A microelectromechanical (MEMS) resonator includes a resonator structure having a plurality of beam elements and connection elements with certain geometry, where the plurality of beam elements are positioned adjacent to each other and adjacent beam elements are mechanically connected to each other by the connection elements, where the geometry of the beam elements or the connection elements varies within the resonator structure.

A radio frequency (RF) MEMS resonator is embedded in an active positive feedback loop to form a tunable RF channel-selecting radio transceiver employing a super-regenerative reception scheme. This transceiver harnesses the exceptionally high Q (around 100,000) and voltage-controlled frequency tuning of a resonator structure to enable selection of any one of among twenty 1 kHz wide RF channels over an 80 kHz range, while rejecting adjacent channels and consuming <490 W. Such transceivers are well suited to wireless sensor node applications, where low-power and simplicity trump transmission rate. Electrical stiffness-based frequency tuning also allows this same device to operate as a frequency shift keyed (FSK) transmitter, making a complete transceiver in one simple device. Finally, the geometric flexibility of resonator structure design should permit a large range of usable RF frequencies, from the presently demonstrated 60.6-MHz VHF, all the way up to UHF.

Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes.

A resonance device is provided with a reduced size and also suppresses the occurrence of deformation and breakage during operation. The resonance device includes a lower substrate, an upper substrate that defines a vibration space between the lower substrate and the upper substrate, a protruding portion that is formed on an inner surface of the lower or upper substrates. Moreover, a resonator is disposed in the vibration space and includes a base portion and vibration arms that extend in parallel to one another from the base portion along the inner surface of the lower substrate or the inner surface of the upper substrate and that vibrate in a vertical direction toward the inner surface of the lower substrate or the inner surface of the upper substrate.

A MEMS resonator includes a main substrate forming a receiving part at a center of the main substrate; a mass body having one end part and a center part elastically supported by both sides of the main substrate; a driving unit configured at one side of the receiving part on the main substrate and producing a driving torque by a voltage applied to both sides of the one end part of the mass body to move a position of the mass body with respect to the main substrate; and a tuning part including a pair of tuning units provided symmetrically with respect to the second elastic member, and having a beam member changing a length of the second elastic member by an actuating operation of each tuning unit to control a frequency.

A MEMS (microelectromechanical system) resonator assembly (100), comprising a support structure (102), a resonator element (101) suspended to the support structure (102), and an actuator for exciting the resonator element (101) to a resonance mode. The resonator element (101) vibrates at resonance frequency f.sub.0 and comprises at least one bulk acoustic resonator (110a, 110b). The ESR*A*f.sub.0 values of the resonator assembly (100) are in the range from 12 mm.sup.2 MHz to 83 mm.sup.2 MHZ.

A MEMS (microelectromechanical system) resonator assembly (100), comprising a support structure (102), a resonator element (101) suspended to the support structure (102), and an actuator for exciting the resonator element (101) to a resonance mode. The resonator element (101) comprises two bulk acoustic resonators (110a, 110b) and a flexural mode resonator (120). The flexural mode resonator (120) mechanically connects the two bulk acoustic resonators (110a, 110b), and the MEMS resonator assembly (100) is configured to vibrate in a collective resonance mode in which motions of the two bulk acoustic resonators (110a, 110b) are substantially in the same or 180 degrees shifted phase with respect to each other.

A resonator drive method is provided. The resonator drive method comprises: driving a third electrode that is higher than the first electrode and the second electrode based on an upper surface of the substrate, which are spaced apart from each other at a first interval on a substrate, to descend toward the substrate; and arranging the third electrode between the first electrode and the second electrode to be in contact with the upper surface of the substrate and arranging the first electrode, the second electrode, and the third electrode to be spaced apart from one another at a second interval, wherein the second interval is less than the first interval.

A radio frequency (RF) MEMS resonator is embedded in an active positive feedback loop to form a tunable RF channel-selecting radio transceiver employing a super-regenerative reception scheme. This transceiver harnesses the exceptionally high Q (around 100,000) and voltage-controlled frequency tuning of a resonator structure to enable selection of any one of among twenty 1 kHz wide RF channels over an 80 kHz range, while rejecting adjacent channels and consuming <490 W. Such transceivers are well suited to wireless sensor node applications, where low-power and simplicity trump transmission rate. Electrical stiffness-based frequency tuning also allows this same device to operate as a frequency shift keyed (FSK) transmitter, making a complete transceiver in one simple device. Finally, the geometric flexibility of resonator structure design should permit a large range of usable RF frequencies, from the presently demonstrated 60.6-MHz VHF, all the way up to UHF.

A micro-electromechanical system (MEMS) frequency divider apparatus having one or more MEMS resonators on a substrate is presented. A first oscillator frequency, as an approximate multiple of the parametric oscillation frequency, is capacitively coupled from a very closely-spaced electrode (e.g., 40 nm) to a resonant structure of the first oscillator, thus inducing mechanical oscillation. This mechanical oscillation can be coupled through additional MEMS resonators on the substrate. The mechanical resonance is then converted, in at least one of the MEMS resonators, by capacitive coupling back to an electrical signal which is a division of the first oscillation frequency. Output may be generated as a single ended output, or in response to a differential signal between two output electrodes.