In an embodiment, a class-D amplifier includes an input terminal configured to receive an input signal; a comparator having an input coupled to the input terminal; a deglitching circuit having an input coupled to an output of the comparator; and a driving circuit having an input coupled to an output of the deglitching circuit. The deglitching circuit includes a logic circuit coupled between the input of the deglitching circuit and the output of the deglitching circuit. The logic circuit is configured to receive a clock signal having the same frequency as the switching frequency of the class-D amplifier.

A system may include an external apparatus and a semiconductor apparatus. The semiconductor apparatus may be configured to communicate with the external apparatus by receiving a frequency-varying first clock signal provided from the external apparatus.

In an embodiment, a class-D amplifier includes an input terminal configured to receive an input signal; a comparator having an input coupled to the input terminal; a deglitching circuit having an input coupled to an output of the comparator; and a driving circuit having an input coupled to an output of the deglitching circuit. The deglitching circuit includes a logic circuit coupled between the input of the deglitching circuit and the output of the deglitching circuit. The logic circuit is configured to receive a clock signal having the same frequency as the switching frequency of the class-D amplifier.

In an embodiment, a class-D amplifier includes an input terminal configured to receive an input signal; a comparator having an input coupled to the input terminal; a deglitching circuit having an input coupled to an output of the comparator; and a driving circuit having an input coupled to an output of the deglitching circuit. The deglitching circuit includes a logic circuit coupled between the input of the deglitching circuit and the output of the deglitching circuit. The logic circuit is configured to receive a clock signal having the same frequency as the switching frequency of the class-D amplifier.

Various example embodiments herein disclose a flip-flop including a master latch comprising one of: a plurality of P-type metal-oxide-semiconductor (PMOS) and a plurality of N-type metal-oxide-semiconductor (NMOS). A slave latch includes one of: a plurality of PMOS and a plurality of NMOS. An inverted clock signal input is communicatively connected with the master latch and the slave latch. The master latch includes a single pre-charge node. The single pre-charge node sets up a data capture path in the flip flop. Data is stored in the master latch and the slave latch via the pre-charge node.

The present disclosure relates to a synchronous device comprising: a first latch (206) having a data input receiving a data input signal (LD1) and configured to store the data input signal (LD1) during a first state of a first clock signal (CP); and a slack guard circuit comprising: a delay element (214) having an input coupled to the data input of the first latch (206) and configured to generate, at its output, a delayed data signal (PG1); a gated-input cell (216) having an input coupled to an output of the delay element (214), the gated-input cell (216) being configured to propagate the delayed data signal (PG1) during the first state of the first clock signal (CP); and a comparator (218) having a first input coupled to a data output of the first latch (206) and a second input coupled to an output of the gated-input cell (216).

Provided is a digital circuit (30) that comprises: a switching circuit (31) having first, transistors (32, 33) supplied with power supply potentials (VDD, VSS): correcting circuits (34, 36) connected between an input terminal (IN) inputted with an input signal and control terminals (gates) of the first transistors; capacitors (C2, C3) connected between the control terminals and the input terminal; diode-connected second transistors (35, 37) that are provided between nodes (N5, N6) between the capacitors and the control terminals and the power supply potentials and have the substantially same threshold voltage as the first transistors; and switches (SW2, SW3) connected in series with the second transistors.

A buffer output circuit, a driving method thereof and a memory apparatus are provided. The memory apparatus includes a memory array and the buffer output circuit including a first output stage circuit and a second output stage circuit. The first output stage circuit and the second output stage circuit receive the data signal at the same time and are both coupled to the data output terminal outputting a data output signal. The second output stage circuit receives a feedback signal from the first output stage circuit. During a pre-charging-discharging period, the first output stage circuit performs a voltage pre-raising operation or a voltage pre-decreasing operation on the data output signal based on the data signal, and the second output stage circuit keeps the level of the data output signal changing based on the feedback signal until the state transition of the data output signal is completed.

In some embodiments, a buffer stage device includes a data input for receiving a data signal, a clock input for receiving a clock signal, a data output and a processor that is configured to deliver, to the data output, the data from the data signal in synchronism with clock cycles of the clock signal. The processor includes a first buffer module configured to deliver, to the data output, each datum in synchronism with a first edge of the clock signal and during a first half of a clock cycle, and a second buffer module configured to hold the datum at the data output during the second half of the clock cycle.

Integrated circuit devices are provided. The devices may include a substrate including a first region, a second region and a boundary region between the first and second regions. The first and second regions may be spaced apart from each other in a first horizontal direction. The devices may also include a first latch on the first region, a second latch on the second region, and a conductive layer extending in the first horizontal direction and crossing over the boundary region. The first latch may include a first vertical field effect transistor (VFET), a second VFET, a third VFET, and a fourth VFET. The second latch may include a fifth VFET, a sixth VFET, a seventh VFET, and an eighth VFET. The first and seventh VFETs may be arranged along the first horizontal direction. Portions of the conductive layer may include gate electrodes of the first and seventh VFETs, respectively.