An Ethernet network is composed of one or more network infrastructure devices, such as a hubs, repeaters, switches or routers, which provides data interconnection and may provide operational power, or some part thereof, to remote network data terminal equipment such as a wireless access point, IP telephone, IP camera or network end station. Most Ethernet networks operate over a combination of the pairs in an unshielded twisted pair (UTP) or shielded twisted pair (STP) cable, or in some cases may operate over fiber optic cables. The individual links of Ethernet network, between the network infrastructure device and the Data Terminal Equipment (DTE) may be able to operate at one or more data rates such as 10 Mb/s, 100 Mb/s, 1 Gb/s, 2.5 Gb/s, 5 Gb/s and 10 Gb/s, or any combination thereof. The invention discloses an Ethernet Physical Layer (PHY) circuit, in combination with an Integrated Connector Module (ICM), which may reside inside the network equipment at either end of the Ethernet link. The combined PHY-ICM physical layer network device provides the appropriate encoding/decoding and signaling to operate over the specific network cable medium at the required data rate(s). The electrical and mechanical design of the combined PHY-ICM enables a modular approach such that during final assembly, the PHY-ICM can be optimized for operation over the appropriate data rate(s), whether it supports the provision of operational power between the network equipment, and if so at what power level, as well as other functionality. Furthermore, the PHY-ICM is designed to maintain a common electrical and mechanical footprint regardless of which of the features are included or excluded, to optimize the system cost for a specific maximum data rate, as well as minimize any re-engineering necessary on the part of the network equipment designer.

Some embodiments include a system comprising: a particle power source configured to generate a particle power signal; a radio frequency (RF) power source configured to generate an RF power signal; a particle source configured to generate a particle beam in response to the particle power signal; a RF source configured to generate an RF signal in response to the RF power signal; and an accelerator structure configured to accelerate the particle beam in response to the RF signal; wherein a timing of the RF power signal is different from a timing of the particle power signal.

A circuit includes a phase control logic, an analog-to-digital converter (ADC), and digital logic. The phase control logic is configured to couple to a plurality of power phases of a multi-phase power supply. The digital logic is configured to couple to the phase control logic and the ADC, to receive an instruction to operate in a self-calibration mode of operation, receive a first message including a value associated with a calibrated load configured to couple to the plurality of power phases, perform a self-calibration sub-routine for each power phase of the plurality of power phases based at least partially on the received instruction, the received first message, and a signal received from the ADC, and receive a second message instructing the digital logic to store a result of the self-calibration in a memory of the circuit.

A power gating system including: a first power line coupled to a first pad; a second power line coupled to a second pad; a third power line coupled to a plurality of logic gates in common; a first power gating switch coupled between the first and third power lines; and a second power gating switch coupled between the second and third power lines. When a double power mode is set, the first and second power gating switches may be turned on to couple the first and second power lines to the third power line at the same time.

An apparatus is provided, where the apparatus includes a first transistor coupled between a supply node and an output node; a resistor and a second transistor coupled in series between the output node and a ground terminal; a circuitry to receive data, and to output a first control signal and a second control signal to respectively control the first transistor and the second transistor, wherein an output signal at the output node is indicative of the data, and wherein the first transistor is a N-type transistor.

A programmable semiconductor device includes a user programmable switch comprising a configurable element positioned above a transistor material layer deposited on a substrate layer.

The signal multiplexer 1 inputs two selection signals CLK<1>, CLK<2> that sequentially reach significant levels, inputs two input signals IN<1>, IN<2>, and outputs, from an output terminal 14, a signal OUT that depends on an m-th input signal IN<m> of the two input signals when an m-th selection signal CLK<m> of the two selection signals is at the significant level. The signal multiplexer 1 includes a resistance unit 20 and two drive units 30.sub.1, 30.sub.2. Each of the drive units 30.sub.m includes a driving switch 31.sub.m, a selecting switch 32.sub.m, and a potential stabilizing switch 33.sub.m. When one of the selecting switch 32.sub.m and the potential stabilizing switch 33.sub.m in each of the drive units 30.sub.m is in a closed state, the other is in an open state.

A system includes a processing circuit and a circuit configured to output a given number N of bits of configuration information to be used by the processing circuit. The circuit includes a non-volatile programmable memory configured to output a first group of N bits, N terminals for receiving a second group of N bits, and N logic gates. A first input terminal of each logic gate is connected to a respective bit of output from the non-volatile programmable memory and wherein a second input terminal of each logic gate is connected to a respective terminal of the N terminals.

An integrated circuits with sequential logic circuitry is provided. The sequential logic circuitry may including latching circuits that receive clock signals from on-chip or off-chip clock sources. The clock signals may exhibit clock skew that is native to the integrated circuit. The natively existing clock skew can be leverage to perform time borrowing to help optimize circuit performance. The desired clock skew can be achieved by intelligent placement of the clock sources and deliberate routing of the clock signals from the clock sources to respective types of clock distribution networks on the integrated circuit.

A nonvolatile memory device includes a control logic circuit that receives a read command from outside the nonvolatile memory device, a memory cell array which includes a plurality of memory cells connected to a plurality of word lines, an address generator that generates a plurality of addresses based on read information from the outside of the nonvolatile memory device, an address decoder sequentially selects a plurality of pages in at least one word line, which correspond to the plurality of addresses, a page buffer circuit that is connected to the memory cell array through a plurality of bit lines, and prepares a plurality of sequential data from memory cells connected to the selected pages by the address decoder, and an input/output circuit that continuously outputs the plurality of sequential data from the page buffer circuit to the outside of the nonvolatile memory device through data lines.