An imaging device includes a plurality of arranged imaging elements each including: a light-receiving element configured to generate charge from received light by photoelectric conversion, a floating diffusion configured to convert the charge generated by the light-receiving element into voltage, a charge transfer switch configured to transfer the charge from the light-receiving element to the floating diffusion, a reset switch configured to reset the voltage of the floating diffusion, and a source follower configured to amplify the voltage of the floating diffusion. The reset switch is configured to reset the voltage of the floating diffusion a plurality of times for each of predetermined pixel groups in a single image data acquisition period. The charge transfer switch is configured to transfer the charge from the light-receiving element to the floating diffusion a plurality of times for each of the pixel groups in the single image data acquisition period.

A solid-state imaging device includes a plurality of pixels in a two-dimensional array. Each pixel includes a photoelectric conversion element that converts incident light into electric charge, and a charge holding element that receives the electric charge from the photoelectric conversion element, and transfers the electric charge to a corresponding floating diffusion. The charge holding element further includes a plurality of electrodes.

An image processing device includes a image processor that reads out image data which is captured by an imaging element and transferred to a memory and on which optical noise is superimposed, as region image data for each of a plurality of divided regions of the memory, and that reads out data of a predetermined region again after reading for each region image data is finished, and an display processor that outputs corrected image data obtained by correcting captured image data for each of the plurality of regions in accordance with optical noise decided in accordance with the data read out again by the image processor, the captured image data being captured by the imaging element and stored in the memory.

A radiation therapy system is configured with fast readout of X-ray images with significantly reduced image lag. A reset phase is included in the process of acquiring an X-ray image to reduce image lag in a subsequently acquired X-ray image. During the reset phase, residual charge is concurrently transferred from multiple arrays of pixel detector elements in an X-ray detector panel. As a result, image lag present in a subsequent X-ray image is minimized or otherwise reduced.

Some image sensors include pixels with capacitors. The capacitor may be used to store charge in the imaging pixel before readout. The capacitor may be a metal-insulator-metal (MIM) capacitor that is susceptible to dielectric relaxation. Dielectric relaxation may cause lag in the signal on the capacitor that impacts the signal on the capacitor during sampling. The image sensor may include dielectric relaxation correction circuitry that leverages the linear relationship between voltage stress and lag signal to correct for dielectric relaxation. The image sensor may include shielded pixels that operate with a similar timing scheme as the imaging pixels in the active array. Measured lag signals from the shielded pixels may be used to correct imaging data.

A moving image processing apparatus is configured to extract position information of a saturation region from a first frame, the saturation region including pixels each having at least a threshold pixel value that is associated with an afterimage being formed in a subsequent frame elapsed from the first frame. The moving image processing apparatus is configured to extract an afterimage region corresponding to the saturation region from the second frame, calculate motion information of the afterimage region based on motion information indicating motion between a second frame and a third frame, extract a candidate region that is matched to the afterimage region in the third frame based on the motion information, and correct the afterimage region based on the candidate region data.

A solid-state imaging device includes a plurality of pixels in a two-dimensional array. Each pixel includes a photoelectric conversion element that converts incident light into electric charge, and a charge holding element that receives the electric charge from the photoelectric conversion element, and transfers the electric charge to a corresponding floating diffusion. The charge holding element further includes a plurality of electrodes.

A solid-state imaging device includes a plurality of pixels in a two-dimensional array. Each pixel includes a photoelectric conversion element that converts incident light into electric charge, and a charge holding element that receives the electric charge from the photoelectric conversion element, and transfers the electric charge to a corresponding floating diffusion. The charge holding element further includes a plurality of electrodes.

A photoelectric conversion device includes a first photoelectric conversion element, a second photoelectric conversion element, a microlens that guides incident light to the first photoelectric conversion element and the second photoelectric conversion element, a floating diffusion to which charges accumulated in at least one of the first photoelectric conversion element and the second photoelectric conversion element are transferred, and a transistor that, when switched on, adds a capacitance to a node of the floating diffusion. First and second reading operations are performed. In the first reading operation, a signal based on charges transferred to the floating diffusion is read at a first conversion gain caused by a state where the transistor is in an off-state. In the second reading operation, a signal based on charges transferred to the floating diffusion is read at a second conversion gain caused by a state where the transistor is in an on-state.

A photoelectric conversion device includes a first photoelectric conversion element, a second photoelectric conversion element, a microlens that guides incident light to the first photoelectric conversion element and the second photoelectric conversion element, a floating diffusion to which charges accumulated in at least one of the first photoelectric conversion element and the second photoelectric conversion element are transferred, and a transistor that, when switched on, adds a capacitance to a node of the floating diffusion. First and second reading operations are performed. In the first reading operation, a signal based on charges transferred to the floating diffusion is read at a first conversion gain caused by a state where the transistor is in an off-state. In the second reading operation, a signal based on charges transferred to the floating diffusion is read at a second conversion gain caused by a state where the transistor is in an on-state.