An electrostatic discharge circuit may include a control voltage generation circuit, an electrostatic detection circuit, a driving control circuit and a discharge driving circuit. The control voltage generation circuit may generate first to third control voltages through a division operation on a supply voltage. The electrostatic detection circuit may set a first setup voltage based on the first control voltage, and detect static electricity transferred through the first setup voltage. The driving control circuit may set a second setup voltage based on the second control voltage, and generate a driving control signal. The discharge driving circuit may set a third setup voltage based on the third control voltage, and perform a discharge operation on static electricity.

The present disclosure provides an electrostatic protection circuit and an electronic device. The electrostatic protection circuit is connected to a first end point and a second end point of a power device. The electrostatic protection circuit is configured to allow bilateral electrostatic protection between the first end point and the second end point of the power device. The power device includes a transverse high-electron-mobility transistor (HEMT).

A semiconductor device and a method for a method for manufacturing a semiconductor device are provided. The semiconductor device comprises a core transistor having a drain configured to receive a first voltage, and a first dummy device connected to the drain of the core transistor, the first dummy device having a first dummy transistor and a second dummy transistor. Wherein a gate and a source of the first dummy transistor are connected to each other. Wherein a drain of the second dummy transistor is connected to the source of the first dummy transistor. Wherein a gate of the second dummy transistor is connected to the drain of the core transistor.

A radio frequency (RF) switch is provided. The RF switch is configured to switch a RF signal input to a first terminal. The RF switch includes a first transistor, disposed at a first distance from the first terminal, and configured to switch the RF signal, and a second transistor, disposed at a second distance from the first terminal, and configured to switch the RF signal. The first distance is shorter than the second distance, and a number of first contact vias formed in a first electrode in the first transistor is greater than a number of second contact vias formed in a second electrode of the second transistor.

The present disclosure relates to a semiconductor circuit breaker and, more specifically, to a semiconductor circuit breaker in which a protection circuit is modularized and thus maintenance and repair can be easily done. A semiconductor circuit breaker according to an embodiment of the present disclosure comprises: a main circuit unit connected between a power source and a load and having a semiconductor switch; an outer box equipped with the main circuit unit and having a module accommodation unit outside thereof; and a protection module detachably accommodated in the module accommodation unit.

In a described example, an apparatus includes: a first metal oxide semiconductor field effect transistor (MOSFET) coupled between a first input terminal for receiving a supply voltage and an output terminal for coupling to a load, and having a first gate terminal; an enable terminal coupled to the first gate terminal for receiving an enable signal; a first current mirror coupled between the first input terminal and a first terminal of a first series resistor and having an input coupled to the first gate terminal; and a second MOSFET coupled between the first gate terminal and the output terminal, and having a second gate terminal coupled to the first terminal of the first series resistor, the first series resistor having a second terminal coupled to the output terminal.

A process tests an operability of a circuit breaker device (18, 20, 34) to establish/sever a connection of two circuit areas (36, 38, 40, 42). The circuit breaker device includes a MOSFET (44) with a source terminal (46) connected with a circuit area, a drain terminal (48) connected with a circuit area, and a gate terminal (50) with a gate voltage applied by an associated gate driver device (52) to switch into a connection switching state connecting the two circuit areas during a connection phase. The gate voltage is monitored during the connection phase, a base voltage being applied to the source terminal or/and to the drain terminal during the connection phase is monitored. If a difference between the gate voltage and the base voltage falls below a predefined reference difference during the connection phase, it is determined that a circuit defect is present in the MOSFET.

A GaN half bridge circuit is disclosed. The circuit includes a bootstrap power supply voltage generator is configured to supply a first power voltage and includes a switch node. The circuit also includes a bootstrap transistor, a bootstrap transistor drive circuit, and a bootstrap capacitor connected to the switch node and to the bootstrap transistor. The bootstrap capacitor is configured to supply the first power voltage while the voltage at the switch node is equal to the second switch node voltage, the bootstrap transistor is configured to electrically connect the bootstrap capacitor to a power node at a second power voltage while the voltage at the switch node is equal to the first switch node voltage, and the bootstrap power supply voltage generator does not include a separate diode in parallel with the drain and source of the bootstrap transistor.

During an ON period of a high breakdown voltage switch provided within an ON period of a semiconductor switching element, a detection circuit outputs to a predetermined node a voltage obtained by dividing an inter-terminal voltage by a plurality of resistor elements. A voltage comparison circuit outputs a detection signal indicating whether or not the inter-terminal voltage is greater than a predetermined determination voltage based on a comparison between the voltage of the predetermined node and a predetermined DC voltage. The high breakdown voltage switch has a breakdown voltage greater than a potential difference between a high potential and a low potential during an OFF period.

Provided is a semiconductor device which can operate stably even in the case where a transistor thereof is a depletion transistor. The semiconductor device includes a first transistor for supplying a first potential to a first wiring, a second transistor for supplying a second potential to the first wiring, a third transistor for supplying a third potential at which the first transistor is turned on to a gate of the first transistor and stopping supplying the third potential, a fourth transistor for supplying the second potential to the gate of the first transistor, and a first circuit for generating a second signal obtained by offsetting a first signal. The second signal is input to a gate of the fourth transistor. The potential of a low level of the second signal is lower than the second potential.