A MEMS device may include: (i) a lower cavity, including a first island, formed within a first layer of the MEMS device; (ii) an upper cavity, including a second island, formed within a second layer of the MEMS device; (iii) a MEMS resonating element arranged in a device layer of the MEMS device and anchored via the first and second islands; (iv) a first set of electrodes for electrostatic actuation and sensing of the MEMS resonating element in an in-plane mode that is arranged in the device layer of the MEMS device; and (v) a second set of electrodes for electrostatic actuation and sensing of the MEMS resonating element in an out-of-plane mode that is electrically isolated from the first set of electrodes and located in the first or second layer of the MEMS device, and wherein the out-of-plane mode is a torsional mode or a saddle mode.

A micro-resonator employs a lid-integrated electrode to one or more of drive, sense and tune a vibrational resonant mode of a microelectromechanical systems (MEMS) resonator. The micro-resonator includes a lid attached to a base that provides a resonator cavity. The micro-resonator further includes the MEMS resonator extending from a surface of the base toward the lid within the resonator cavity. The lid-integrated electrode extends vertically from the lid into the resonator cavity toward the base. The vertically extending, lid-integrated electrode is positioned spaced from and adjacent to a side of the MEMS resonator to one or more of drive, sense and tune mechanical movement of the MEMS resonator.

A resonant body high electron mobility transistor is described with resonance frequencies in gigahertz regime, limited by the cutoff frequency of the readout transistor. Piezoelectric materials form the resonating membrane of the device. Different modes of acoustic resonance, such as a thickness-mode, can be excited and amplified by applying an AC signal to the transducer electrode and proper biasing of all electrodes. The drain electrode reads out the acoustic resonance and amplifies it. The drain electrode is placed at or near where the piezoelectric charge pickup is maximum; whereas, the source electrode is placed at a nodal point with minimum displacement.

In examples, a device comprises a semiconductor die, a thin-film layer, and an air cavity positioned between the semiconductor die and the thin-film layer. The air cavity comprises a resonator positioned on the semiconductor die. A rib couples to a surface of the thin-film layer opposite the air cavity.

A spectrum analyzer includes: a support substrate; and a plurality of resonators that have center frequencies different from each other, one end of each of the plurality of resonators being fixed to the support substrate. The plurality of resonators are arranged so that an interval between resonators having adjacent center frequencies is secured by a certain value or greater, thus reducing coupling and increasing analysis accuracy.

The present disclosure provides a semiconductor package structure. The semiconductor package structure includes a substrate, a first electronic component and a support component. The first electronic component is disposed on the substrate. The first electronic component has a backside surface facing a first surface of the substrate. The support component is disposed between the backside surface of the first electronic component and the first surface of the substrate. The backside surface of the first electronic component has a first portion connected to the support component and a second portion exposed from the support component.

A radio frequency (RF) MEMS resonator is embedded in an active positive feedback loop to form a tunable RF channel-selecting radio transceiver employing a super-regenerative reception scheme. This transceiver harnesses the exceptionally high Q (around 100,000) and voltage-controlled frequency tuning of a resonator structure to enable selection of any one of among twenty 1 kHz wide RF channels over an 80 kHz range, while rejecting adjacent channels and consuming <490 W. Such transceivers are well suited to wireless sensor node applications, where low-power and simplicity trump transmission rate. Electrical stiffness-based frequency tuning also allows this same device to operate as a frequency shift keyed (FSK) transmitter, making a complete transceiver in one simple device. Finally, the geometric flexibility of resonator structure design should permit a large range of usable RF frequencies, from the presently demonstrated 60.6-MHz VHF, all the way up to UHF.

A radio frequency (RF) MEMS resonator is embedded in an active positive feedback loop to form a tunable RF channel-selecting radio transceiver employing a super-regenerative reception scheme. This transceiver harnesses the exceptionally high Q (around 100,000) and voltage-controlled frequency tuning of a resonator structure to enable selection of any one of among twenty 1 kHz wide RF channels over an 80 kHz range, while rejecting adjacent channels and consuming <490 W. Such transceivers are well suited to wireless sensor node applications, where low-power and simplicity trump transmission rate. Electrical stiffness-based frequency tuning also allows this same device to operate as a frequency shift keyed (FSK) transmitter, making a complete transceiver in one simple device. Finally, the geometric flexibility of resonator structure design should permit a large range of usable RF frequencies, from the presently demonstrated 60.6-MHz VHF, all the way up to UHF.

Active feedback is used with two electrodes of a four-electrode capacitive-gap transduced wine-glass disk resonator to enable boosting of an intrinsic resonator Q and to allow independent control of insertion loss across the two other electrodes. Two such Q-boosted resonators configured as parallel micromechanical filters may achieve a tiny 0.001% bandwidth passband centered around 61 MHz with only 2.7 dB of insertion loss, boosting the intrinsic resonator Q from 57,000, to an active Q of 670,000. The split capacitive coupling electrode design removes amplifier feedback from the signal path, allowing independent control of input-output coupling, Q, and frequency. Controllable resonator Q allows creation of narrow channel-select filters with insertion losses lower than otherwise achievable, and allows maximizing the dynamic range of a communication front-end without the need for a variable gain low noise amplifier.

The present disclosure provides a semiconductor package structure. The semiconductor package structure includes a substrate, a first electronic component and a support component. The first electronic component is disposed on the substrate. The first electronic component has a backside surface facing a first surface of the substrate. The support component is disposed between the backside surface of the first electronic component and the first surface of the substrate. The backside surface of the first electronic component has a first portion connected to the support component and a second portion exposed from the support component.