In accordance with an embodiment, an RF system includes a transmit path having a first tunable transmit band stop filter, and a power amplifier coupled to an output of the first tunable transmit band stop filter, where the first tunable transmit band stop filter is configured reject a receive frequency and pass a transmit frequency; a receive path comprising an LNA; and a duplex filter having a transmit path port coupled to an output of the power amplifier, a receive path port coupled to an input of the LNA, and an antenna port, where the duplex filter is configured to pass the transmit frequency and reject the receive frequency between the antenna port and the transmit path port, pass the receive frequency and reject the transmit frequency between the antenna port and the receive path port.

Radio frequency (RF) acoustic wave resonator (AWR) filter circuits and methods. Embodiments essentially de-couple the stopband or notch characteristics of an RF filter from the passband characteristics. Accordingly, the de-coupled parameters can be individually designed to meet the specifications of a particular application. Partially-hybridized or fully-hybridized series-arm and parallel-arm AWR filter building blocks enable “de-coupled” RF filters having (1) wideband and low insertion loss passbands and (2) wideband deep notches (stopbands) with a specifically placed notch center frequency, without compromising the passband characteristics. The AWR filter building blocks include an inductance L that matches (resonates with) the electrostatic capacitance CO of the corresponding AWR within a desired passband. The resonance and anti-resonance frequencies of the building block AWRs are selected to be spaced apart from the specified passband in order to provide independent stopband or notch characteristics without substantially affecting the passband characteristics.

A bulk acoustic resonator includes: a substrate including an upper surface on which a substrate protection layer is disposed; and a membrane layer forming a cavity together with the substrate, wherein a thickness deviation of either one or both of the substrate protection layer and the membrane layer is 170 Å or less.

The invention relates to an acoustically coupled thin-film BAW filter, comprising a piezoelectric layer, an input-port on the piezoelectric layer changing electrical signal into an acoustic wave (SAW, BAW), and an output-port on the piezoelectric layer changing acoustic signal into electrical signal. In accordance with the invention the ports include electrodes positioned close to each other, and the filter is designed to operate in first order thickness-extensional TE1 mode.

Aspects of this disclosure relate to an acoustic wave filter that includes a series a bulk acoustic wave resonator having a plurality of anti-resonant frequencies that impact a passband of the acoustic wave filter. Related bulk acoustic wave resonators, radio frequency modules, wireless communication devices, and methods of filtering radio frequency signals are disclosed.

An acoustic resonator is fabricated by forming a patterned first photoresist mask on a piezoelectric plate at locations of a desired interdigital transducer (IDT) pattern. An etch-stop layer is then deposited on the plate and first photoresist mask. The first photoresist mask is removed to remove parts of the etch-stop and expose the plate. An IDT conductor material is deposited on the etch stop and the exposed plate. A patterned second photoresist mask is then formed on the conductor material at locations of the IDT pattern. The conductor material is then etched over and to the etch-stop to form the IDT pattern which has interleaved fingers on a diaphragm to span a substrate cavity. A portion of the plate and the etch-stop form the diaphragm. The etch-stop and photoresist mask are impervious to this etch. The second photoresist mask is removed to leave the IDT pattern.

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include temperature compensation layers (TCL) that improve the device TCF. These layers can be thin layers of oxide type materials and can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, between two or more piezoelectric layers, and any combination thereof. In an example, the TCLs can be configured from thick passivation layers overlying the top electrode and/or underlying the bottom electrode.

A wireless communication device includes a first transceiver operable according to a first radio technology and a second transceiver operable according to a second radio technology and operable concurrently with the first transceiver. The wireless communication device further includes an antenna configured to transmit radio transmissions of the second transceiver, and a filter circuit coupling the second transceiver with the antenna. The filter circuit includes a first frequency path and a second frequency path in parallel. The first frequency path passes a first set of frequencies of the radio transmissions and the second frequency path passes a second set of frequencies of the radio transmissions. One of the first frequency path or the second frequency path is configured to filter the radio transmissions of the second transceiver to remove signals corresponding to the one or more operating frequencies of the first transceiver from the radio transmissions of the second transceiver.

A micro-acoustic bandstop filter comprises a serial inductor (130) coupled between first and second ports (110, 120). A circuit block (140) coupled between the first and second port comprises at least one serial capacitance (141) and at least one shunt capacitance (142), wherein the serial and/or the shunt capacitance is realized by a micro-acoustic resonator (141). A shunt inductor (150) is coupled between the circuit block (140) and a terminal for a reference potential (160).

An acoustic resonator device includes a substrate and a piezoelectric plate. A first portion of the piezoelectric plate is on the substrate. A second portion of the piezoelectric forms a diaphragm suspended over a cavity in the substrate. An interdigital transducer (IDT) is on a surface of the piezoelectric plate, the IDT including first and second busbars on the first portion and interleaved IDT fingers on the diaphragm. A plurality of tethers support the diaphragm over the cavity, each tether providing an electrical connection between a corresponding one of the interleaved IDT fingers and one of the first and second busbars.