A MEMS resonator array is provided with improved electrical characteristics and reduced motional impedance at high frequency applications. The MEMS resonator array includes a pair of first piezoelectric resonators that are opposed to each other with a space defined therebetween. Moreover, the MEMS resonator array includes a pair of second piezoelectric resonators that are opposed to each other and that are each coupled to respective corners of each of the first piezoelectric resonators. As such, each of the second piezoelectric resonators is partially disposed in the space defined between the pair of first piezoelectric resonators.

The invention concerns microelectromechanical resonators. In particular, the invention provides a resonator comprising a support structure, a doped semiconductor resonator suspended to the support structure by at least one anchor, and actuator for exciting resonance into the resonator. According to the invention, the resonator comprises a base portion and at least one protrusion extending outward from the base portion and is excitable by said actuator into a compound resonance mode having temperature coefficient of frequency (TCF) characteristics, which are contributed by both the base portion and the at least one protrusion. The invention enables simple resonators, which are very well temperature compensated over a wide temperature range.

An active type temperature compensation resonator structure is provided, including a resonant body and a temperature compensation element embedded in the resonant body for a compensation current to pass therethrough. The temperature compensation element has a specified temperature coefficient of resistance that reflects the temperature of the resonant body. The magnitude of the compensated current corresponds to the reflected temperature of the resonant body. With the active type temperature compensation resonator structure, the temperature of the resonant body can be accurately reacted by the specified temperature coefficient of resistance, such that the temperature compensation element, through which the compensated current passes, can dynamically correspond to the temperature of the resonant body and accurately provide the resonant body with temperature compensation.

A MEMS resonator is provided with a high quality factor and lower motional impedance. The MEMS resonator includes a silicon layer having opposing surfaces, a piezoelectric layer above one of the surfaces of the silicon layer, and a pair of electrodes disposed on opposing surfaces of the piezoelectric layer, respectively. Moreover, the piezoelectric layer has a crystallographic axis that extends at an angle relative to the vertical axis of the MEMS resonator.

A microelectromechanical system (MEMS) device includes a temperature compensating structure including a first beam suspended from a substrate and a second beam suspended from the substrate. The first beam is formed from a first material having a first Young's modulus temperature coefficient. The second beam is formed from a second material having a second Young's modulus temperature coefficient. The body may include a routing spring suspended from the substrate. The routing spring may be coupled to the first beam and the second beam. The routing spring may be formed from the second material. The first beam and the second beam may have lower spring compliance than the routing spring. The MEMS device may be a resonator and the temperature compensating structure may have dimensions and a location such that the temperature compensation structure modifies a temperature coefficient of frequency of the resonator independent of a mode shape of the resonator.

The invention concerns a micromechanical device and method of manufacturing thereof. The device comprises an oscillating or deflecting element made of semiconductor material comprising n-type doping agent and excitation or sensing means functionally connected to said oscillating or deflecting element. According to the invention, the oscillating or deflecting element is essentially homogeneously doped with said n-type doping agent. The invention allows for designing a variety of practical resonators having a low temperature drift.

The present description concerns a clock signal generation device (902) comprising: a microelectromechanical resonant element (504); and at least one nanoelectromechanical transduction element (512).

An example resonating structure comprises a substrate, a resonator body, and an anchoring body for anchoring the resonator body to the substrate. The resonator body is doped with a dopant having a concentration chosen so as to minimize a second order temperature coefficient of frequency for the resonator body. The resonator body is operable in an in-plane mode of vibration and an out-of-plane mode of vibration.

A mechanical resonator includes two identical plates, and a decoupling structure comprising at least two first connectors, each first connector connecting the decoupling structure to a respective one of the two identical plates, and an anchor disposed at a center of the decoupling structure. Each of the two identical plates may be a square plate adapted to resonate in Lam-mode. Further, each of the two identical plates may comprise a plurality of square plates, each square plate disposed next to one another. The decoupling structure further comprises a first ring connected to each of the two identical plates via a respective one of the at least two first connectors. The decoupling structure may further comprise a second ring connected to an inside of the first ring via at least two second connectors, wherein the anchor is disposed at a center of the second ring.