Patent classifications
H03K19/00338
Fault resilient flip-flop with balanced topology and negative feedback
The disclosure relates to a latch including a first inverter with a first pair of field effect transistors (FETs) configured with a first channel width to length ratio (W/L), and a second inverter with a second pair of FETs configured with a second W/L different than the first W/L. Another latch includes first and second inverters; a first negative feedback circuit including first and second FETs coupled between first and second voltage rails, the input of the first inverter coupled between the first and second FETs, and the first and second FETs including gates coupled to an output of the first inverter; and a second negative feedback circuit including third and fourth FETs coupled between the first and second voltage rails, the input of the second inverter coupled between the third and fourth FETs, and the third and fourth FETs including gates coupled to an output of the second inverter.
TRIPLE MODULAR REDUNDANCY FLIP-FLOP WITH IMPROVED POWER PERFORMANCE AREA AND DESIGN FOR TESTABILITY
A triple modular redundancy (TMR) flip-flop includes a set of master-gate-latch circuits including a first set of inputs to receive a first digital signal, and a second set of inputs to receive a clock; and a voting logic circuit including a set of inputs coupled to a set of outputs of the set of master-gate-latch circuits, and an output to generate a second digital signal based on the first digital signal. Another TMR flip-flop includes a set of master-gate-latch circuits to receive a set of digital signals in response to a first edge of a clock, respectively; and latch the set of digital signals in response to a second edge of the clock, respectively; and a voting logic circuit to receive the latched set of digital signals; and generate a second digital signal based on a majority of logic levels of the latched first set of digital signals, respectively.
Triple modular redundancy flip-flop with improved power performance area and design for testability
A triple modular redundancy (TMR) flip-flop includes a set of master-gate-latch circuits including a first set of inputs to receive a first digital signal, and a second set of inputs to receive a clock; and a voting logic circuit including a set of inputs coupled to a set of outputs of the set of master-gate-latch circuits, and an output to generate a second digital signal based on the first digital signal. Another TMR flip-flop includes a set of master-gate-latch circuits to receive a set of digital signals in response to a first edge of a clock, respectively; and latch the set of digital signals in response to a second edge of the clock, respectively; and a voting logic circuit to receive the latched set of digital signals; and generate a second digital signal based on a majority of logic levels of the latched first set of digital signals, respectively.
RADIATION-HARDENED D FLIP-FLOP CIRCUIT
A flip-flop and latch circuit is disclosed. The circuit includes a single-input inverter, a dual-input inverter, a single-input tri-state inverter, a dual-input tri-state inverter, and two single-event transient (SET) filters. The single-input tri-state inverter receives an input signal D. The dual-input tri-state inverter includes a first input, a second input and an output, wherein the first input receives output signals from the dual-input inverter and the second input receives output signals from the dual-input inverter via the first SET filter. The output of the dual-input tri-state inverter sends output signals to a first input of the dual-input inverter and a second input of the dual-input inverter via the second SET filter. The single-input inverter receives inputs from the dual-input inverter to provide an output signal Q for the circuit
Radiation-hardened D flip-flop circuit
A flip-flop circuit is disclosed. The flip-flop circuit includes a single-input inverter, a dual-input inverter, a single-input tri-state inverter, a dual-input tri-state inverter, and two single-event transient (SET) filters. The single-input tri-state inverter receives an input signal D. The dual-input tri-state inverter includes a first input, a second input and an output, wherein the first input receives output signals from the dual-input inverter and the second input receives output signals from the dual-input inverter via the first SET filter. The output of the dual-input tri-state inverter sends output signals to a first input of the dual-input inverter and a second input of the dual-input inverter via the second SET filter. The single-input inverter receives inputs from the dual-input inverter to provide an output signal Q for the flip-flop circuit.
CIRCUIT, METHOD FOR SIZING AN ASPECT RATIO OF TRANSISTORS OF A CIRCUIT, AND CIRCUIT ARRANGEMENT
According to embodiments of the present invention, a circuit is provided. The circuit includes a first set of transistors configured to receive one or more input signals provided to the circuit, and a second set of transistors electrically coupled to each other, wherein the second set of transistors is configured to provide one or more output signals of the circuit, wherein the first set of transistors and the second set of transistors are electrically coupled to each other, and wherein, for each transistor of the first set of transistors and the second set of transistors, the transistor is configured to drive a load associated with the transistor and has an aspect ratio that is sized larger than an aspect ratio of a transistor that is optimized for driving the load.
CIRCUIT ARRANGEMENTS AND METHODS FOR FORMING THE SAME
A circuit arrangement is provided, having a first circuit configured to receive an input signal, and a second circuit configured to provide an output signal, wherein the first circuit includes a first pull-up network having a first transistor of a first conductivity type and a second transistor of a second conductivity type electrically coupled to each other, and a first pull-down network having a first transistor of the first conductivity type and a second transistor of the second conductivity type electrically coupled to each other, wherein the second circuit includes a second pull-up network having a first transistor of the first conductivity type, and a second pull-down network having a second transistor of the second conductivity type, wherein the first pull-up network and the second pull-down network are electrically coupled to each other, and wherein the first pull-down network and the second pull-up network are electrically coupled to each other.
Circuit and method of forming the same
According to embodiments of the present invention, a circuit is provided. The circuit includes forming a first electrical device having a first region of a first conductivity type, forming a second electrical device having a second region of a second conductivity type, and electrically coupling the first region and the second region to each other, wherein one of the first and second regions is arranged to at least substantially surround the other of the first and second regions. According to further embodiments of the present invention, a method of forming a circuit is also provided.
Implementing dynamic SEU detection and correction method and circuit
A method and a circuit for implementing dynamic single event upset (SEU) detection and correction, and a design structure on which the subject circuit resides are provided. The circuit implements detection, correction and scrubbing of unwanted state changes due to SEUs, noise or other event in semiconductor circuits. The circuit includes a plurality of L1 L2 latches connected in a chain, each L1 L2 latch includes an L1 latch and an L2 latch with the L2 latch having a connected output monitored for a flip. A single L2 detect circuit exclusive OR (XOR) is connected to each L2 latch. An L2 detect circuit XOR tree includes an input connected to a true output of a respective L2 latch in the chain. An L2 clock (LCK) trigger circuit is connected to an output of the L2 detect circuit XOR tree and is shared across each of the plurality of L1 L2 latches for correcting bit flip errors.
SEMICONDUCTOR INTEGRATED CIRCUIT WITH RADIATION RESISTANCE
According to an embodiment, a semiconductor integrated circuit includes a signal processing circuit with a first transistor and a second transistor connected in series, and a third transistor. The signal processing circuit is supplied with power from a power source, and receives a first input signal at control terminals of the first transistor and the second transistor, and execute signal processing based on the first input signal to output an output signal. The third transistor is provided between the signal processing circuit and a ground potential and receives a second input signal at a control terminal of the third transistor, the second input signal obtained by level-shifting the first input signal and thereby having a smaller signal amplitude than a signal amplitude of the first input signal, and be turned on or off based on the second input signal.