Embodiments provide a method for data storage and comparison, a storage comparison circuit device, and a semiconductor memory. The storage comparison circuit device includes a latch and a comparator. The latch is configured to latch inputted first input data and output first output data and second output data. The first output data are the same as the first input data, whereas the second output data are different from the first input data, wherein the first output data and the second output data are respectively inputted into the comparator. The comparator is configured to receive second input data, the first output data and the second output data, and to output a comparison result. By using modular structures of the latch and the comparator, device data can be simplified for the latch and the comparator, chip area can be reduced, calculation amount can be reduced, and efficiency of data comparison can be improved.

A level shifter circuit with an intermediate power domain and method for operating the same is disclosed. The level shifter circuit includes an input circuit, an output circuit, and an intermediate circuit. The input circuit is coupled to receive an input signal from a first voltage domain operating according to a first supply voltage, and generates a first intermediate signal. The intermediate circuit receives the first intermediate signal and generates a second intermediate signal. The output circuit receives the intermediate signal and provides an output signal into a second voltage domain operating at a second supply voltage different from the first. A voltage multiplexer is configured to provide one of the first or second supply voltages to the intermediate circuit depending on a state of the input signal.

This application relates to a synchronization circuit for synchronizing signals used in a threshold implementation operation process performing in an S-box of an encryption circuit. In one aspect, the synchronization circuit includes an enable signal generator configured to generate an enable signal. The synchronization circuit may also include a synchronization unit included in an encryption circuit and located inside an S-box that performs a threshold implementation operation that calculates by dividing bits of an input signal into bits equal to or greater than the number of bits of the input signal. The synchronization unit may be configured to synchronize signals used in a threshold implementation operation process based on the generated enable signal.

A level shifter circuit with an intermediate power domain and method for operating the same is disclosed. The level shifter circuit includes an input circuit, an output circuit, and an intermediate circuit. The input circuit is coupled to receive an input signal from a first voltage domain operating according to a first supply voltage, and generates a first intermediate signal. The intermediate circuit receives the first intermediate signal and generates a second intermediate signal. The output circuit receives the intermediate signal and provides an output signal into a second voltage domain operating at a second supply voltage different from the first. A voltage multiplexer is configured to provide one of the first or second supply voltages to the intermediate circuit depending on a state of the input signal.

An apparatus includes a clockless delay adaptation loop configured to adapt to random data. The apparatus also includes a circuit coupled to the clockless delay adaptation loop. The clockless delay adaptation loop includes a cascaded delay line and an autocorrelation control circuit coupled to the cascaded delay line, wherein an output of the autocorrelation control circuit is used to generate a control signal for the cascaded delay line.

A CMOS transistor circuit including: a first block generating a first output signal of a NOR state, in response to first and second input signals; a second block including a first AND-OR gate, the second block generating a second output signal of an OR or an AND state, the second block receiving the first and second input signals and the first output signal; a third block generating a third output signal of the NOR state, in response to a third input signal and the second output signal; a fourth block including a second AND-OR gate, the fourth block generating a fourth output signal of the OR or the AND state in response to the third input signal, the second output signal and the third output signal; and a fifth block including an inverter gate, the fifth block generating a fifth output signal in response to the fourth output signal.

Provided is a binary neural network including: a synapse string array in which multiple synapse strings are sequentially connected. The synapse string includes: first and second cell strings, each including memory cell devices connected in series; and switching devices connected to first ends of two-side ends of the first and second cell strings. The memory cell devices of the first and second cell strings are in one-to-on correspondence to each other, and a pair of the memory cell devices being in one-to-on correspondence to each other have one-side terminals electrically connected to each other to constitute one synapse morphic device. A plurality of the pairs of memory cell devices configured with the first and second cell strings constituting each synapse string constitute a plurality of the synapse morphic devices. The synapse morphic devices of each synapse string are electrically connected to the synapse morphic devices of other synapse strings.

An erroneous bit determining circuit and a method are provided. The method includes: respectively performing a Hamming operation for an information symbol having an even weight and an information symbol having an odd weight to acquire a check symbol configured for the information symbol having an even weight and a check symbol configured for the information symbol having an odd weight; and respectively generating corresponding code words based on the information symbol having an even weight, the information symbol having an odd weight and the check symbols configured therefor. In this way, information symbols having the same number of bits are corrected without increasing the number of check symbol bits, and thus symbol transmission rate is improved.

An adder circuit provides a first operand input and a second operand input to an XNOR cell. The XNOR cell transforms these inputs to a propagate signal that is applied to an OAT cell to produce a carry out signal. A third OAT cell transforms a third operand input and the propagate signal into a sum output signal.

This disclosure relates to an adder circuit. The adder circuit comprises an operand input and a second operand input to an XNOR cell. The XNOR cell may be configured to provide the operand input and the second operand input to both a NAND gate and a first OAI cell. A second OAI cell may transform the output of the XNOR cell into a carry out signal.