A semiconductor apparatus includes a control circuit and a level shifter. The control circuit is configured to output a power control signal for activating a data input/output circuit operated by a first voltage when the first voltage is higher than a first set voltage and a second voltage is higher a second set voltage. The level shifter configured to receive the power control signal and lower operating voltages of devices including a plurality of transistors with a thin gate insulating layer based on the power control signal.

A voltage-glitch detection and protection circuit and method are provided. Generally, circuit includes a voltage-glitch-detection-block (GDB) and a system-reset-block coupled to the GDB to generate a reset-signal to cause devices in a chip including the circuit to be reset when a voltage-glitch in a supply voltage (VDD) is detected. The GDB includes a voltage-glitch-detector coupled to a latch. The voltage-glitch-detector detects the voltage-glitch and generates a PULSE to the system-reset-block and latch. The latch receives the PULSE and generates a PULSE_LATCHED signal to the system-reset-block to ensure the reset-signal is generated no matter a width of the PULSE. In one embodiment, the latch includes a filter and a sample and hold circuit to power the latch, and ensure the PULSE_LATCHED signal is coupled to the system-reset-block when a voltage to the GDB or to the latch drops below a minimum voltage due to the voltage-glitch.

A comparator configured to calibrate an offset according to a control signal, including an input circuit configured to receive a first input signal and a second input signal, and to generate a first internal signal corresponding to the first input signal and a second internal signal corresponding to the second input signal; a differential amplification circuit configured to consume a supply current flowing from a positive voltage node having a positive supply voltage to a negative voltage node having a negative supply voltage, and to generate an output signal by amplifying a difference between the first internal signal and the second internal signal; and a current valve configured to adjust at least a portion of the supply current based on the control signal.

A semiconductor device that enables a memory size reduction is provided. The semiconductor device includes a converter circuit, a memory circuit, and a detection circuit. The converter circuit has a function of converting first data that includes a digital voltage value to second data that includes an analog current value. The memory circuit has a function of storing third data that includes an analog current value. The detection circuit has a function of generating data that indicates whether the analog current values of the second and third data match.

A comparator includes a comparison circuit and a positive feedback circuit. The comparison circuit generates a comparison signal by comparing an input signal and a reference signal. The positive feedback circuit generates an output signal based on the comparison signal, such that the output signal transitions more rapidly than the comparison signal. The positive feedback circuit includes a first circuit configured to electrically connect a first power supply voltage to a conversion node in response to a transition of the comparison signal and electrically disconnect the first power supply voltage from the conversion node in response to a transition of the output signal, a second circuit configured to electrically connect a second power supply voltage to the conversion node in response to the transition of the output signal, and an output circuit configured to generate the output signal based on a voltage of the conversion node.

An embodiment electronic device includes a first circuit including first and second transistors series-coupled between a node of application of a power supply voltage and a node of application of a reference voltage, the first and second transistors being coupled to each other by a first node, and a second circuit, configured to compare a first voltage on the first node with first and second voltage thresholds.

A comparator circuit having an offset voltage includes a first input circuit, a second input circuit and a control circuit. The first input circuit includes a first input terminal receiving a first input signal. The second input circuit includes a second input terminal receiving a second input signal. The control circuit is coupled to a first intermediate terminal and a second intermediate terminal and resets a voltage at the first intermediate terminal and a voltage at the second intermediate terminal according to an offset cancellation voltage. The first intermediate terminal is coupled between the first input terminal and a first output terminal of the comparator circuit, the second intermediate terminal is coupled between the second input terminal and a second output terminal of the comparator circuit, and the first intermediate terminal and the second intermediate terminal are symmetric terminals in the comparator circuit.

Technologies are generally described for an array of logic elements effective to generate a data signal. A first logic element may include an input circuit, a comparator circuit, and a state machine. The input circuit may receive a first input state signal and a second input state signal from a second logic element and a third logic element, respectively. The input circuit may determine a sum based on the first and second input state signals. The comparator circuit may compare the sum with a threshold and, in response, may generate an intermediate signal based on the comparison. The state machine may identify a current state of the first logic element. The state machine may generate an output state signal based on the intermediate signal and the current state of the first logic element. The output state signal may indicate a subsequent state of the first logic element.

This document discusses, among other things, a voltage comparator, an integrated circuit, or a voltage comparison method having increased precision. The hysteresis comparator or the integrated circuit can include first and second input transistors, each having a gate configured to receive a respective first or second input voltage. A bias power source can generate a bias current to a first node by applying a voltage through a first resistor. The first node can be connected to a source of the first input transistor through a second resistor and to a source of the second input transistor through a third resistor. The first, second, and third resistors can include the same type of resistor, with the second and third resistors having different resistance values.

A semiconductor device comprising: a substrate having: a first terminal region; a second terminal region; a first extension region that extends from the first terminal region towards the second terminal region; a second extension region that extends from the second terminal region towards the first terminal region; a channel region between the first and second extension regions; a gate conductor that overlies the channel region of the substrate, the gate conductor configured to control conduction in the channel region; a first control conductor that overlies at least a portion of the first extension region, the first control conductor configured to control conduction in the first extension region; and a second control conductor that overlies at least a portion of the second extension region, the second control conductor configured to control conduction in the second extension region, wherein the first and second control conductors are electrically isolated within the semiconductor device from the gate conductor.