A delay circuit includes precharge and discharge transistors configured to receive an input signal. The delay circuit also includes a resistor coupled to the precharge transistor having a negative temperature coefficient to thereby form a node. A capacitive device and an inverter are coupled to the node. The inverter produces an output signal. Responsive to the input signal having a first polarity, the precharge transistor is configured to be turned on and the discharge transistor is configured to be turned off to thereby cause current to flow through the precharge transistor to the capacitive device to thereby charge the capacitive device. Responsive to the input signal having a second polarity, the precharge and discharge transistors are configured to change state to thereby cause charge from the capacitive device to discharge through the resistor and through the discharge transistor. The voltage on the node decays to a level which eventually causes the inverter's output to change state.

A die-to-die data transmitter is disclosed with a pull-up one-shot circuit and a pull-down one-shot circuit, each forming a delay circuit that determines a variable preemphasis period.

The present disclosure provides a power clamp device. The power clamp device includes a delay element, a first transistor, a second transistor, and a gate control circuit. The delay element has an input terminal and an output terminal. The first transistor has a gate electrically connected to the output terminal of the delay element. The second transistor has a source electrically connected to a drain of the first transistor. The gate control circuit has a first terminal electrically connected to the input terminal of the delay element, a second terminal electrically connected to the output terminal of the delay element, and a third terminal electrically connected to a gate of the second transistor.

A line driver for signal equalization is described. The line driver may comprise an equalization driver and a gating circuit. The gating circuit may be configured to gate the equalization driver between a first transition and a second transition, such as between a rising edge and a falling edge. The gating circuit may comprise one or more delay elements, such as one or more inverters, configured to generate the second transition in response to receiving the first transition, where the second transition is delayed with respect to the first transition. Such line driver may be used to signals having high data rates to transmission lines, such as cables or metal connection on printed circuit boards.

A charge pump circuit includes a first charge pump unit and a second charge pump unit. The first charge pump unit pumps an input voltage to output a first pumped voltage according to a first clock signal, a second clock signal and a third clock signal. The second charge pump unit pumps the first pumped voltage to output a second pumped voltage according to the first clock signal, a fourth clock signal and the third clock signal. The first clock signal and the third clock signal are non-overlapping clock signals. A falling edge of the second clock signal leads a rising edge of the first clock signal. A falling edge of the fourth clock signal leads a rising edge of the third clock signal.

An integrated circuit includes a plurality of power rail pairs and a circuit chain. Each of the plurality of power rail pairs includes one of a plurality of high power rails configured to provide a first power supply voltage and one of a plurality of low power rails configured to provide a second power supply voltage that is lower than the first power supply voltage. The circuit chain includes a plurality of unit circuits that are cascade-connected such that an output of a previous unit circuit is provided as an input of a next unit circuit. The plurality of unit circuits are connected distributively to the plurality of power rail pairs.

A delay line circuit includes: a coarse-tuning arrangement, including delay units; and a fine-tuning arrangement including at least three serially-connected inverters. The coarse-tuning arrangement is configured to receive an input signal and coarsely-tune the input signal, the coarsely-tuning including transferring the input signal through a selected number of the delay units and thereby producing a first output signal. The fine-tuning arrangement is configured to receive the first output signal, finely-tune the first output signal, and produce a second output signal, the finely-tuning including selectively connecting a speed control unit to a node between a corresponding pair of the at least three serially-connected inverters.

In described examples of an integrated circuit (IC), an oscillator includes Schmitt trigger delay cells connected in a ring topology. The Schmitt trigger delay cells have a high input threshold approximately equal to Vdd and a low input threshold approximately equal to Vss to increase delay through each cell. An output buffer receives a phase signal from an output terminal of one of the Schmitt trigger delay cells and converts a transition phase signal to a faster transition clock signal. The output buffer has control circuitry that generates non-overlapping control signals in response to the phase signal, to control an output stage to generate the fast transition clock signal while preventing short circuit current in the output stage.

A non-volatile memory (NVM) includes a fin structure, a first fin field effect transistor (FinFET), a second FinFET, an antifuse structure, a third FinFET, and a fourth FinFET. The antifuse structure is formed on the fin structure and has a sharing gate, a single diffusion break (SDB) isolation structure, a first source/drain region, and a second source/drain region. The SDB isolation structure isolates the first source/drain region and the second source/drain region. The first FinFET, the second FinFET and the first antifuse element compose a first one time programmable (OTP) memory cell, and the third FinFET, the fourth FinFET and the second antifuse element compose a second OTP memory cell. The first OTP memory cell and the second OTP memory cell share the antifuse structure.

A delay circuit is provided. The delay circuit includes a voltage-generation circuit and a signal-generation circuit. The voltage-generation circuit receives an input signal and generates a first control voltage and a second control voltage. The signal-generation circuit is controlled by the first control voltage and a second control voltage to generate an output signal. A first delay time by which a falling edge of the output signal is delayed from a falling edge of the output signal is determined by the first control voltage. A second delay time by which a rising edge of the output signal is delayed from a rising edge of the output signal is determined by the second control voltage.