The present description concerns a comparator (1) of a first voltage (V+) and of a second voltage (V−), comprising first (100) and second (102) branches each comprising a same succession of alternated first (106) and second (108) gates in series between a node (104) and an output (1002; 1022) of the branch (100; 102), wherein: each branch starts with a first gate (106), each gate (106; 108) has a second node (114) receiving a bias voltage, the second node (114) of each first gate (106) of the first branch (100) and of each second gate (108) of the second branch (102) receives the first voltage (V+), the second node of the other gates receiving the second voltage (V−), and an order of arrival of the edges on the outputs (1002; 1022) of the branches determines a result of a comparison.

The present description concerns a comparator (1) of a first voltage (V+) and of a second voltage (V−), comprising first (100) and second (102) branches each comprising a same succession of alternated first (106) and second (108) gates in series between a node (104) and an output (1002; 1022) of the branch (100; 102), wherein: each branch starts with a first gate (106), each gate (106; 108) has a second node (114) receiving a bias voltage, the second node (114) of each first gate (106) of the first branch (100) and of each second gate (108) of the second branch (102) receives the first voltage (V+), the second node of the other gates receiving the second voltage (V−), and an order of arrival of the edges on the outputs (1002; 1022) of the branches determines a result of a comparison.

The invention is to provide a compact reconfigurable circuit implementing a LUT and a “hard” circuit. The present invention provides a reconfigurable circuit comprising: first wires disposed in a first direction; a second wire disposed in a second direction intersecting the first direction; a power line, a ground line and data input line or data input inverse line coupled to the said first wires one-to-one; a multiplexer, one of whose inputs is connected with the second wire; nonvolatile switch cells utilized to interconnect the first wires and second wire at the crosspoints, wherein every nonvolatile switch cell is constructed by at least one non-volatile resistive switch.

Disclosed is an inverter which includes a first P-MOS transistor connected between a node receiving a drain voltage and a first path node and operated based on an input voltage, a first N-MOS transistor connected between the first path node and an output terminal outputting an output voltage and operated based on the drain voltage, a second P-MOS transistor connected between the output terminal and a second path node and operated based on a ground voltage, a second N-MOS transistor connected between the second path node and a node receiving the ground voltage and operated based on the input voltage, a third P-MOS transistor connected between the first path node and the second path node and operated based on the input voltage, and a third N-MOS transistor connected between the first path node and the second path node and operated based on the input voltage.

In summary, a level shift circuit, comprising an input in low voltage domain and an output in a high voltage domain, a first and second gating device coupled to said input, a first and second error sensing devices coupled to a said first and second gating devices, respectively, a logic block configured to monitor a state of said output and to control of said first and second gating devices, and wherein said first and second error sensing devices are coupled to a memory device configured to store said state of said output. In addition, a method of a level shift circuit, comprising the steps of a first step (a) providing an input in a low voltage domain, an output in a high voltage domain, first and second gating device, first and second error sensing device, a logic block, and a memory device, a second step (b) sensing errors in said first and second error devices, a third step (c) monitoring a state of said output of said first and second gating devices, a fourth step (d) controlling a state of said first and second gating devices, and a fifth step (e) storing said state of said output in said memory device.

Systems, apparatuses, and methods for implementing a high-performance clock-gating circuit are described. A first pull-down stack receives enable and pulse signals on gates of N-type transistors which pull down an output node when the enable and pulse signals are both high. A pull-up transistor coupled to the output node receives a clock signal which turns off the pull-up transistor when the clock signal is high. A first pull-up stack receives the inverted pulse signal and the enable signal on gates of P-type transistors to cause the output node to be high when the enable signal and inverted pulse signal are low. A second pull-up stack maintains a high voltage on the output node after the pulse event has ended but while the clock signal is still high. A second pull-down stack maintains a low voltage on the output node after the pulse event but while the clock remains high.

Systems, apparatuses, and methods for implementing a high-performance clock-gating circuit are described. A first pull-down stack receives enable and pulse signals on gates of N-type transistors which pull down an output node when the enable and pulse signals are both high. A pull-up transistor coupled to the output node receives a clock signal which turns off the pull-up transistor when the clock signal is high. A first pull-up stack receives the inverted pulse signal and the enable signal on gates of P-type transistors to cause the output node to be high when the enable signal and inverted pulse signal are low. A second pull-up stack maintains a high voltage on the output node after the pulse event has ended but while the clock signal is still high. A second pull-down stack maintains a low voltage on the output node after the pulse event but while the clock remains high.

A switch comprising a spin-transistor and a first control wire. The spin-transistor is configured so that when a magnetic field applied to the spin-transistor is less than a threshold value, the transistor is in a conductive state in which electric current flows through the spin-transistor. When the magnetic field applied to the spin-transistor is greater than the threshold value, the spin-transistor is in a resistive state in which the electric current flowing through the spin-transistor is substantially reduced. The first control wire is for receiving a current to affect the magnetic field applied to the spin-transistor.

A switch comprising a spin-transistor and a first control wire. The spin-transistor is configured so that when a magnetic field applied to the spin-transistor is less than a threshold value, the transistor is in a conductive state in which electric current flows through the spin-transistor. When the magnetic field applied to the spin-transistor is greater than the threshold value, the spin-transistor is in a resistive state in which the electric current flowing through the spin-transistor is substantially reduced. The first control wire is for receiving a current to affect the magnetic field applied to the spin-transistor.

A current source logic gate with depletion mode field effect transistor (“FET”) transistors and resistors may include a current source, a current steering switch input stage, and a resistor divider level shifting output stage. The current source may include a transistor and a current source resistor. The current steering switch input stage may include a transistor to steer current to set an output stage bias point depending on an input logic signal state. The resistor divider level shifting output stage may include a first resistor and a second resistor to set the output stage point and produce valid output logic signal states. The transistor of the current steering switch input stage may function as a switch to provide at least two operating points.