An image sensor includes a pixel array including first pixels and second pixels, each of the first and second pixels including photodiodes, a sampling circuit detecting a reset voltage and a pixel voltage from the first and second pixels and generating an analog signal, an analog-to-digital converter image data from the analog signal, and a signal processing circuit generating an image using the image data. Each of the first pixels includes a first conductivity-type well separating the photodiodes and having impurities of a first conductivity-type. The photodiodes have impurities of a second conductivity-type different from the first conductivity-type. Each of the second pixels includes a second conductivity-type well separating the photodiodes and having impurities of the second conductivity-type different from the first conductivity-type. A potential level of the second conductivity-type well is higher than a potential level of the first conductivity-type well.

It is an object of the present technology to provide an image sensor capable of reducing crosstalk in an AD conversion unit. The image sensor includes: capacitors in an even-numbered column region; and a capacitor in an odd-numbered column region disposed facing the capacitors in the even-numbered column region with different areas.

It is an object of the present technology to provide an image sensor capable of reducing crosstalk in an AD conversion unit. The image sensor includes: capacitors in an even-numbered column region; and a capacitor in an odd-numbered column region disposed facing the capacitors in the even-numbered column region with different areas.

Numerous embodiments of analog neural memory arrays are disclosed. In one embodiment, an analog neural memory system comprises an array of non-volatile memory cells, wherein the cells are arranged in rows and columns, the columns arranged in physically adjacent pairs of columns, wherein within each adjacent pair one column in the adjacent pair comprises cells storing W+ values and one column in the adjacent pair comprises cells storing W− values, wherein adjacent cells in the adjacent pair store a differential weight, W, according to the formula W=(W+)−(W−). In another embodiment, an analog neural memory system comprises a first array of non-volatile memory cells storing W+ values and a second array storing W− values.

An AD conversion circuit provided in a solid-state image sensor includes a counter circuit that performs count processing and a first latch circuit that holds at least one of a discrimination result of a first comparison circuit and a first output result of the counter circuit.

An AD conversion circuit provided in a solid-state image sensor includes a counter circuit that performs count processing and a first latch circuit that holds at least one of a discrimination result of a first comparison circuit and a first output result of the counter circuit.

An image sensor is provided. The image sensor includes a counting code generator configured to generate a counting code, a pixel array including at least one pixel, a correlated double sampling (CDS) circuit configured to compare a magnitude of a pixel signal output from the at least one pixel with a magnitude of a ramp signal and to output a corresponding comparison signal, a pulse generator configured to generate a pulse signal synchronized with a first clock signal based on the comparison signal, and a counter circuit configured to latch a value of the counting code to correspond to a transition of a level of the comparison signal based on the pulse signal.

An image sensor is provided. The image sensor includes a counting code generator configured to generate a counting code, a pixel array including at least one pixel, a correlated double sampling (CDS) circuit configured to compare a magnitude of a pixel signal output from the at least one pixel with a magnitude of a ramp signal and to output a corresponding comparison signal, a pulse generator configured to generate a pulse signal synchronized with a first clock signal based on the comparison signal, and a counter circuit configured to latch a value of the counting code to correspond to a transition of a level of the comparison signal based on the pulse signal.

An electronic circuit includes first and second channels which respectively receive first and second analog signals. The first channel includes a first digital to analog converter having an output coupled to a first input of a first sign comparator, and the second channel includes a second digital to analog converter. A switch network selectively couples, upon reception of a self-test mode signal signaling a test phase, an output of the second digital to analog converter to a second input of the first sign comparator. A ramp generation circuit supplies to the first digital to analog converter and the second digital to analog converter two identical ramps of digital codes, which are shifted by a programmable offset with respect to one another. A checking circuit issues a test status signal based on the output of the first sign comparator.

An electronic circuit includes first and second channels which respectively receive first and second analog signals. The first channel includes a first digital to analog converter having an output coupled to a first input of a first sign comparator, and the second channel includes a second digital to analog converter. A switch network selectively couples, upon reception of a self-test mode signal signaling a test phase, an output of the second digital to analog converter to a second input of the first sign comparator. A ramp generation circuit supplies to the first digital to analog converter and the second digital to analog converter two identical ramps of digital codes, which are shifted by a programmable offset with respect to one another. A checking circuit issues a test status signal based on the output of the first sign comparator.