A CMOS output circuit includes a first P-MOSFET having a source connected to a power supply terminal, a drain connected to an output terminal, and a back gate connected to a first potential terminal; a first N-MOSEFET having a drain connected to the output terminal, a source connected to the ground terminal, and a back gate connected to a second potential terminal; a first potential switching portion arranged to switch whether to connect the first potential terminal to the power supply terminal or to the output terminal; a second potential switching portion arranged to switch whether to connect the second potential terminal to the ground terminal or to the output terminal; a first gate switching portion arranged to switch whether or not to short-circuit the gate of the first P-MOSFET to the first potential terminal; a second gate switching portion arranged to switch whether or not to short-circuit the gate of the first N-MOSFET to the second potential terminal; a first driver arranged to drive the gate of the first P-MOSFET in accordance with a first input signal; a second driver arranged to drive the gate of the first N-MOSFET in accordance with a second input signal; and a control portion arranged to control individual portions of the circuit when turning off both the first P-MOSFET and the first N-MOSFET, so as to connect the first potential terminal to one of the power supply terminal and the output terminal, which has a higher potential, to connect the second potential terminal to one of the ground terminal and the output terminal, which has a lower potential, to short-circuit the gate of the first P-MOSFET to the first potential terminal, and to short-circuit the gate of the first N-MOSFET to the second potential terminal.

A block of logic gates has MOS transistors whose body terminals are connected with a body voltage rail and whose source terminals are connected with a logic reference voltage rail. The logic reference voltage rail is connected to the body voltage rail via a resistor. The resistor creates a negative feedback loop for leakage currents that stabilizes a reverse body bias voltage and reduces the influence of temperature, voltage, and process variations.

The block may be NMOS, PMOS, or CMOS. In the case of CMOS, there are two body voltage rails, powered by a voltage source, two logic reference voltage rails, and two resistors. The reverse body bias voltages over the two resistors may be stabilized by decoupling capacitors. The two resistors may be trimmable. The resistors may be calibrated such that leakage currents are at a minimum value and the logic gates can switch just fast enough.

A slew rate detection circuit connected to a sensor detects when an analog electrical signal from the sensor indicates a slew rate that exceeds a threshold value, and generates an interrupt electrical signal when the slew rate is detected as exceeding the threshold value. A control circuit determines a measurement value of the physical property in response to receiving the interrupt signal. The control circuit is connected to an A/D converter, which converts the analog electrical signal into a digital electrical signal, and performs a plurality of sensing system operations including determining the measurement value of the physical property as a function of the digital electrical signal.

Driver circuits to invert an input signal and to generate an output signal based on the inverted input signal are presented. The voltage level of the logical high value of the output signal is adjustable. The driver circuit has a high side switching element coupled between a supply terminal and the output terminal of the driver circuit. The driver circuit has a low side switching element coupled between the output terminal of the driver circuit and a reference potential. The driver circuit has a regulation transistor, wherein a controlled section of the regulation transistor is coupled in series with the high side switching element and the low side switching element between the supply terminal and the reference potential. The driver circuit has a feedback circuit to regulate the output voltage by generating a regulation voltage at a control terminal of the regulation transistor.

Push-pull integrated circuit output drivers may interfere with communication by other entities on a bus when an integrated circuit is powered down. When there is no power and/or when the bonding pad is externally driven above the internal supply voltage, the substrate/body/well of the p-channel field effect transistor (PFET) of the output driver is biased to prevent its drain diode from becoming forward biased thereby preventing interference with communication on the bus. Also, when there is no power, driver is powered down or pull up is disabled, the gate of the driver PFET is driven to a voltage that ensures the driver PFET remains off when the bonding pad is externally driven above the internal supply voltage.

An electronic device may include one or more output buffers each including a pair of final p-channel metal oxide semiconductor (PMOS) and n-channel metal oxide semiconductor (NMOS) transistors, a first pre-buffer to drive the PMOS transistor, and a second pre-buffer to drive the NMOS transistor. Each output buffer receives power from a pre-buffer supply filtering circuit, which may include a supply capacitor for stabilizing supply voltage, a low-pass first pre-buffer supply filter to filter the voltage supplied to the first pre-buffer, and a low-pass second pre-buffer supply filter the voltage supplied to the second pre-buffer.

The application relates to a shift register unit and a driving method thereof, a shift register circuit and a display apparatus. The shift register unit may include a gate starting terminal, a first clock terminal, a second clock terminal, a reset terminal, a low level terminal, a gate output terminal, a storage capacitor, a charging module, an output control module and a reset module. In the shift register according to the present application, since the reset operation is under control of the second transistor and the fifth transistor both, an improper reset operation will not occur, even if the signal at the reset terminal is unstable.

A buffer circuit includes a first differential amplifier, second differential amplifier, third differential amplifier, and mixer. The first differential amplifier generates a positive differential signal and a negative differential signal based on an input signal and a reference voltage signal. The second differential amplifier generates a first signal based on the positive differential signal and the negative differential signal. The third differential amplifier generates a second signal having a different phase from the first signal based on the positive differential signal and the negative differential signal. The mixer outputs a signal, generated by mixing the first signal and the second signal, as an output signal.

A method is described for controlling switching edges for switched output stages, in which a voltage at a switching node of the output stage is detected; a reference time is started when the voltage reaches a predefined reference value; the steepness of the switching edge is reduced if the voltage has reached a second predefined reference value at an end of the reference time; and the steepness of the switching edge is increased if the voltage has not reached the second predefined reference value at the end of the reference time. Furthermore, a control device for adjusting switching edges for switched output stages is provided.

To provide a protection element in which an increase in current due to off-state leakage can be reduced while a drive current can be ensured during an ESD operation.

Provided is the protection element including: a clamp MOS transistor that has a drain coupled to a power supply line and a source coupled to a ground line; and a potential increasing circuit that increases a potential of a diffusion layer at the ground line side of the clamp MOS transistor, more than a potential of the ground line. In this protection element, the potential of the diffusion layer coupled to the ground line of the clamp MOS transistor is increased from the potential of the ground line, whereby an increase in current due to off-state leakage can be reduced while a sufficient drive current is ensured during an ESD operation.