A solid-state relay having favorable electrical characteristics is provided. The solid-state relay includes a first circuit and a second circuit. The first circuit includes a first light-emitting element. The second circuit includes a first light-receiving element, a memory, and a first switch. The memory includes a second switch. The second switch includes a second semiconductor layer. The first switch and the first light-emitting element are formed using a first semiconductor layer. The first semiconductor layer and the second semiconductor layer contain gallium, and the second semiconductor layer further contains oxygen. On or off of the first light-emitting element is controlled by a first signal supplied to the first circuit. First data, which is generated when the first light-receiving element converts light emitted by the first light-emitting element into voltage, is supplied to the memory. Conduction or non-conduction of the first switch is controlled by the first data stored in the memory.

An electric machine with variable torque generation having a tunable Halbach array configuration. The electric machine includes a magnet assembly for generating a magnetic field. The magnet assembly includes a plurality of fixed magnets disposed in a ring arrangement so that fixed magnets having a north pole faced toward the rotor or stator are alternated with fixed magnets having a south pole faced toward the rotor or stator, a plurality of rotatable magnets disposed within a respective slot formed between two adjacent fixed magnets, a drive assembly for turning the rotatable magnets within the slots to vary the magnetic field generated by the magnet assembly in the rotor or stator, the drive assembly configured to turn the rotatable magnets between a first position wherein the magnetic field in the rotor or stator is augmented and a second position wherein the magnetic field in the rotor or stator is cancelled.

A semiconductor device includes: a P-side driving circuit and an N-side driving circuit respectively driving a P-side switching device and an N-side switching device which are connected to configure a half bridge; and a N-side power supply generation circuit generating a power supply voltage for the N-side driving circuit from a power supply voltage for the P-side switching device.

The circuit breaker control module of the present disclosure comprises: a plurality of semiconductor switching units for blocking current flows of transmission distribution lines or performing switching operations so as to switch the current flow directions; a control unit for controlling the turn-on/turn-off operation of each semiconductor switching unit by transmitting a trip signal to each of the plurality of semiconductor switching units; and a plurality of insulation type signal transmission element units which are provided between the plurality of semiconductor switching units and the control unit such that the semiconductor switching units and the control unit are insulated, and which transmit the trip signal from the control unit to each of the plurality of semiconductor switching units, and thus the presently disclosed circuit breaker control module can reduce the risk of accidents due to an electrical arc and increase the stability and reliability of the control unit.

A system and method for high speed switching comprises receiving voltage inputs at a bridge rectifier, generating a control signal from a transistor, and driving a gate of a field effect transistor (FET) via the control signal of the transistor, wherein a source of the FET is connected to a negative output of the bridge rectifier and a drain of the FET is connected to a positive output of the bridge rectifier through a load. The system and method further comprises limiting current flowing to the gate of the FET through first and second resistors and first and second diodes connecting the voltage inputs to the gate of the FET and limiting voltage to the gate of the FET below a maximum voltage rating of the FET by a Zener diode connected to the gate of the FET.

A system and method for high speed switching comprises receiving voltage inputs at a bridge rectifier, generating a control signal from a transistor, and driving a gate of a field effect transistor (FET) via the control signal of the transistor, wherein a source of the FET is connected to a negative output of the bridge rectifier and a drain of the FET is connected to a positive output of the bridge rectifier through a load. The system and method further comprises limiting current flowing to the gate of the FET through first and second resistors and first and second diodes connecting the voltage inputs to the gate of the FET and limiting voltage to the gate of the FET below a maximum voltage rating of the FET by a Zener diode connected to the gate of the FET.

A photorelay of an embodiment includes a polyimide substrate having a first surface and a second surface on an opposite side of the polyimide substrate from the first surface, the polyimide substrate having a thickness equal to or more than 10 μm and equal to or less than 120 μm, an input terminal provided on the second surface, an output terminal provided on the second surface, a light receiving element provided on the first surface, a light emitting element provided on the light receiving element, and a MOSFET provided on the first surface.

A photorelay of an embodiment includes a polyimide substrate having a first surface and a second surface on an opposite side of the polyimide substrate from the first surface, the polyimide substrate having a thickness equal to or more than 10 μm and equal to or less than 120 μm, an input terminal provided on the second surface, an output terminal provided on the second surface, a light receiving element provided on the first surface, a light emitting element provided on the light receiving element, and a MOSFET provided on the first surface.

A drive circuit for a power semiconductor circuit may include input contact means for inputting a control signal, the control signal representing a switching command for the power semiconductor circuit, and also at least one output contact means, to which the power semiconductor circuit is connectable and which serves for outputting a switching signal to the power semiconductor circuit. Furthermore, the drive circuit comprises current path connection means for connecting the drive circuit to a current path to be switched by the power semiconductor circuit, and means for galvanically isolating the input contact means from the output contact means and the current path connection means. Circuit means which output a switching signal that switches on the power semiconductor circuit if a control signal representing the switch-on command for the power semiconductor circuit is input at the input contact means and also voltage is present at the current path connection means.

A drive circuit for a power semiconductor circuit may include input contact means for inputting a control signal, the control signal representing a switching command for the power semiconductor circuit, and also at least one output contact means, to which the power semiconductor circuit is connectable and which serves for outputting a switching signal to the power semiconductor circuit. Furthermore, the drive circuit comprises current path connection means for connecting the drive circuit to a current path to be switched by the power semiconductor circuit, and means for galvanically isolating the input contact means from the output contact means and the current path connection means. Circuit means which output a switching signal that switches on the power semiconductor circuit if a control signal representing the switch-on command for the power semiconductor circuit is input at the input contact means and also voltage is present at the current path connection means.