Patent classifications
H03K3/0233
Low power single retention pin flip-flop with balloon latch
Systems, apparatuses, and methods for implementing a low-power, single-pin retention flip-flop with a balloon latch are described. A flip-flop is connected to a retention latch to store a value of the flip-flop during a reduced power state. A single retention pin is used to turn on the retention latch. During normal mode, the retention latch is pre-charged and a change in the value stored by the flip-flop does not cause the retention latch to toggle. This helps to reduce the power consumed by the circuit during normal mode (i.e., non-retention mode). When the retention signal becomes active, the retention latch gets triggered and the value stored by the flip-flop is written into the retention latch. Later, if the flip-flop is powered down and then powered back up while the circuit is in retention mode, the value in the retention latch gets written back into the flip-flop.
Level shifter system and capacitive-coupled level shifter
A capacitive-coupled level shifter includes a capacitive divider circuit having a first capacitive divider branch configured to couple a first input terminal to a first comparator terminal and a second capacitive divider branch configured to couple a second input terminal to a second comparator terminal. The first capacitive divider branch and the second capacitive divider branch are symmetric so as to cancel out a common mode voltage of a modulated signal input to the capacitive divider circuit. A level shifter system which includes the capacitive-coupled level shifter is also described.
High-speed digital logic circuit for SAR_ADC and sampling adjustment method
The present disclosure belongs to the technical field of analog or digital-analog hybrid integrated circuits, and relates to a high-speed SAR_ADC digital logic circuit, in particular to a high-speed digital logic circuit for SAR_ADC and a sampling adjustment method. The digital logic circuit includes a comparator, a logic control unit parallel to the comparator, and a capacitor array DAC. The comparator and the logic control unit are simultaneously triggered by a clock signal. The comparator outputs a valid comparison result Dp/Dn, the logic control unit outputs a corresponding rising edge signal, the rising edge signal is slightly later than Dp/Dn output by the comparator through setting a delay match, Dp/Dn is captured by the corresponding rising edge signal, thereby settling a capacitor array. The present disclosure eliminates the disadvantage of the improper settling of the capacitor array of the traditional parallel digital logic.
High-speed digital logic circuit for SAR_ADC and sampling adjustment method
The present disclosure belongs to the technical field of analog or digital-analog hybrid integrated circuits, and relates to a high-speed SAR_ADC digital logic circuit, in particular to a high-speed digital logic circuit for SAR_ADC and a sampling adjustment method. The digital logic circuit includes a comparator, a logic control unit parallel to the comparator, and a capacitor array DAC. The comparator and the logic control unit are simultaneously triggered by a clock signal. The comparator outputs a valid comparison result Dp/Dn, the logic control unit outputs a corresponding rising edge signal, the rising edge signal is slightly later than Dp/Dn output by the comparator through setting a delay match, Dp/Dn is captured by the corresponding rising edge signal, thereby settling a capacitor array. The present disclosure eliminates the disadvantage of the improper settling of the capacitor array of the traditional parallel digital logic.
Multi-level drive data transmission circuit and method
The disclosed multi-level driving data transmission circuit and operating method include: a first driving module including a first signal generating unit and a first three-state driver, and a second driving module, including a second three-state driver. The first input terminal of the second three-state driver is coupled to the output terminal of the first three-state driver. The first signal generating unit includes a first and second input terminals, and an output terminal. The output terminal of the first signal generating unit couples to the second input terminal of the first three-state driver. The first signal generating unit receives the first signal through its first input terminal and the first feedback signal of the first signal from the second driving module through its second input terminal. The resultant first control signal has an effective signal width wider than the first signal. The first control signal inputs to the first three-state driver.
Multi-level drive data transmission circuit and method
The disclosed multi-level driving data transmission circuit and operating method include: a first driving module including a first signal generating unit and a first three-state driver, and a second driving module, including a second three-state driver. The first input terminal of the second three-state driver is coupled to the output terminal of the first three-state driver. The first signal generating unit includes a first and second input terminals, and an output terminal. The output terminal of the first signal generating unit couples to the second input terminal of the first three-state driver. The first signal generating unit receives the first signal through its first input terminal and the first feedback signal of the first signal from the second driving module through its second input terminal. The resultant first control signal has an effective signal width wider than the first signal. The first control signal inputs to the first three-state driver.
Semiconductor device including differential input circuit and calibration method thereof
According to an embodiment, a semiconductor device includes a differential input circuit suitable for receiving first and second input signals respectively inputted to first and second input transistors, and outputting an output signal; a comparison circuit suitable for generating a first judge signal by comparing the output signal with a first comparison voltage, and generating a second judge signal by comparing the output signal with a second comparison voltage, in a calibration mode; an offset control circuit suitable for adjusting coarse codes and fine codes, according to the first and second judge signals; and an offset adjusting circuit suitable for adjusting a drivability of each of the first and second input transistors by a first strength, according to the coarse codes, and adjusting the drivability of each of the first and second input transistors by a second strength smaller than the first strength, according to the fine codes.
Refresh circuit and refresh method of a semiconductor memory having a signal generation module configured to generate an inversion signal and carry signals based on a refresh command; an adjustment unit to generate an inversion adjustment signal according to the inversion
A refresh circuit includes: a signal generation module, configured to generate an inversion signal and a carry signal based on a refresh command; an adjustment unit, configured to generate, if a first refresh signal and a second refresh signal are generated based on the refresh command, an inversion adjustment signal according to the inversion signal, and generate, if only the first refresh signal is generated based on the refresh command, the inversion adjustment signal according to an inversion signal corresponding to a first refresh signal generated based on a current refresh command, and generate the inversion adjustment signal only according to an inversion signal corresponding to a second refresh signal generated based on a next refresh command; and a counting module, configured to generate a first output signal and a second output signal, and invert the first output signal based on the inversion adjustment signal.
Refresh circuit and refresh method of a semiconductor memory having a signal generation module configured to generate an inversion signal and carry signals based on a refresh command; an adjustment unit to generate an inversion adjustment signal according to the inversion
A refresh circuit includes: a signal generation module, configured to generate an inversion signal and a carry signal based on a refresh command; an adjustment unit, configured to generate, if a first refresh signal and a second refresh signal are generated based on the refresh command, an inversion adjustment signal according to the inversion signal, and generate, if only the first refresh signal is generated based on the refresh command, the inversion adjustment signal according to an inversion signal corresponding to a first refresh signal generated based on a current refresh command, and generate the inversion adjustment signal only according to an inversion signal corresponding to a second refresh signal generated based on a next refresh command; and a counting module, configured to generate a first output signal and a second output signal, and invert the first output signal based on the inversion adjustment signal.
Semiconductor integrated circuit and semiconductor storage device
A semiconductor integrated circuit of an embodiment includes: a delay element array circuit in which a plurality of delay elements having a delay amount Tw are connected in series; a flip-flop group including a plurality of flip-flops each of which an input is connected to an output of a corresponding delay element; a delay element group configured to generate, from an input clock signal, a plurality of output clock signals each having a delay difference of a second delay amount smaller than the delay amount Tw; and a delay unit configured to set a third delay amount smaller than the second delay amount, and the delay element group and the delay unit are connected in series between an output terminal of an input signal CLK_DET and an input terminal of the flip-flop group.