A MEMS (microelectromechanical system) resonator assembly (100), comprising a support structure (102), a resonator element (101) suspended to the support structure (102), and an actuator for exciting the resonator element (101) to a resonance mode. The resonator element (101) vibrates at resonance frequency f.sub.0 and comprises at least one bulk acoustic resonator (110a, 110b). The ESR*A*f.sub.0 values of the resonator assembly (100) are in the range from 12 mm.sup.2 MHz to 83 mm.sup.2 MHZ.

A MEMS (microelectromechanical system) resonator assembly (100), comprising a support structure (102), a resonator element (101) suspended to the support structure (102), and an actuator for exciting the resonator element (101) to a resonance mode. The resonator element (101) comprises two bulk acoustic resonators (110a, 110b) and a flexural mode resonator (120). The flexural mode resonator (120) mechanically connects the two bulk acoustic resonators (110a, 110b), and the MEMS resonator assembly (100) is configured to vibrate in a collective resonance mode in which motions of the two bulk acoustic resonators (110a, 110b) are substantially in the same or 180 degrees shifted phase with respect to each other.

Suppression of spurious modes of vibration for resonators and related apparatus and methods. A device may include a MEMS resonating structure, a substrate, and anchors between the MEMS resonating structure and the substrate. The MEMS resonating structure may have at least one main eigenmode of vibration and at least one spurious eigenmode of vibration. The anchors may be configured to suppress the response of the at least one spurious mode of vibration.

Apparatus and methods for control of the second order temperature dependence of the frequency of a mechanical resonating structure are described. The second order temperature dependence of frequency of the mechanical resonating structure may be non-linear. Control may be provided by doping of a semiconductor layer of the mechanical resonating structure.

The invention concerns a micromechanical device and method of manufacturing thereof. The device comprises an oscillating or deflecting element made of semiconductor material comprising n-type doping agent and excitation or sensing means functionally connected to said oscillating or deflecting element. According to the invention, the oscillating or deflecting element is essentially homogeneously doped with said n-type doping agent. The invention allows for designing a variety of practical resonators having a low temperature drift.