A pixel structure comprises at least one radiation-sensing element, for generating charges when exposed to radiation. The pixel structure includes a first connection arrangement between the at least one radiation-sensing element and a first source follower. The first connection arrangement has a switchable connection to a first reset voltage. At least one second connection arrangement is between the at least one radiation-sensing element and at least one second source follower. The second connection arrangement has a switchable connection to a second reset voltage. The first and at least one second source followers have a common output. The first and second connection arrangements and source followers are configured to provide each a different offset to the common output.

An imaging apparatus includes: a photoelectric converter that generates charge through photoelectric conversion; a charge accumulator in which the charge is accumulated; and a metal-oxide-semiconductor capacitor including a first terminal, a second terminal, a gate, an oxide layer, and at least one semiconductor region. During exposure, the first terminal is electrically connected to the charge accumulator. The gate is electrically connected to the first terminal. The at least one semiconductor region is electrically connected to the second terminal. The oxide layer is located between the gate and the at least one semiconductor region.

In dynamic vision sensor (DVS) or change detection sensors, the chip or sensor is configured to control or modulate the event rate. For example, this control can be used to keep the event rate close to a desired rate or within desired bounds. Adapting the configuration of the sensor to the scene by changing the ON-event and/or the OFF-event thresholds, allows having necessary amount of data, but not much more than necessary, such that the overall system gets as much information about its state as possible.

An imaging device including: a photoelectric converter including first and second electrodes and a photoelectric conversion layer therebetween; a voltage supplier; an output circuit for outputting a signal corresponding to the potential of the second electrode; and a detector for detecting the signal level. The change rate of the conversion efficiency of the photoelectric converter with respect to a bias voltage applied between the electrodes when the bias voltage is in a first range is greater than that when the bias voltage is in a second range higher than the first range. The voltage supplier, when the detected level is a first threshold or higher, causes the potential difference between the electrodes to be a first difference, and, when the detected level is lower than a second threshold that is the first threshold or lower, causes the potential difference to be a second difference greater than the first difference.

A pixel includes a photodiode and a readout node for receiving charge transferred from the photodiode. The readout node is configured to have a variable capacitance that is non-linear with respect to a voltage at the readout node. The readout node is resettable. The readout node may be configured to have a lower capacitance when reset to a reset voltage than when getting filled with charge from the photodiode. The readout node may be configured such that the capacitance of the readout node continuously increases as additional charge is received by the readout node after the readout node is reset. The readout node may be configured such that the capacitance of the readout node jumps from a first capacitance to a second capacitance after the readout node has been filled with a certain amount of charge. An image sensor includes a pixel array with a plurality of the pixels.

A camera system including a photoelectric convertor including a first and second electrode, and a photoelectric conversion layer; and a correction circuit correcting a signal corresponding to a potential change of the second electrode. The photoelectric convertor has a photoelectric conversion characteristic in which rate of change of the photoelectric conversion efficiency with respect to a first bias voltage between the first electrode and the second electrode when the first bias voltage is in a first voltage range, is greater than the rate of change with respect to a second bias voltage when the second bias voltage is in a second voltage range that is higher than the first voltage range, and a bias voltage between the first electrode and the second electrode exists in the first voltage range, and the correction circuit corrects the signal so that variation of an output regarding an amount of incident light becomes linear.

A dynamic vision sensor (DVS) or change detection sensor reacts to changes in light intensity and in this way monitors how a scene changes. This disclosure covers both single pixel and array architectures. The DVS may contain one pixel or 2-dimensional or 1-dimensional array of pixels. The change of intensities registered by pixels are compared, and pixel addresses where the change is positive or negative are recorded and processed. Analyzing frames based on just three values for pixels, increase, decrease or unchanged, the proposed DVS can process visual information much faster than traditional computer vision systems, which correlate multi-bit color or gray level pixel values between successive frames.

Provided is a solid-state imaging apparatus and an electronic device, in which a scale of circuits, to perform arithmetic operation of the neural network, is suppressed. A solid-state imaging apparatus according to an aspect of the present disclosure includes a pixel array unit and a processing unit. The pixel array unit has a plurality of first pixels that generate electric signals, which have a logarithmic characteristic with respect to light quantity, as first pixel signals. The processing unit performs arithmetic processing of the first neural network based on a plurality of first input data, which are based on the plurality of first pixel signals read from the pixel array unit, and a plurality of logarithmic weighting factors which express strength of the connection between the plurality of first nodes by a logarithm.

An image sensor may include an array of imaging pixels arranged in rows and columns. A method of operating an imaging pixel is provided that includes accumulating charge in a photosensitive element, allowing the accumulated charge in the photodiode to overflow into a capacitor that is coupled to a reset transistor having a gate terminal configured to receive a reset control signal during an integration phase, and extending the dynamic range of the imaging pixel by dynamically adjusting the reset control signal from a first voltage level to a second voltage level during the integration phase. The reset control signal can be lowered from the first voltage level to the second voltage level in a discrete or continuous fashion such that a portion of the overflow charge in the capacitor represents a linear signal and a portion of the overflow charge in the capacitor represents a non-linear signal.

An image sensor may include an array of imaging pixels arranged in rows and columns. A method of operating an imaging pixel is provided that includes accumulating charge in a photosensitive element, allowing the accumulated charge in the photodiode to overflow into a capacitor that is coupled to a reset transistor having a gate terminal configured to receive a reset control signal during an integration phase, and extending the dynamic range of the imaging pixel by dynamically adjusting the reset control signal from a first voltage level to a second voltage level during the integration phase. The reset control signal can be lowered from the first voltage level to the second voltage level in a discrete or continuous fashion such that a portion of the overflow charge in the capacitor represents a linear signal and a portion of the overflow charge in the capacitor represents a non-linear signal.