Pulse train conditioning circuits and related methods are disclosed. An example circuit includes a first transistor having a first current terminal and a first gate terminal, a second transistor having a second current terminal and a second gate terminal, a third transistor having a third current terminal and a third gate terminal, a fourth transistor having a fourth current terminal and a fourth gate terminal, the fourth gate terminal coupled to the first through third gate terminals, a first switch having first through third terminals, the first terminal coupled to the first current terminal, the second terminal coupled to the third current terminal, and the third terminal coupled to the fourth current terminal, and a second switch having fourth through sixth terminals, the fourth terminal coupled to the second current terminal, the fifth terminal coupled to the third current terminal, and the sixth terminal coupled to the fourth current terminal.

Delay circuit includes: first to fourth transistors; capacitor; constant current source; and resistor. The first transistor has a gate connected to an input terminal, a source connected to the first power supply terminal, and a drain. The second transistor has a gate connected to an input terminal and the gate of the first transistor, a drain connected to the drain of the first transistor and the second terminal of the capacitor, and a source. The third transistor has a gate connected to a node between the drain of the first transistor, the drain of the second transistor, and the second terminal of the capacitor, a source connected to the second power supply terminal, and a drain. The fourth transistor has a gate connected to the node and the gate of the third transistor, a drain connected to the drain of the third transistor and an output terminal, and a source.

A delay circuit and a delay structure are provided. The circuit includes: a first delay unit configured to delay a rising edge and/or a falling edge of a pulse signal, where, an input terminal of the first delay unit receives the pulse signal, and an output terminal of the first delay unit outputs a first delay signal, and a second delay unit, configured to delay the first delay signal, where an input terminal of the second delay unit is connected to the output terminal of the first delay unit, and an output terminal of the second delay unit outputs a second delay signal.

A reconfigurable all-digital temperature sensor includes a NAND gate and several delay units, the NAND gate comprises two input terminals and an output terminal, one input terminal is used for external starting control signal; a plurality delay units are connected in series, the input end of the first delay unit is connected to the output terminal of the NAND gate, and the output end of the last delay unit is connected to another input terminal of the NAND gate, thereby forming a ring oscillator structure; each delay unit includes a leakage-based inverter and a Schmitt trigger, and the output end of the leakage-based inverter is connected to the input end of the Schmitt trigger. The reconfigurable all-digital temperature sensor can realize the conversion of temperature-leakage-frequency based on the ring oscillator structure in the temperature range of −40˜125° C., thereby reducing the design complexity and achieving high accuracy.

A delay cell includes a cascode transistor and an inverter. The cascode transistor is used to receive a control voltage to generate a bias current, and includes a source terminal, a drain terminal, and a gate terminal receiving the control voltage. The inverter is coupled to the cascode transistor and used to generate an output signal according to the bias current in response to an input signal.

A method of generating precise and PVT-stable time delay or frequency using CMOS circuits is disclosed. In some implementations, the method includes providing a reference voltage using a resistive module at a positive input terminal of an operational amplifier, coupling gates of a pair of p-type metal oxide semiconductor (pMOS) transistors and a compensation capacitor to an output terminal of the operational amplifier to generate a first bias signal, and coupling a pair of n-type metal oxide semiconductor (nMOS) transistors to a negative terminal of the operational amplifier to generate a second bias signal at the negative terminal, wherein the pair of nMOS transistors is substantially the same as a pair of nMOS transistors in the CMOS delay circuit.

Pulse train conditioning circuits and related methods are disclosed. An example circuit includes a first transistor having a first current terminal and a first gate terminal, a second transistor having a second current terminal and a second gate terminal, a third transistor having a third current terminal and a third gate terminal, a fourth transistor having a fourth current terminal and a fourth gate terminal, the fourth gate terminal coupled to the first through third gate terminals, a first switch having first through third terminals, the first terminal coupled to the first current terminal, the second terminal coupled to the third current terminal, and the third terminal coupled to the fourth current terminal, and a second switch having fourth through sixth terminals, the fourth terminal coupled to the second current terminal, the fifth terminal coupled to the third current terminal, and the sixth terminal coupled to the fourth current terminal.

A delay line includes first to n-th delay cells and a dummy delay cell, ‘n’ being an integer greater than or equal to 3. The first to n-th delay cells sequentially delay an input signal to respectively generate first to n-th output signals. The dummy delay cell delays the n-th output signal based on a delay control voltage to generate a dummy output signal. A delay amount of each of the first to (n−1)-th delay cells is adjusted on a basis of the delay control voltage and the output signal of the delay cell of a next stage of the corresponding delay cell, and a delay amount of the n-th delay cell is adjusted on a basis of the delay control voltage and the dummy output signal.

A semiconductor apparatus may include logic circuits and a control logic. The control logic may be configured to monitor characteristics of the logic circuits to allow the semiconductor apparatus to perform at different operating speeds.

A delay line includes first to n-th delay cells and a dummy delay cell, n being an integer greater than or equal to 3. The first to n-th delay cells sequentially delay an input signal to respectively generate first to nth output signals. The dummy delay cell delays the n-th output signal based on a delay control voltage to generate a dummy output signal. A delay amount of each of the first to (n1)-th delay cells is adjusted on a basis of the delay control voltage and the output signal of the delay cell of a next stage of the corresponding to delay cell, and a delay amount of the nth delay cell is adjusted on a basis of the delay control voltage and the dummy output signal.