An image sensor comprising a pixel array in which a plurality of pixels are arranged and a row driver . Each of the pixel includes a photodiode, a transfer transistor for transferring photocharges of the photodiode to a floating diffusion node (FD), a conversion gain control transistor, a first source follower for amplifying and outputting the voltage of the FD to a first node, a precharge selection transistor connected between the first node and a second node, a first capacitor, a first sampling transistor connected between the second node and the first capacitor, a second capacitor, a second sampling transistor connected between the second node and the second capacitor, a second source follower for amplifying a voltage of the second node, a first selection transistor connected between the second source follower and a column line, and a second selection transistor connected between the first node and the column line.

An image sensor comprising a pixel array in which a plurality of pixels are arranged and a row driver . Each of the pixel includes a photodiode, a transfer transistor for transferring photocharges of the photodiode to a floating diffusion node (FD), a conversion gain control transistor, a first source follower for amplifying and outputting the voltage of the FD to a first node, a precharge selection transistor connected between the first node and a second node, a first capacitor, a first sampling transistor connected between the second node and the first capacitor, a second capacitor, a second sampling transistor connected between the second node and the second capacitor, a second source follower for amplifying a voltage of the second node, a first selection transistor connected between the second source follower and a column line, and a second selection transistor connected between the first node and the column line.

A pixel of an image sensor includes: a semiconductor material substrate; a photosensitive region formed in the substrate, the photosensitive region generating photo-induced electrical charge in response to illumination with light; a storage node formed in the substrate proximate to the photosensitive region, the storage node selectively receiving and storing photo-induced electrical charge generated by the photosensitive region; and a shield formed over the storage node which inhibits light from reaching the storage node, the shield including an extension which protrudes into the substrate and surrounds an outer periphery of the storage node.

A pixel of an image sensor includes: a semiconductor material substrate; a photosensitive region formed in the substrate, the photosensitive region generating photo-induced electrical charge in response to illumination with light; a storage node formed in the substrate proximate to the photosensitive region, the storage node selectively receiving and storing photo-induced electrical charge generated by the photosensitive region; and a shield formed over the storage node which inhibits light from reaching the storage node, the shield including an extension which protrudes into the substrate and surrounds an outer periphery of the storage node.

Image quality enhancement in a solid-state imaging element with simultaneous pixel exposure is disclosed. In one example, a solid-state imaging element includes a first pixel with a first selection transistor that opens and closes a path between a first capacitive element holding a predetermined reset level and a predetermined node, and a second selection transistor that opens and closes a path between a second capacitive element holding a signal level corresponding to an exposure amount and the node. It also includes a second pixel with a third selection transistor that opens and closes a path between a third capacitive element holding a predetermined reset level and a predetermined node, and a fourth selection transistor that opens and closes a path between a fourth capacitive element holding a signal level corresponding to the exposure amount.

Image quality enhancement in a solid-state imaging element with simultaneous pixel exposure is disclosed. In one example, a solid-state imaging element includes a first pixel with a first selection transistor that opens and closes a path between a first capacitive element holding a predetermined reset level and a predetermined node, and a second selection transistor that opens and closes a path between a second capacitive element holding a signal level corresponding to an exposure amount and the node. It also includes a second pixel with a third selection transistor that opens and closes a path between a third capacitive element holding a predetermined reset level and a predetermined node, and a fourth selection transistor that opens and closes a path between a fourth capacitive element holding a signal level corresponding to the exposure amount.

An image-sensing system includes multiple sensing modules. Each of the multiple sensing modules includes multiple optical sensors arranged in an array. Each of the multiple sensors is configured to be switched on and off to generate analog sensing data. The image-sensing system also includes an analog-to-digital converter (ADC) shared by the multiple optical sensors configured to convert analog sensing data generated by the multiple optical sensors into digital data. The image-sensing system also includes a processor configured to control the multiple sensing modules.

An image-sensing system includes multiple sensing modules. Each of the multiple sensing modules includes multiple optical sensors arranged in an array. Each of the multiple sensors is configured to be switched on and off to generate analog sensing data. The image-sensing system also includes an analog-to-digital converter (ADC) shared by the multiple optical sensors configured to convert analog sensing data generated by the multiple optical sensors into digital data. The image-sensing system also includes a processor configured to control the multiple sensing modules.

In global shutter image sensors, the light shields are often not completely lightproof and incoming light causes continued generation of charges in the shielded storage units even after the global shutter functionality has ended exposure, such as during the readout of the recorded image. This parasitic light degrades the recorded image. Disclosed is a method, performed by an imaging device with a global shutter image sensor, for recording an image with reduced degrading effects from parasitic light in the image sensor. The disclosed imaging device and related method combine the global shutter functionality of the global shutter image sensor with a shutter such as a mechanical shutter. A precise synchronisation of the closing of the shutter means that the shutter can block all incoming lightand thus stop parasitic light in the image sensorshortly after the exposure is stopped by the global shutter image sensor. This allows the imaging device to record very short exposure images without the detrimental effects of parasitic light.

In global shutter image sensors, the light shields are often not completely lightproof and incoming light causes continued generation of charges in the shielded storage units even after the global shutter functionality has ended exposure, such as during the readout of the recorded image. This parasitic light degrades the recorded image. Disclosed is a method, performed by an imaging device with a global shutter image sensor, for recording an image with reduced degrading effects from parasitic light in the image sensor. The disclosed imaging device and related method combine the global shutter functionality of the global shutter image sensor with a shutter such as a mechanical shutter. A precise synchronisation of the closing of the shutter means that the shutter can block all incoming lightand thus stop parasitic light in the image sensorshortly after the exposure is stopped by the global shutter image sensor. This allows the imaging device to record very short exposure images without the detrimental effects of parasitic light.