A circuit for reducing collector-emitter voltage (V.sub.CE) overshoot in an insulated gate bipolar transistor (IGBT) is provided. The circuit includes circuitry operable to generate a pulse which has a rising edge synchronized to the moment when collector or emitter current of the IGBT begins to fall during turn-off of the IGBT and a width which is a fraction of a duration of the V.sub.CE overshoot. The circuitry is further operable to combine the pulse with a control signal applied to a gate of the IGBT so as to momentarily raise the gate voltage of the IGBT during turn-off of the IGBT to above a threshold voltage of the IGBT for the duration of the pulse. A corresponding method of reducing V.sub.CE overshoot in an IGBT also is provided.

Systems, circuits, and methods for operating an Insulated-Gate Bipolar Transistor (IGBT) are provided. A circuit is to include a first driver for the IGBT, the first driver having a first resistance and being connectable to the gate of the IGBT. The circuit is further described to include a second driver for the IGBT, the second driver having a second resistance different from the first resistance and also being connectable to the gate of the IGBT. The circuit is also described to include a controller that receives at least two inputs regarding operating characteristics of the IGBT and based on the at least two inputs decides whether to connect the first or second driver to the gate of the IGBT during power-down of the IGBT.

Circuits for providing overcurrent and overvoltage protection are disclosed herein. The circuits feature a depletion mode MOSFET (D MOSFET) as a current limiter, the D MOSFET being connected to a bi-metallic switch, where the bi-metallic switch acts as a temperature sensing circuit breaker. In combination, the D MOSFET and bi-metallic switch are able to limit current to downstream circuit components, thus protecting the components from damage.

An isolation disconnect assembly for an insulated gate bipolar transistor assembly is provided. The isolation disconnect assembly includes a conductor assembly and a clinch joint magnetic actuator.

An object of the present invention is to improve assemblability of a power semiconductor device. A power semiconductor device includes a plurality of submodules that includes a semiconductor element interposed between a source conductor and a drain conductor, a sense wiring that transmits a sense signal of the semiconductor element, and an insulating portion at which the sense wiring and the sense conductor are arranged, and a source outer conductor that is formed to surround the source conductor and is joined to the source conductor in each of the plurality of submodules. Each source conductor included in the plurality of submodules includes protrusion portions that are formed toward the sensor wiring from the source conductor, are connected to the sense wiring, and define a distance between the sense wiring and the source outer conductor.

A drive device adapted to drive a semiconductor power device, wherein the drive device comprises a drive circuit comprising a first terminal adapted for connection to a first terminal of the power device, a gate terminal adapted to provide a driving signal for a gate terminal of the power device, a sensor for detecting overvoltage conditions at the first terminal of the power device, and wherein the drive circuit is adapted to modify the driving signal when the sensor detects an indication of an overvoltage condition, and wherein the drive circuit including the sensor is integrated onto a single substrate.

A drive circuit Dr for a switch that reduces a surge voltage caused when a switch SW is switched to an off state. The drive circuit Dr detects, as an on voltage Von, a collector-emitter voltage of the switch SW while the switch SW is in an on state. When the detected on voltage Von is large, the drive circuit Dr sets a resistance value Rd of a discharging resistor 53 when the switch SW is switched to an off state to be larger than the resistance value Rd when the detected on voltage Von is small. More specifically, the drive circuit Dr sets the resistance value Rd to a larger value as the detected on voltage Von is increased.

A semiconductor module including a semiconductor element which is bonded to a wiring pattern part and connects or disconnects two main electrode terminals to or from each other according to a drive signal applied to a gate electrode terminal, includes a deterioration detecting circuit configured to use one main electrode terminal of the two main electrode terminals of the semiconductor element with an applied DC voltage, as a reference potential, and detect deterioration of a joining part of the semiconductor element on the basis of a gate voltage which is the voltage between the one main electrode terminal and the gate electrode terminal and an inter-main-electrode voltage which is the voltage between the one main electrode terminal and the other main electrode terminal, and outputs an alarm signal.

An integrated circuit comprises a power switch comprising a current path and a current sense node; and a temperature sense circuit internally coupled between the current path and the current sense node.

Circuits for providing overcurrent and overvoltage protection are disclosed herein. The circuits feature a depletion mode MOSFET (D MOSFET) as a current limiter, the D MOSFET being connected to a bi-metallic switch, where the bi-metallic switch acts as a temperature sensing circuit breaker. In combination, the D MOSFET and bi-metallic switch are able to limit current to downstream circuit components, thus protecting the components from damage.