A multi-format signal driver interface has first, second and third pairs of transistors arranged in a back-to-back relationship. First transistors and second transistors of the first and second pairs of transistors form respective first and second parallel arrangement. The first transistors of the third pair of transistors are in series with the first parallel arrangement, and the second transistors of the third pair of transistors are in series with the second parallel arrangement. The sizing of the second pair of transistors is greater than the first and third pairs of transistors. A pre-driver module configures the multi-format signal driver interface to output a selected signal format. A differential amplifier is selectively couple-able to said pre-driver module to provide a common mode voltage. In each format the interface employs a current loop in the output. The transistor pairs are one-to-one loaded in each mode.

A voltage level translation circuit includes a first energy storage unit, a second energy storage unit, a first voltage level translation unit, and a second voltage level translation unit. The first voltage level translation unit is configured to translate a first communication interface transmitting pin voltage signal to realize a first communication between a first communication interface transmitting pin and a second communication interface receiving pin. The second voltage level translation unit is configured to translate a second communication interface transmitting pin voltage signal to realize a second communication between a second communication interface transmitting pin and a first communication interface receiving pin. A multiple interface communication system is also provided.

Techniques are disclosed for a level shifter configured to adjust current flow in response to measured current fluctuations due to common mode noise in the level shifter. For example, the level shifter includes a low-side control circuit configured to adjust a first current flowing into a first low-side terminal of an active high voltage level shifter device in response to a difference between the first low-side current and a second low-side current flowing into a second low-side terminal of an inactive high voltage level shifter device. The level shifter further includes a high-side receiver circuit configured to detect a difference between a first high-side current flowing into a first high-side terminal of the active high voltage level shifter device and a second high-side current flowing into a second high-side terminal of the inactive high voltage level shifter device.

A gate driver circuit for prevention of an arm short may include a drive controller configured to a gate drive signal, a drive signal transfer portion configured to amplify the gate drive signal and output the amplified gate drive signal, a variable resistance portion configured to change a time constant of the amplified gate drive signal using an internal resistance and output the amplified gate drive signal having the changed time constant to a gate of a semiconductor device, and a resistance controller configured to compare a first DESAT pin voltage of the drive controller with a first predetermined reference value and control the internal resistance of the variable resistance portion using the comparison result with the first predetermined reference value to perform a first driver circuit protection.

Techniques are disclosed for a level shifter configured to adjust current flow in response to measured current fluctuations due to common mode noise in the level shifter. For example, the level shifter includes a low-side control circuit configured to adjust a first current flowing into a first low-side terminal of an active high voltage level shifter device in response to a difference between the first low-side current and a second low-side current flowing into a second low-side terminal of an inactive high voltage level shifter device. The level shifter further includes a high-side receiver circuit configured to detect a difference between a first high-side current flowing into a first high-side terminal of the active high voltage level shifter device and a second high-side current flowing into a second high-side terminal of the inactive high voltage level shifter device.

The invention relates to a level converter for adjusting a first reference potential and/or a first communication voltage of a first component to a second reference potential and/or a second communication voltage of a second component, wherein the level converter is arranged between the first component and the second component, wherein the level converter has a first transistor with a downstream first resistor, wherein the level converter is configured in such a way that the second reference potential drops at the first resistor in a blocked state of the first transistor and that the second communication voltage drops at the first resistor in an open state of the first transistor.