A bias generation circuit may include a bias generator and compensator. The bias generator may be configured to generate a bias voltage based on a reference voltage. The compensator may be configured to detect level changes of a power voltage. The compensator may be configured to control a level of the bias voltage based on detection results.

An integrated circuit includes first and second bus terminals, a pass-gate transistor, first and rising time accelerator (RTA) control circuits, and first and second falling time accelerator (FTA) control circuits. The pass-gate transistor couples between the first and second bus terminals. The first RTA control circuit couples to the first bus terminal, detects a rising edge on the first bus terminal, and accelerates the rising edge on the first bus terminal. The first FTA control circuit couples to the first bus terminal, detects a falling edge on the first bus terminal having a slope below a threshold, and accelerates the falling edge on the first bus terminal. The second RTA and FTA control circuits function similar to the first RTA and FTA control circuits but with respect to the second bus terminal.

A delay element including a first set of field effect transistors (FETs) with gates configured to receive a first control voltage; a second set of FETs coupled in series with the first set of FETs between a first voltage rail and a first node, respectively, the second set of FETs include gates configured to receive a set of complementary select signals, respectively; a third set of FETs including gates configured to receive a set of non-complementary select signals, respectively; a fourth set of FETs coupled in series with the third set of FETs between a second node and a second voltage rail, respectively, the fourth set of FETs including gates configured to receive a second control voltage; and an inverter coupled between the first node and the second node, the inverter including an input configured to receive an input signal and an output configured to produce an output signal.

The present disclosure describes various exemplary memory storage devices that can be programmed to bypass one or more memory cells in a bypass mode of operation. The various exemplary memory storage devices can adjust, for example, pull-up or pull-down, the electronic data as the electronic data passes through these exemplary memory storage devices in the bypass mode of operation. In some situations, the various exemplary memory storage devices may introduce an unwanted bias into the electronic data as the electronic data passes through these exemplary memory storage devices in the bypass mode of operation. The various exemplary memory storage devices can pull-down the electronic data and/or pull-up the electronic data as the electronic data is passing through these exemplary memory storage devices in the bypass mode of operation to compensate for this unwanted bias.

An integrated circuit has a CMOS signal path coupled for receiving a data signal. A compensation circuit is coupled to a power supply rail of the CMOS signal path for injecting a compensation current into the power supply rail. The compensation circuit can be a charge pump operating in response to the data signal to inject the compensation current into the power supply rail each transition of the data signal. The compensation circuit can be a replica CMOS signal path to inject the compensation current into the power supply rail each transition of the data signal. The compensation circuit can be a voltage regulator and current mirror including an input coupled to the voltage regulator. The replica CMOS signal path receives an operating potential from the voltage regulator. An output of the current mirror injects the compensation current into the power supply rail each transition of the data signal.

One example includes a circuit that includes a transistor control circuit having an input and an output adapted to be coupled to the output of the transistor control circuit and can provide a slew-rate compensation voltage proportional to a slew-rate of a control voltage of the transistor. A reference voltage source can be coupled to the slew-rate compensator to provide a reference voltage at the output of the reference voltage source, the slew-rate compensator configured to add the slew-rate compensation voltage to the reference voltage to provide an adjusted reference voltage at the output of the slew rate compensator. A reference comparator having a first input, a second input and an output is coupled to the input of the transistor control circuit. The first input can be coupled to the control terminal of the transistor, and the second input can be coupled to the output of the slew-rate compensator.

An embodiment level converter circuit is configured to receive, as a current supply, a current proportional to temperature.

A method for controlling access to a chip includes obtaining first values of a first physically unclonable function of the chip, obtaining second values that correspond to at least one challenge word, performing a simulation based on the first values and the second values, and generating an authentication result for the chip based on results of the simulation. The simulation may generate responses to logical operations corresponding to combinatorial logic in the chip, and the logical operations may be performed based on a predetermined sequence of the first values and the second values. The chip may be authenticated based on a match between the responses generated by the simulation and a second physically unclonable function of the chip.

A differential output driver circuit includes a drive path having a first output node that provides a first output differential signal and a second output node that provides a complementary second output differential signal to the first output differential signal, a current control transistor to control current of the drive path, and a current measurement resistor circuit located in the drive current path outside of a path segment between the first and second output node. Current flowing through the drive path flows through the current measurement resistor circuit, and a voltage across the current measurement resistor circuit is indicative of an amount of current flowing through the drive path. A transistor control circuit utilizes a voltage across the current measurement resistor circuit to control a control terminal of the current control transistor to control the current in the drive path based on the voltage across the current measurement resistor circuit.

A buffer circuit includes an input terminal configured to receive an input signal, an output terminal, a buffer, and an RC circuit coupled in series with the buffer between the input terminal and the output terminal. The RC circuit includes a first transistor and an RC network including a resistor and a capacitor, the first transistor is coupled in series with the resistor between a power supply node and a reference node, and the buffer and the RC circuit are configured to generate an output signal based on the input signal.