In one example, an apparatus is provided. The apparatus comprises an image sensor configured to generate a first raw output to represent a first intensity of incident light based on a first relationship, and to generate a second raw output to represent a second intensity of incident light based on a second relationship. The apparatus further comprises a post processor configured to: generate a first post-processed output based on the first raw output and based on the first relationship such that the first post-processed output is linearly related to the first intensity based on a third relationship, and to generate a second post-processed output based on the second raw output and based on the second relationship such that the second post-processed output is linearly related to the second intensity based on the third relationship.

In one example, an apparatus comprises: a comparator; a sampling capacitor having a first plate and a second plate. The first plate is coupled with an output of a charge sensing unit that senses charge generated by a photodiode, whereas the second plate is coupled with an input of the comparator. The apparatus further includes a controller configured to: at a first time, set a first voltage across the sampling capacitor based on an output voltage of the charge sensing unit; reset the charge sensing unit to set the first plate at a second voltage and to set the second plate at a third voltage based on the first voltage and the second voltage; compare, using the comparator, the third voltage against one or more thresholds; and generate, based on the comparison result, a quantization result of the output voltage of the charge sensing unit at the first time.

An imaging device includes: a first unit pixel cell including first and second electrodes, a first photoelectric conversion layer therebetween, and a first signal detection circuit connected to the first electrode; and a voltage supply circuit supplying a voltage to the second electrode. The voltage supply circuit forms exposure periods and one or more non-exposure periods that separate the exposure periods from each other by changing the voltage. The exposure and non-exposure periods are included in each of a first frame period and a second frame period subsequent to the first frame period. Timing of a start and an end of each of the exposure periods in the first frame period is the same as that of each of the exposure periods in the second frame period. Magnitude of change of the voltage in the first frame period is different from that of the voltage in the second frame period.

The present disclosure relates to an image sensor comprising a plurality of pixel circuits each comprising a photodiode connected between ground and a floating diffusion (FD) node, a reset transistor (MRST) connected between a first voltage supply and the floating diffusion (FD) node, and a source follower transistor (MSF), wherein its drain is connected to a second voltage supply, the gate is connected to a floating diffusion (FD) node and the source is connected to a row select transistor (MSEL). The row select transistor (MSEL) is connected between the source of the source follower transistor (MSF) and a common column output. Each pixel circuit is configured to output an output signal corresponding to a light incident on the photodiode. Each pixel circuit includes at least one additional transistor for configuring each pixel circuit to selectively output a linear integration signal or a logarithmic signal.

An image sensor includes a pixel array, an analog-to-digital conversion circuit, and an image signal processor. A pixel of the pixel array generates a first analog signal based on a quantity of charge accumulated during a first exposure time and generate a second analog signal based on a quantity of charge accumulated during a shorter second exposure time. The analog-to-digital conversion circuit may generate a first digital signal based on the first analog signal and a first ramp signal and may generate a second digital signal based on the second analog signal and a second ramp signal. The image signal processor may generate image data based on the first and second digital signals. The first ramp signal may be different from the second ramp signal in terms of at least one of a ramping time or a ramping start voltage level.

An image sensor includes a pixel array, an analog-to-digital conversion circuit, and an image signal processor. A pixel of the pixel array generates a first analog signal based on a quantity of charge accumulated during a first exposure time and generate a second analog signal based on a quantity of charge accumulated during a shorter second exposure time. The analog-to-digital conversion circuit may generate a first digital signal based on the first analog signal and a first ramp signal and may generate a second digital signal based on the second analog signal and a second ramp signal. The image signal processor may generate image data based on the first and second digital signals. The first ramp signal may be different from the second ramp signal in terms of at least one of a ramping time or a ramping start voltage level.

An imaging device includes: a pixel; a signal line electrically connected to the pixel; and a first and second sample-and-hold circuits electrically connected to the signal line. The pixel includes: a photoelectric converter that generates signal charge; a charge accumulation region that accumulates the signal charge; a reset transistor that resets a voltage of the charge accumulation region; and an amplifier transistor that amplifies a signal voltage. The first sample-and-hold circuit includes: a first switch that is electrically connected to the signal line and has input-output characteristics in which an output is clipped at a clipping voltage with respect to an input exceeding the clipping voltage; and a first capacitor electrically connected to the signal line through the first switch. The second sample-and-hold circuit includes: a second switch electrically connected to the signal line; and a second capacitor electrically connected to the signal line through the second switch.

Observation in which the properties of a detection element are utilized is performed. Provided is a detection device including: a detector that has a linear response characteristic, in which an output signal changes linearly, and a nonlinear response characteristic, in which the output signal changes nonlinearly, and that detects light from a sample and outputs the output signal in accordance with the intensity of the light; a light detection circuit that is capable of switching between a first amplification factor and a second amplification factor, the light detection circuit amplifying the output signal output from the detector based on the first amplification factor or the second amplification factor so as to generate a brightness signal; and an input unit with which a user is allowed to switch the amplification factor for the output signal to be used between the first amplification factor and the second amplification factor.

Systems and methods are provided to render a plurality of graphical assets each having a format of a plurality of formats. Each graphical asset is processed by determining whether the format of the graphical asset is compatible with a predetermined render domain format and responsive to determining the format is not compatible with the predetermined render domain format, converting, using a format conversion circuit, the format to the predetermined render domain format. The plurality of graphical assets are rendered using a single rendering engine operable coupled to the format conversion circuit using the predetermined render domain format.

The present invention relates to an image sensor and to an imaging system comprising such a sensor. According to the invention, the overall conversion curve describing the conversion between photon flux and digital number comprises a first region in which the conversion is essentially linear and a second region in which the conversion is essentially non-linear.

According to the invention, the non-linearity of the second region is obtained by operating the photodiode of the image sensor in its non-linear range and by changing the gain associated with the conversion between pixel voltage and digital number.