A semiconductor relay module includes first to third semiconductor relays, first to third input terminals, first to third output terminals, a first connection line, and a first monitor terminal connected to the first connection line. A first input circuit of the first semiconductor relay and a second input circuit of the second semiconductor relay are connected to the first and second input terminals. A third input circuit of the third semiconductor relay is connected to the first or second input terminal and the third input terminal. A first output circuit of the first semiconductor relay is connected to the first output terminal and the first connection line. A second output circuit of the second semiconductor relay is connected to the second output terminal and the first connection line. A third output circuit of the third semiconductor relay is connected to the third output terminal and the first connection line.

A photocoupler of an embodiment includes a packaging member, a first and a second MOSFET, a semiconductor light receiving element, a semiconductor light emitting element, a first wiring part, and a sealing resin layer. The input terminal includes a first and a second lead. The output terminal includes a third and a fourth lead. The first conductive region includes a signal input part and a bend part. The fourth conductive region includes a signal input part and a bend part. The semiconductor light receiving element is joined to the first and second MOSFETs astride a gap part. The semiconductor light emitting element is joined onto a light receiving region. The first wiring part connects the source electrode of the first MOSFET and the source electrode of the second MOSFET.

A photorelay of an embodiment includes a polyimide substrate having a first surface and a second surface on an opposite side of the polyimide substrate from the first surface, the polyimide substrate having a thickness equal to or more than 10 μm and equal to or less than 120 μm, an input terminal provided on the second surface, an output terminal provided on the second surface, a light receiving element provided on the first surface, a light emitting element provided on the light receiving element, and a MOSFET provided on the first surface.

A photorelay of an embodiment includes a polyimide substrate having a first surface and a second surface on an opposite side of the polyimide substrate from the first surface, the polyimide substrate having a thickness equal to or more than 10 μm and equal to or less than 120 μm, an input terminal provided on the second surface, an output terminal provided on the second surface, a light receiving element provided on the first surface, a light emitting element provided on the light receiving element, and a MOSFET provided on the first surface.

An electric machine having a housing with a stator chamber, an axle supported by at least one bearing assembly so that the axle may rotate with respect to the housing, a stator assembly with a stator core and a plurality of wire windings around the stator core, a rotor assembly with a magnet assembly for generating a magnetic field in the stator assembly wherein a coolant is circulated through the stator chamber over the stator core and plurality of wire windings to remove heat, and a plurality of thermoelectric devices. The thermoelectric devices are located around the inner circumference of the housing so that the coolant is circulated over the plurality of thermoelectric devices. The plurality of thermoelectric use the Peltier effect to cool the coolant flowing through the stator chamber or generate an electrical current that can be used by the electric machine.

An) electric machine with variable torque generation having a tunable Halbach array configuration. The electric machine includes a magnet assembly for generating a magnetic field. The magnet assembly includes a plurality of fixed magnets disposed in a ring arrangement so that fixed magnets having a north pole faced toward the rotor or stator are alternated with fixed magnets having a south pole faced toward the rotor or stator, a plurality of rotatable magnets disposed within a respective slot formed between two adjacent fixed magnets, a drive assembly for turning the rotatable magnets within the slots to vary the magnetic field generated by the magnet assembly in the rotor or stator, the drive assembly configured to turn the rotatable magnets between a first position wherein the magnetic field in the rotor or stator is augmented and a second position wherein the magnetic field in the rotor or stator is cancelled.

A cascade MosFet circuit design for variable gear switching using pulse width modulation (PWM) between electronic gears to achieve a smooth transition is disclosed. In an embodiment, in the system, there can be three separate stages of two or more switches from very low amperage to hundreds of amps that can be automatically selected within a chosen stage. The automatic switching can be programmed to be power (e.g., current) sensitive or can be both power and electronic gear sensitive as to cascade into the right MosFet combination for different gear settings and still select greater values for varying power levels. Such a smooth transition can allow the generator or motor using such cascade MosFet circuit design to operate more efficiently and/or more quietly.

A system and method for high speed switching comprises receiving voltage inputs at a bridge rectifier, generating a control signal from a transistor, and driving a gate of a field effect transistor (FET) via the control signal of the transistor, wherein a source of the FET is connected to a negative output of the bridge rectifier and a drain of the FET is connected to a positive output of the bridge rectifier through a load. The system and method further comprises limiting current flowing to the gate of the FET through first and second resistors and first and second diodes connecting the voltage inputs to the gate of the FET and limiting voltage to the gate of the FET below a maximum voltage rating of the FET by a Zener diode connected to the gate of the FET.

A system and method for high speed switching comprises receiving voltage inputs at a bridge rectifier, generating a control signal from a transistor, and driving a gate of a field effect transistor (FET) via the control signal of the transistor, wherein a source of the FET is connected to a negative output of the bridge rectifier and a drain of the FET is connected to a positive output of the bridge rectifier through a load. The system and method further comprises limiting current flowing to the gate of the FET through first and second resistors and first and second diodes connecting the voltage inputs to the gate of the FET and limiting voltage to the gate of the FET below a maximum voltage rating of the FET by a Zener diode connected to the gate of the FET.

To suppress a leakage current flowing through a parasitic capacitor of an insulated transformer of a high-side insulated power. The present invention suppresses a common mode current using a common mode reactor by focusing on the fact that a leakage current flowing through a parasitic capacitor of an insulated transformer of a high-side insulated power source resulting from a high-frequency signal generated due to an on/off operation of a high-side switching element is the common mode current. The common mode reactor reduces the common mode current and bears the high-frequency signal to prevent the high-frequency signal from being applied to the insulated transformer of the high-side insulated power source, suppress the leakage current flowing through the parasitic capacitor of the insulated transformer, and reduce an erroneous operation of the high-side switching element generated due to the leakage current flowing through the parasitic capacitor of the insulated transformer.