelectric vibration element are connected to each other by externally exposed wiring patterns formed on upper surfaces of the castellations at the corners of the ceramic substrate constituting a middle layer.

An acoustic wave component is disclosed. The acoustic wave component can include a bulk acoustic wave resonator and a surface acoustic wave device. The bulk acoustic wave resonator can include a first portion of a ceramic substrate, a first piezoelectric layer positioned on the ceramic substrate, and electrodes positioned on opposing sides of the first piezoelectric layer. The surface acoustic wave device can include a second portion of the ceramic substrate, a second piezoelectric layer positioned on the ceramic substrate, and an interdigital transducer electrode on the second piezoelectric layer.

An acoustic resonator structure comprises: a substrate comprising a cavity having a plurality of sides; a first electrode disposed over the cavity; a first connection portion that connects to the first electrode over only one side of the plurality of sides of the cavity; a piezoelectric layer disposed over at least a portion of the first electrode; a second electrode disposed over the piezoelectric layer; and a second connection portion that connects to the second electrode over only the one side of the plurality of sides. The second connection portion does not overlap the first connection portion, and a contacting overlap of the first electrode, the piezoelectric layer and the second electrode provides an active area of the acoustic resonator.

A bulk-acoustic wave resonator includes a substrate, a resonance portion including a first electrode, a piezoelectric layer, and a second electrode, stacked in this order on the substrate, and a seed layer disposed below the first electrode, wherein the resonance portion includes an active portion disposed in a central portion of the resonance portion, and a lateral resonance suppressing portion disposed to surround the active portion, wherein a thickness distribution of the seed layer, the first electrode, the piezoelectric layer, and the second electrode in the lateral resonance suppressing portion is different from a thickness distribution in the active portion.

An elastic wave device is provided that has an phase velocity optimum for a high-frequency oscillation as well as a preferred frequency temperature behavior that exhibits a cubic curve by utilizing a rotated Y-cut quartz crystal substrate with novel Euler angles of rotation. The elastic wave device includes a quartz crystal substrate and an excitation-electrode. The quartz crystal substrate is cut out from a quartz crystal body that has a particular three-dimensional crystallite orientation. The quartz crystal substrate is cut at rotation angles specified by right-handed Euler-angles. The excitation-electrode generates a plurality of plate waves on a front surface of the quartz crystal substrate. The quartz crystal substrate is cut at rotation angles in a given range. The selected vibration mode of the quartz crystal substrate is a plate wave having a primary and a secondary temperature coefficient in given ranges with Taylor expansion performed at a particular temperature.