Adaptive RF filters based on modulated resonators are provided. The filter architecture is based on time-interleaved commutation of passive RF resonators. The architecture can behave as a two-port filter network, with a fully tunable instantaneous filter bandwidth. The filters are applicable as miniaturized, environment-aware RF signal processing components and can be used in mobile communications.

In certain aspects, a chip includes an acoustic resonator, and a mirror under the acoustic resonator. The mirror includes a first plurality of porous silicon layers, and a second plurality of porous silicon layers, wherein the mirror alternates between the first plurality of porous silicon layers and the second plurality of porous silicon layers, and each of the first plurality of porous silicon layers has a higher porosity than each of the second plurality of porous silicon layers.

A bulk acoustic wave (BAW) resonator includes a solidly mounted reflector, for example, a Bragg-type reflector, a piezoelectric layer, and first and second electrodes on first and second surfaces, respectively, of the piezoelectric layer. A filter device or filter system includes at least one BAW resonator. Related methods of fabrication include forming the BAW resonator.

Reversed semilattice filters with improved common mode rejection characteristics are disclosed. In one aspect, a filter may include two interior nodes coupled with an impedance that treats unwanted signals as common mode signals and provides rejection for common mode signals while passing differential signals of interest. The impedance is modified to have a resonant circuit that improves signal rejection in the stop band by lowering the effective impedance at those frequencies while leaving the pass band unaffected.

An apparatus is disclosed for a lattice-type filter. In example aspects, the apparatus includes a filter circuit having a first port that is single-ended and a second port that is single-ended. The filter circuit also includes a transformer, a first resonator, a second resonator, a third resonator, and a fourth resonator. The transformer includes a first terminal, a second terminal, and a third terminal, with the third terminal coupled to the second port. The first resonator is coupled between the first port and the first terminal of the transformer. The second resonator is coupled between the first port and the second terminal of the transformer. The third resonator is coupled between the first terminal of the transformer and a ground. The fourth resonator is coupled between the second terminal of the transformer and the ground.

An apparatus is disclosed for a bridge-type filter. In example aspects, the apparatus includes a filter circuit having a first port, a second port, and a filter core. The filter core is coupled between the first port and the second port. The filter core includes at least one transformer, a first resonator arrangement, and a second resonator arrangement. The first resonator arrangement is coupled to the at least one transformer and includes multiple acoustic resonators. The second resonator arrangement is coupled to the at least one transformer and includes multiple acoustic resonators.

A programmable acoustic filter circuit is provided. Herein, the programmable acoustic filter circuit can be dynamically controlled to toggle between two different passbands, such as different unlicensed national information infrastructure (UNII) bands. The programmable acoustic filter circuit includes an insertion element, a main filter, and a notch circuit. The insertion element is coupled in series with the main filter with very low insertion loss. Specifically, the notch circuit can be dynamically decoupled from the insertion element to thereby cause the main filter to pass a radio frequency (RF) signal in a main passband or be coupled to the insertion element to thereby cause the main filter to pass the RF signal in an alternative passband different from the main passband. As a result, it is possible to flexibly configure the programmable acoustic filter circuit to provide adequate out-of-band rejection with lowest possible insertion loss in various coexisting and concurrent operations.

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include a dielectric protection layer (DPL) that protects the piezoelectric layer from etching processes that can produce rough surfaces and reduces parasitic capacitance around the perimeter of the resonator when the DPL’s dielectric constant is lower than that of the piezoelectric layer. The DPL can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, or both.

An acoustic resonator is fabricated by forming a patterned first photoresist mask on a piezoelectric plate at locations of a desired interdigital transducer (IDT) pattern. An etch-stop layer is then deposited on the plate and first photoresist mask. The first photoresist mask is removed to remove parts of the etch-stop and expose the plate. An IDT conductor material is deposited on the etch stop and the exposed plate. A patterned second photoresist mask is then formed on the conductor material at locations of the IDT pattern. The conductor material is then etched over and to the etch-stop to form the IDT pattern which has interleaved fingers on a diaphragm to span a substrate cavity. A portion of the plate and the etch-stop form the diaphragm. The etch-stop and photoresist mask are impervious to this etch. The second photoresist mask is removed to leave the IDT pattern.

A resonator circuit device. This device can include a piezoelectric layer having a front-side electrode and a back-side electrode spatially configured on opposite sides of the piezoelectric layer. Each electrode has a connection region and a resonator region. Each electrode also includes a partial mass-loaded structure configured within a vicinity of its connection region. The front-side electrode and the back-side electrode are spatially configured in an anti-symmetrical manner with the resonator regions of both electrodes at least partially overlapping and the first and second connection regions on opposing sides. This configuration provides a symmetric acoustic impedance profile for improved Q factor and can reduce the issues of misalignment or unbalanced boundary conditions associated with conventional single mass-loaded perimeter configurations.