A semiconductor device includes a test clock generation circuit, a test data generation circuit, and a control code generation circuit. The test clock generation circuit delays a clock signal based on a delay selection signal in a test mode to generate a test clock signal. The test data generation circuit delays data to generate test data. The control code generation circuit latches the test data based on the delay selection signal and the test clock signal to generate a control code.

A semiconductor device includes a test clock generation circuit, a test data generation circuit, and a control code generation circuit. The test clock generation circuit delays a clock signal based on a delay selection signal in a test mode to generate a test clock signal. The test data generation circuit delays data to generate test data. The control code generation circuit latches the test data based on the delay selection signal and the test clock signal to generate a control code.

A method for controlling a load-current zero-crossing of a switching regulator having a high-side switch and a low-side switch includes detecting, by a spike detection circuit, a presence of a spike on an output voltage of the switching regulator, determining, by the spike detection circuit, in the event that a spike is present, whether the spike is a positive spike or a negative spike, and adjusting a turn-off timing of the low-side switch based on a determination result.

A method for controlling a load-current zero-crossing of a switching regulator having a high-side switch and a low-side switch includes detecting, by a spike detection circuit, a presence of a spike on an output voltage of the switching regulator, determining, by the spike detection circuit, in the event that a spike is present, whether the spike is a positive spike or a negative spike, and adjusting a turn-off timing of the low-side switch based on a determination result.

A control device for a switching voltage regulator having a high-side switch and a low-side switch to supply a switching voltage to a load includes a comparator configured to compare the switching voltage with a reference voltage to provide an enable signal to the low-side switch, and a spike detection circuit configured to receive the switching voltage and output an offset control signal to execute a time shift to the enable signal.

A controlled transconductance circuit (CTC) is disclosed. The CTC includes (i) a transistor comprising a drain terminal, a gate terminal, and a transistor source terminal, (ii) a biasing circuit element connected between the transistor source terminal and a CTC source terminal, and a variable capacitor connected between the transistor source terminal and a constant voltage terminal where the constant voltage terminal is adapted to receive a constant voltage, and (iii) a CTC control terminal adapted to control a transconductance of the CTC by controlling a capacitance of the variable capacitor.

The disclosure is directed to a simple, inexpensive circuit to extract the complementary metal-oxide-semiconductor (CMOS) threshold voltage (Vt) from an integrated circuit. The threshold voltage may be used elsewhere in the circuit for a variety of purposes. One example use of threshold voltage is to sense the temperature of the circuit. The CMOS Vt extraction circuit of this disclosure includes a current mirror and an arrangement of well-matched transistors and resistors that takes advantage of the square law equation. The structure of the circuit may make it well suited to applications that benefit from low-power radiation hardened circuits.

The disclosure is directed to a simple, inexpensive circuit to extract the complementary metal-oxide-semiconductor (CMOS) threshold voltage (Vt) from an integrated circuit. The threshold voltage may be used elsewhere in the circuit for a variety of purposes. One example use of threshold voltage is to sense the temperature of the circuit. The CMOS Vt extraction circuit of this disclosure includes a current mirror and an arrangement of well-matched transistors and resistors that takes advantage of the square law equation. The structure of the circuit may make it well suited to applications that benefit from low-power radiation hardened circuits.

A controlled transconductance circuit (CTC) is disclosed. The CTC includes (i) a transistor comprising a drain terminal, a gate terminal, and a transistor source terminal, (ii) a biasing circuit element connected between the transistor source terminal and a CTC source terminal, and a variable capacitor connected between the transistor source terminal and a constant voltage terminal where the constant voltage terminal is adapted to receive a constant voltage, and (iii) a CTC control terminal adapted to control a transconductance of the CTC by controlling a capacitance of the variable capacitor.

The present disclosure relates to a delay control circuit arranged for adding delay to a signal. The delay control circuit includes a driver circuit arranged to receive a first signal and to output a second signal. The driver circuit includes a variable load arranged for outputting the second signal by adding delay to the first signal. The delay control circuit also includes a control circuit arranged to receive the first signal and to control the variable load of the driver circuit based on a current state of the first signal and on a control signal indicative of an amount of delay to be added to the first signal in the current state.