Patent classifications
H03K3/0233
SEMICONDUCTOR INTEGRATED CIRCUIT AND SEMICONDUCTOR STORAGE DEVICE
A semiconductor integrated circuit of an embodiment includes: a delay element array circuit in which a plurality of delay elements having a delay amount Tw are connected in series; a flip-flop group including a plurality of flip-flops each of which an input is connected to an output of a corresponding delay element; a delay element group configured to generate, from an input clock signal, a plurality of output clock signals each having a delay difference of a second delay amount smaller than the delay amount Tw; and a delay unit configured to set a third delay amount smaller than the second delay amount, and the delay element group and the delay unit are connected in series between an output terminal of an input signal CLK_DET and an input terminal of the flip-flop group.
SEMICONDUCTOR INTEGRATED CIRCUIT AND SEMICONDUCTOR STORAGE DEVICE
A semiconductor integrated circuit of an embodiment includes: a delay element array circuit in which a plurality of delay elements having a delay amount Tw are connected in series; a flip-flop group including a plurality of flip-flops each of which an input is connected to an output of a corresponding delay element; a delay element group configured to generate, from an input clock signal, a plurality of output clock signals each having a delay difference of a second delay amount smaller than the delay amount Tw; and a delay unit configured to set a third delay amount smaller than the second delay amount, and the delay element group and the delay unit are connected in series between an output terminal of an input signal CLK_DET and an input terminal of the flip-flop group.
REFRESH CIRCUIT, REFRESH METHOD AND SEMICONDUCTOR MEMORY
A refresh circuit includes: a signal generation module, configured to generate an inversion signal and a carry signal based on a refresh command; an adjustment unit, configured to generate, if a first refresh signal and a second refresh signal are generated based on the refresh command, an inversion adjustment signal according to the inversion signal, and generate, if only the first refresh signal is generated based on the refresh command, the inversion adjustment signal according to an inversion signal corresponding to a first refresh signal generated based on a current refresh command, and generate the inversion adjustment signal only according to an inversion signal corresponding to a second refresh signal generated based on a next refresh command; and a counting module, configured to generate a first output signal and a second output signal, and invert the first output signal based on the inversion adjustment signal.
REFRESH CIRCUIT, REFRESH METHOD AND SEMICONDUCTOR MEMORY
A refresh circuit includes: a signal generation module, configured to generate an inversion signal and a carry signal based on a refresh command; an adjustment unit, configured to generate, if a first refresh signal and a second refresh signal are generated based on the refresh command, an inversion adjustment signal according to the inversion signal, and generate, if only the first refresh signal is generated based on the refresh command, the inversion adjustment signal according to an inversion signal corresponding to a first refresh signal generated based on a current refresh command, and generate the inversion adjustment signal only according to an inversion signal corresponding to a second refresh signal generated based on a next refresh command; and a counting module, configured to generate a first output signal and a second output signal, and invert the first output signal based on the inversion adjustment signal.
Hysteresis comparator, semiconductor device, and power storage device
To provide a hysteresis comparator having a small circuit area and low power consumption. The hysteresis comparator includes a comparator, a switch, a first capacitor, a second capacitor, and a logic circuit. A first terminal of the switch is electrically connected to one of a pair of conductive regions of the first capacitor, one of a pair of conductive regions of the second capacitor, and a first input terminal of the comparator. An output terminal of the comparator is electrically connected to an input terminal of the logic circuit. An output terminal of the logic circuit is electrically connected to the other of the pair of conductive regions of the second capacitor. The logic circuit has a function of generating an inverted signal of a signal input to the input terminal of the logic circuit and outputting the inverted signal to the output terminal of the logic circuit. A reference potential is input to the first input terminal of the comparator and the reference potential is held by the switch. Due to change in the potential of the output terminal of the comparator, the reference potential is changed by capacitive coupling of the second capacitor.
Cyclic control of cells of an integrated circuit
An embodiment of the present disclosure relates to a circuit of cyclic activation of an electronic function comprising a hysteresis comparator controlling the charge of a capacitive element powering the function.
CLOCK GENERATION CIRCUIT AND LATCH USING SAME, AND COMPUTING DEVICE
A clock generation circuit, a latch using same, and a computing device are provided. The clock generation circuit includes an input end, configured to input a pulse signal; a first output end, configured to output a first clock signal; a second output end, configured to output a second clock signal; and an input drive circuit, a latch circuit, an edge shaping circuit, a feedback delay circuit, and an output drive circuit, where the input drive circuit, the latch circuit, the edge shaping circuit, the feedback delay circuit, and the output drive circuit are sequentially connected between the input end and the first output end as well as the second output end in series. A clock pulse can be effectively shaped, the use of a clock buffer can be reduced, and the correctness and accuracy of data transmission and latching can be improved.
CLOCK GENERATION CIRCUIT AND LATCH USING SAME, AND COMPUTING DEVICE
A clock generation circuit, a latch using same, and a computing device are provided. The clock generation circuit includes an input end, configured to input a pulse signal; a first output end, configured to output a first clock signal; a second output end, configured to output a second clock signal; and an input drive circuit, a latch circuit, an edge shaping circuit, a feedback delay circuit, and an output drive circuit, where the input drive circuit, the latch circuit, the edge shaping circuit, the feedback delay circuit, and the output drive circuit are sequentially connected between the input end and the first output end as well as the second output end in series. A clock pulse can be effectively shaped, the use of a clock buffer can be reduced, and the correctness and accuracy of data transmission and latching can be improved.
SPIKE SUPPRESSION CIRCUIT AND POWER CONVERTER AND CONTROL METHOD THEREOF
A spike suppression circuit includes a wide bandgap transistor, a first transistor, a clamping circuit, and a capacitor. The wide bandgap transistor is depletion-type. The first transistor is coupled in series with the wide bandgap transistor. The clamping circuit provides a voltage difference, and is coupled to a common node between the wide bandgap transistor and the first transistor. The capacitor provides a supply voltage for the clamping circuit. When the first transistor is turned off, the capacitor can recycle spike energy at the common node.
Cell of transmission gate free circuit and integrated circuit layout including the same
A semiconductor standard cell of a flip-flop circuit includes semiconductor fins extending substantially parallel to each other along a first direction, electrically conductive wirings disposed on a first level and extending substantially parallel to each other along the first direction, and gate electrode layers extending substantially parallel to a second direction substantially perpendicular to the first direction and formed on a second level different from the first level. The flip-flop circuit includes transistors made of the semiconductor fins and the gate electrode layers, receives a data input signal, stores the data input signal, and outputs a data output signal indicative of the stored data in response to a clock signal, the clock signal is the only clock signal received by the semiconductor standard cell, and the data input signal, the clock signal, and the data output signal are transmitted among the transistors through at least the electrically conductive wirings.