An electronic protection switch includes first and second network terminals and two semiconductor switches of same kind. Each semiconductor switch is formed by an IGBT semiconductor switch and includes a switching element and a diode which is arranged antiparallel to the switching element. A first of the two semiconductor switches is arranged without a semiconductor series connection between a positive potential terminal of the first network terminal and a positive potential terminal of the second network terminal. A second of the two semiconductor switches is arranged without a semiconductor series connection between a negative potential terminal of the first network terminal and a negative potential terminal of the second network terminal. The switching element of each semiconductor switch is arranged so as to be able to conduct and switch off a current from the first network terminal to the second network terminal.

A method for protecting a system including a driver integrated circuit includes receiving a driver input signal. The method includes driving an output signal externally to the driver integrated circuit. The output signal is driven based on the driver input signal and an indication of a delay between receipt of an edge of the driver input signal and arrival of a corresponding edge of the output signal at an output node coupled to a terminal of the driver integrated circuit.

A control circuit includes a detection module configured to detect an operating condition of a semiconductor switching device; a determining module configured to determine a gate allowable voltage of the semiconductor switching device based on the operating condition; and an output module configured to output a control signal to a driving power supply circuit of the semiconductor switching device based on the gate allowable voltage, to control the driving power supply circuit to provide a gate on voltage that is not higher than the gate allowable voltage and that is positively correlated with the gate allowable voltage for the semiconductor switching device. When the operating condition of the semiconductor switching device becomes better, the gate allowable voltage of the semiconductor switching device is increased.

A test circuit for testing a switching device. The test circuit includes: a first terminal for receiving a drive signal; second, third and fourth terminals respectively coupled to a ground electrode, a control electrode and a power-supply electrode, of the switching device; and a clamping circuit coupled between the second terminal and the fourth terminal. The clamping circuit is configured to, upon turning on of the switching device responsive to the drive signal, cause a voltage at the third terminal to be a first voltage higher than a threshold of the switching device, and, upon turning off of the switching device responsive to the drive signal, cause the voltage at the third terminal to be a third voltage between the threshold and the first voltage, while clamping a voltage at the fourth terminal to a second voltage lower than a withstand voltage of the switching device.

Various embodiments include a DC switch for disconnecting a DC line. The switch may include: a power semiconductor switch arranged in a current path of the DC line; a first sensor for measuring the input and output voltages; a second sensor for measuring the current flowing through the DC line; and a controller for the power semiconductor switch. The control device is configured to: switch on the DC switch for a first time period; determine the input voltage present; determine the output voltage present at the end of the first time period; determine the current intensity present at the end of the first time period; and determine an inductance and/or capacitance from the determined values.

A semiconductor drive device includes a drive circuit that drives a semiconductor switching element, a passive element connected to a gate of the semiconductor switching element to prevent a gate current of the semiconductor switching element, a switching element connected in series to the passive element, a control circuit that controls the switching element, and a temperature detection circuit that detects a temperature of the semiconductor switching element. The control circuit controls the switching element such that when the temperature detected by the temperature detection circuit is high, the gate current is prevented more than when the temperature is low.

A turn-off circuit for a semiconductor switch includes an element having a variable resistance coupled to a control input of the semiconductor switch, a circuit for generating a control-input reference signal, and a control circuit coupled to adjust a resistance of the element having a variable resistance in response to the control-input reference signal in a closed control loop in order to turn off the semiconductor switch.

A drive device for a voltage-controlled semiconductor element. The drive device includes: a short-circuit current detection circuit which detects a short-circuit current flowing through the voltage-controlled semiconductor element; a timer circuit which outputs a time setting signal indicative of a determined time, responsive to the short-circuit current detection circuit detecting the short-circuit current; and a control power source voltage variable circuit which receives a power supply voltage applied to the drive device, decreases the power supply voltage for a period for which the control power source voltage variable circuit receives the time setting signal from the timer circuit, to thereby obtain a stepped-down voltage, and outputs the stepped-down voltage as a control power source voltage.

A gate driver to control a high-power switching device is disclosed. The gate driver includes a multifunction pin that allows the gate driver to be controlled by a multifunction signal to perform a number of different functions. For example, a level of the multifunction signal at the multifunction pin can enable/disable the output of the gate driver. In another example, a level of the multifunction signal that is held for a period while the gate driver is in a fault state can reset the state of the gate driver. In another example, pulsing the multifunction signal a number of times can activate a test of the fault detection capabilities of the gate driver. Utilizing one pin for this control, simplifies circuit complexity for communication between a controller and the gate driver, thereby reducing cost and increasing reliability.

The present application provides a power device driver including a detection module coupled to the power device and configured to detect the state of the power device; a driving module coupled to the detection module and the power device respectively and configured to detect the power of the detection module. As a result, the power device is regulated; wherein the detection module includes a fast detection sub-module configured to detect a state of the power device within a preset time period after the input signal of the driving device is invalid, and controlling the driving module to softly turn off the power device when there is overcurrent. The present application also provides a corresponding power device driving method and electric equipment.